Stealthy parametric hardware Trojans in VLSI Circuits

Over the last decade, hardware Trojans have gained increasing attention in academia, industry and by government agencies. In order to design reliable countermeasures, it is crucial to understand how hardware Trojans can be built in practice. This is an area that has received relatively scant treatment in the literature. In this thesis, we examine how particularly stealthy parametric Trojans can be introduced to VLSI circuits. Parametric Trojans do not require any additional logic and are purely based on subtle manipulations on the sub-transistor level to modify the parameters of few transistors which makes them very hard to detect. We introduce a design methodology to insert stealthy parametric hardware Trojans which are based on injecting extremely rare path delay faults into the netlist of the target circuit. As a case study, we apply our method to a 32-bit multiplier circuit resulting in a stealthy Trojan multiplier that computes faulty outputs for specific combinations of input pairs that are applied to the circuit. The multiplier can be used to realize bug attacks, introduced by Biham et al. in 2008. We also extend this concept and show how it can be used to attack ECDH key agreement protocols. Our method is a versatile tool for designing stealthy Trojans for a given circuit and is not restricted to multipliers and the bug attack. In this thesis we also examine how a stealthy side-channel hardware Trojan can be inserted in a provably-secure side-channel analysis protected implementation. Once the Trojan is triggered, the malicious design exhibits exploitable side-channel leakage leading to successful key recovery attacks. The underlying concept is based on a secure masked hardware implementation which does not exhibit any detectable leakage. However, by running the device at a particular clock frequency one of the requirements of the underlying masking scheme is not fulfilled anymore, and the device\u27s side-channel leakage can be exploited. We apply our technique to a Threshold Implementation of the PRESENT block cipher realized in both FPGA and ASIC. We show that triggering the Trojan makes both FPGA and ASIC prototypes vulnerable to certain SCA attacks. True random number generators (TRNGs) are an essential component of cryptographic designs, which are used to generate private keys for encryption and authentication, and are used in masking countermeasures. This thesis also presents a mechanism to design a stealthy parametric hardware Trojan for ring oscillator-based TRNGs. When the Trojan is triggered by operation at a specific high temperature the malicious TRNG generates predictable non-random outputs, yet under normal operating conditions it works correctly. Also we elaborate a stochastic model based on Markov Chains by which the attacker can use their knowledge of the Trojan to predict the TRNG outputs

Characterization and mitigation of process variation in digital circuits and systems

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 155-166).Process variation threatens to negate a whole generation of scaling in advanced process technologies due to performance and power spreads of greater than 30-50%. Mitigating this impact requires a thorough understanding of the variation sources, magnitudes and spatial components at the device, circuit and architectural levels. This thesis explores the impacts of variation at each of these levels and evaluates techniques to alleviate them in the context of digital circuits and systems. At the device level, we propose isolation and measurement of variation in the intrinsic threshold voltage of a MOSFET using sub-threshold leakage currents. Analysis of the measured data, from a test-chip implemented on a 0. 18[mu]m CMOS process, indicates that variation in MOSFET threshold voltage is a truly random process dependent only on device dimensions. Further decomposition of the observed variation reveals no systematic within-die variation components nor any spatial correlation. A second test-chip capable of characterizing spatial variation in digital circuits is developed and implemented in a 90nm triple-well CMOS process. Measured variation results show that the within-die component of variation is small at high voltages but is an increasing fraction of the total variation as power-supply voltage decreases. Once again, the data shows no evidence of within-die spatial correlation and only weak systematic components. Evaluation of adaptive body-biasing and voltage scaling as variation mitigation techniques proves voltage scaling is more effective in performance modification with reduced impact to idle power compared to body-biasing.(cont.) Finally, the addition of power-supply voltages in a massively parallel multicore processor is explored to reduce the energy required to cope with process variation. An analytic optimization framework is developed and analyzed; using a custom simulation methodology, total energy of a hypothetical 1K-core processor based on the RAW core is reduced by 6-16% with the addition of only a single voltage. Analysis of yield versus required energy demonstrates that a combination of disabling poor-performing cores and additional power-supply voltages results in an optimal trade-off between performance and energy.by Nigel Anthony Drego.Ph.D

Research On Hardware-based Hiding Countermeasures Against Power Analysis Attacks

電気通信大学202

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications

A Holistic Solution for Reliability of 3D Parallel Systems

As device scaling slows down, emerging technologies such as 3D integration and carbon nanotube field-effect transistors are among the most promising solutions to increase device density and performance. These emerging technologies offer shorter interconnects, higher performance, and lower power. However, higher levels of operating temperatures and current densities project significantly higher failure rates. Moreover, due to the infancy of the manufacturing process, high variation, and defect densities, chip designers are not encouraged to consider these emerging technologies as a stand-alone replacement for Silicon-based transistors. The goal of this dissertation is to introduce new architectural and circuit techniques that can work around high-fault rates in the emerging 3D technologies, improving performance and reliability comparable to Silicon. We propose a new holistic approach to the reliability problem that addresses the necessary aspects of an effective solution such as detection, diagnosis, repair, and prevention synergically for a practical solution. By leveraging 3D fabric layouts, it proposes the underlying architecture to efficiently repair the system in the presence of faults. This thesis presents a fault detection scheme by re-executing instructions on idle identical units that distinguishes between transient and permanent faults while localizing it to the granularity of a pipeline stage. Furthermore, with the use of a dynamic and adaptive reconfiguration policy based on activity factors and temperature variation, we propose a framework that delivers a significant improvement in lifetime management to prevent faults due to aging. Finally, a design framework that can be used for large-scale chip production while mitigating yield and variation failures to bring up Carbon Nano Tube-based technology is presented. The proposed framework is capable of efficiently supporting high-variation technologies by providing protection against manufacturing defects at different granularities: module and pipeline-stage levels.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/168118/1/javadb_1.pd

Cross-Layer Optimization for Power-Efficient and Robust Digital Circuits and Systems

With the increasing digital services demand, performance and power-efficiency become vital requirements for digital circuits and systems. However, the enabling CMOS technology scaling has been facing significant challenges of device uncertainties, such as process, voltage, and temperature variations. To ensure system reliability, worst-case corner assumptions are usually made in each design level. However, the over-pessimistic worst-case margin leads to unnecessary power waste and performance loss as high as 2.2x. Since optimizations are traditionally confined to each specific level, those safe margins can hardly be properly exploited. To tackle the challenge, it is therefore advised in this Ph.D. thesis to perform a cross-layer optimization for digital signal processing circuits and systems, to achieve a global balance of power consumption and output quality. To conclude, the traditional over-pessimistic worst-case approach leads to huge power waste. In contrast, the adaptive voltage scaling approach saves power (25% for the CORDIC application) by providing a just-needed supply voltage. The power saving is maximized (46% for CORDIC) when a more aggressive voltage over-scaling scheme is applied. These sparsely occurred circuit errors produced by aggressive voltage over-scaling are mitigated by higher level error resilient designs. For functions like FFT and CORDIC, smart error mitigation schemes were proposed to enhance reliability (soft-errors and timing-errors, respectively). Applications like Massive MIMO systems are robust against lower level errors, thanks to the intrinsically redundant antennas. This property makes it applicable to embrace digital hardware that trades quality for power savings.Comment: 190 page

Ultra-Low Power Transmitter and Power Management for Internet-of-Things Devices

Two of the most critical components in an Internet-of-Things (IoT) sensing and transmitting node are the power management unit (PMU) and the wireless transmitter (Tx). The desire for longer intervals between battery replacements or a completely self-contained, battery-less operation via energy harvesting transducers and circuits in IoT nodes demands highly efficient integrated circuits. This dissertation addresses the challenge of designing and implementing power management and Tx circuits with ultra-low power consumption to enable such efficient operation. The first part of the dissertation focuses on the study and design of power management circuits for IoT nodes. This opening portion elaborates on two different areas of the power management field: Firstly, a low-complexity, SPICE-based model for general low dropout (LDO) regulators is demonstrated. The model aims to reduce the stress and computation times in the final stages of simulation and verification of Systems-on-Chip (SoC), including IoT nodes, that employ large numbers of LDOs. Secondly, the implementation of an efficient PMU for an energy harvesting system based on a thermoelectric generator transducer is discussed. The PMU includes a first-in-its-class LDO with programmable supply noise rejection for localized improvement in the suppression. The second part of the dissertation addresses the challenge of designing an ultra- low power wireless FSK Tx in the 900 MHz ISM band. To reduce the power consumption and boost the Tx energy efficiency, a novel delay cell exploiting current reuse is used in a ring-oscillator employed as the local oscillator generator scheme. In combination with an edge-combiner PA, the Tx showed a measured energy efficiency of 0.2 nJ/bit and a normalized energy efficiency of 3.1 nJ/(bit∙mW) when operating at output power levels up to -10 dBm and data rates of 3 Mbps. To close this dissertation, the implementation of a supply-noise tolerant BiCMOS ring-oscillator is discussed. The combination of a passive, high-pass feedforward path from the supply to critical nodes in the selected delay cell and a low cost LDO allow the oscillator to exhibit power supply noise rejection levels better than –33 dB in experimental results

Scalable Control and Measurement of Gate-Defined Quantum Dot Systems

There is currently a worldwide effort towards the realisation of large-scale quantum computers that exploit quantum phenomena for information processing. While these computing systems could potentially redefine the technological landscape, harnessing quantum effects is challenging due to their inherently fragile nature and the experimentally demanding environments in which they arise. In order for quantum computation to be viable it is first necessary to demonstrate the operation of two-level quantum systems (qubits) which have long coherence times, can be quickly read out, and can be controlled with high fidelity. Focusing on these key requirements, this thesis presents four experiments towards scalable solid state quantum computing using gate-defined quantum dot devices based on gallium arsenide (GaAs) heterostructures. The first experiment investigates a phonon emission process that limits the charge coherence in GaAs and potentially complicates the microwave control of multi-qubit devices. We show that this microwave analogy to Raman spectroscopy can provide a means of detecting the unique phonon spectral density created by a nanoscale device. Experimental results are compared to a theoretical model based on a non-Markovian master equation and approaches to suppressing electron-phonon coupling are discussed. The second experiment demonstrates a technique involving in-situ gate electrodes coupled to lumped-element resonators to provide high-bandwidth dispersive read-out of the state of a double quantum dot. We characterise the charge sensitivity of this method in the few-electron regime and benchmark its performance against quantum point contact charge sensors. The third experiment implements a low-loss, chip-level frequency multiplexing scheme for the readout of scaled-up spin qubit arrays. Dispersive gate-sensing is realised in combination with charge detection based on two radio frequency quantum point contacts to perform multiplexed readout of a double quantum dot in the few-electron regime. Demonstration of a 10-channel multiplexing device is achieved and limitations in scaling spin qubit readout to large numbers using multiplexed channels discussed. The final experiment ties previously presented results together by realising a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm. The basic principles of this architecture are demonstrated via the manipulation of a semiconductor qubit using control pulses that are cryogenically routed using a high-electron mobility transistor switching matrix controlled by a field programmable gate array. Finally, several technical results are also presented including the development of printed circuit board solutions to allow the high-frequency measurement of nanoscale devices at cryogenic temperatures and the design of on-chip interconnects used to suppress electromagnetic crosstalk in high-density spin qubit device architectures

The Fifth NASA Symposium on VLSI Design

The fifth annual NASA Symposium on VLSI Design had 13 sessions including Radiation Effects, Architectures, Mixed Signal, Design Techniques, Fault Testing, Synthesis, Signal Processing, and other Featured Presentations. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The presentations share insights into next generation advances that will serve as a basis for future VLSI design