Semiconductor devices in solid-state/hybrid circuit breakers: current status and future trends

Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well as hybrid circuit breakers (HCBs) with semiconductor power devices. A few novel SSCB and HCB concepts are described in this paper, including advantage and limitation discussions of wide-band-gap (WBG) devices in basic SSCB/HCB configuration by simulation and 360 V/150 A experimental verifications. Novel SSCB/HCB configurations combining ultra-fast switching and high efficiency at normal operation are proposed. Different types of power devices are installed in these circuit breakers to achieve adequate performance. Challenges and future trends of semiconductor power devices in SSCB/HCB with different voltage/power levels and special performance requirements are clarified

Study of the generator/motor operation of induction machines in a high frequency link space power system

Static power conversion systems have traditionally utilized dc current or voltage source links for converting power from one ac or dc form to another since it readily achieves the temporary energy storage required to decouple the input from the output. Such links, however, result in bulky dc capacitors and/or inductors and lead to relatively high losses in the converters due to stresses on the semiconductor switches. The feasibility of utilizing a high frequency sinusoidal voltage link to accomplish the energy storage and decoupling function is examined. In particular, a type of resonant six pulse bridge interface converter is proposed which utilizes zero voltage switching principles to minimize switching losses and uses an easy to implement technique for pulse density modulation to control the amplitude, frequency, and the waveshape of the synthesized low frequency voltage or current. Adaptation of the proposed topology for power conversion to single-phase ac and dc voltage or current outputs is shown to be straight forward. The feasibility of the proposed power circuit and control technique for both active and passive loads are verified by means of simulation and experiment

Resonance mode power supplies with power factor correction

There is an increasing need for AC-DC converters to draw a pure sinusoidal current at near unity power factor from the AC mains. Most conventional power factor correcting systems employ PWM techniques to overcome the poor power factor being presented to the mains. However, the need for smaller and lighter power processing equipment has motivated the use of higher internal conversion frequencies in the past. In this context, resonant converters are becoming a viable alternative to the conventional PWM controlled power supplies. The thesis presents the implementation of active power factor correction in power supplies, using resonance mode techniques. It reviews the PWM power factor correction circuit topologies previously used. The possibility of converting these PWM topologies to resonant mode versions is discussed with a critical assessment as to the suitability of the semiconductor switching devices available today for deployment in these resonant mode supplies. The thesis also provides an overview of the methods used to model active semiconductor devices. The computer modelling is done using the PSpice microcomputer simulation program. The modifications that are needed to the built in MOSFET model in PSpice, when modeling high frequency circuits is discussed. A new two transistor model which replicates the action of a OTO thyristor is also presented. The new model enables the designer to estimate the device parameters with ease by adopting a short calculation and graphical design procedure, based on the manufacturer's data sheets. The need for a converter with a high efficiency, larger power/weight ratio, high input power factor with reduced line current distortion and reduced cost has led to the development of a new resonant mode converter topology, for power processing. The converter presents a near resistive load to the mains thus ensuring a high input power factor, while providing a stabilised de voltage at the output with a small lOOHz ripple. The supply is therefore ideal for preregulation applications. A description of the modes of operation and the analysis of the power circuit are included in the thesis. The possibility of using the converter for low output voltage applications is also discussed. The design of a 300W, 80kHz prototype model of this circuit is presented in the thesis. The design of the isolation transformer and other magnetic components are described in detail. The selection of circuit components and the design and implementation of the variable frequency control loop are also discussed. An evaluation of the experimental and computer simulated results obtained from the prototype model are included in the presentation. The thesis further presents a zero-current switching quasi-resonant flyback circuit topology with power factor correction. The reasons for using this topology for off-line power conversion applications are discussed. The use of a cascoded combination of a bipolar power transistor and two power MOSFETs i~ the configuration has enabled the circuit to process moderate levels of power while simultaneously switching at high frequencies. This fulfils the fundamental precondition for miniaturisation. It also provides a well regulated DC output voltage with a very small ripple while maintaining a high input power factor. The circuit is therefore ideal for use in mobile applications. A preliminary design of the above circuit, its analysis using PSpice, the design of the control circuit, current limiting and overcurrent protection circuitry and the implementation of closed-loop control are all included in the thesis. The experimental results obtained from a bread board model is also presented with an evaluation of the circuit performance. The power factor correction circuit is finally installed in this supply and the overall converter performance is assessed

Series connection of power semiconductors for medium voltage applications

The series connection of power semiconductor devices allows the operation at voltage levels higher than the levels allowed by one single semiconductor. However, due to individual parameter differences of the series connected devices it is difficult to ensure a proper voltage balance between the series connected power devices and if any semiconductor exceeds its maximum blocking voltage it will fail. Because of its gate controllability and its low gate energy requirements, the IGBT is the preferred choice when high number of switching devices must be connected in series. In this research work an IGBT gate driver has been developed which will control the behaviour of the IGBT during the switching process. In consequence, this gate driver should ensure a proper voltage balance between the series connected IGBT devices. Basically, this PhD research work deals with the analysis and the modelling of the behaviour of the IGBT / Diode, proposes an active gate control and shows its validity for the series connection of IGBT / Diode devices. Finally, voltage source converter topologies are briefly compared for reactive power compensation applications at Medium Voltage utility grids. The required blocking voltage capacity is achieved by means of the series connection of power semiconductor devices.La conexión en serie de semiconductores de potencia permite trabajar a tensiones de trabajo superiores a las que podría soportar un único semiconductor. Sin embargo, debido a diferencias en las características de los propios semiconductores es difícil garantizar el equilibrado adecuado de las tensiones de trabajo entre los distintos semiconductores conectados en serie. Si algún semiconductor supera su máxima tensión de trabajo este fallará. Debido a su controlabilidad y bajo requerimiento energético por puerta el IGBT es la opción preferida cuando se requiere la conexión en serie de gran cantidad de semiconductores. En este trabajo de investigación se ha desarrollado un driver para IGBT que permita el control del proceso de conmutación del IGBT y garantice el equilibrado de las tensiones entre los IGBTs conectados en serie. Básicamente, en este trabajo de investigación se presenta el análisis y modelado del comportamiento del IGBT/Diodo, el control activo empleado para controlar el proceso de conmutación del IGBT y su validez para la conextión en serie. Finalmente, se presenta una pequeña comparación de convertidores de fuente de tensión para aplicaciones de compensación de energía reactiva conectados directamente a redes de Media Tensión. La capacidad de bloqueo requerida se obtiene mediante la conexión en serie de semiconductores de potencia.Potentzi erdi eroaleen serie elkarketak, erdi eroale batek jasan dezakeena baino tentsio maila altuagoan lan egitea ahalbideratzen du. Hala ere, erdi eroaleen arteko ezaugarri ezberditasunak direla eta, zaila egiten da tentsio banaketa egokia zihurtatzea. Erdi eroaleetariko batek bere gehienezko tentsio maila gainditzen badu honek huts egingo du. Erdi eroale asko seriean elkartu behar direnean IGBT-a izaten da aukerarik hobetsiena bere kontrolagarritasuna eta behar duen ateko energia maila baxua dela eta. Ikerketa lan honetan IGBT baten ateko “driver”-a garatu da. Honek IGBT-aren konmutazio prozesua kontrolatu behar du eta aldi berean, seriean elkarturiko IGBT-en artean, tentsio banaketa egokia lortu. Funtsean, ikerketa lan honetan IGBT eta Diodo-aren analisia eta modelatua erakusten dira. Modu berean “driver”-ean erabilitako kontrola eta bere baliozkotasuna IGBT/Diodo-en serie elkarketarako erakusten dira. Azkenik, Tentsio Ertaineko sarera zuzenean konektaturiko Tentsio Iturri Bihurgailuen arteko konparaketa bat egin da. Sareko tentsio maila altua dela eta erdi eroaleen serie elkarketa derrigorrezkoa da

Study of switching transients in high frequency converters

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated

Silicon carbide power devices

Abstract unavailable please refer to PD

System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the addition of extra energy storage elements to the HF link are described. The importance of the source voltage level to achieve a better current regulation for the source side PDMC is also briefly discussed. The power levels achieved in the motoring mode of operation show that the proposed power levels achieved in the generating mode of operation can also be easily achieved provided that no mechanical speed limitation were present to drive the induction machine at the proposed power level

A Silicon Carbide Based Solid-State Fault Current Limiter for Modern Power Distribution Systems

The fault current limiter represents a developing technology which will greatly improve the reliability and stability of the power grid. By reducing the magnitude of fault currents in distribution systems, fault current limiters can alleviate much of the damage imposed by these events. Solid-state fault current limiters in particular offer many improved capabilities in comparison to the power system protection equipment which is currently being used for fault current mitigation. The use of silicon carbide power semiconductor devices in solid-state fault current limiters produces a system that would help to advance the infrastructure of the electric grid. A solid-state fault current limiter utilizing silicon carbide super gate-turn off thyristors (SGTOs) and silicon carbide PiN diodes was designed, built, and tested as a technology demonstrator. The impact of using silicon carbide (SiC) devices in this application was assessed, as well as the associated design challenges. The feasibility of implementing SiC based solid-state fault current limiters for 15 kV class distribution systems was investigated in order to determine the practicality of wide-scale deployment