An Empirical Study Comparing Unobtrusive Physiological Sensors for Stress Detection in Computer Work.

Several unobtrusive sensors have been tested in studies to capture physiological reactions to stress in workplace settings. Lab studies tend to focus on assessing sensors during a specific computer task, while in situ studies tend to offer a generalized view of sensors' efficacy for workplace stress monitoring, without discriminating different tasks. Given the variation in workplace computer activities, this study investigates the efficacy of unobtrusive sensors for stress measurement across a variety of tasks. We present a comparison of five physiological measurements obtained in a lab experiment, where participants completed six different computer tasks, while we measured their stress levels using a chest-band (ECG, respiration), a wristband (PPG and EDA), and an emerging thermal imaging method (perinasal perspiration). We found that thermal imaging can detect increased stress for most participants across all tasks, while wrist and chest sensors were less generalizable across tasks and participants. We summarize the costs and benefits of each sensor stream, and show how some computer use scenarios present usability and reliability challenges for stress monitoring with certain physiological sensors. We provide recommendations for researchers and system builders for measuring stress with physiological sensors during workplace computer use

Earth Resources Laboratory research and technology

The accomplishments of the Earth Resources Laboratory's research and technology program are reported. Sensors and data systems, the AGRISTARS project, applied research and data analysis, joint research projects, test and evaluation studies, and space station support activities are addressed

Nonlinear mechanisms in passive microwave devices

Premi extraordinari doctorat curs 2010-2011, àmbit d’Enginyeria de les TICThe telecommunications industry follows a tendency towards smaller devices, higher power and higher frequency, which imply an increase on the complexity of the electronics involved. Moreover, there is a need for extended capabilities like frequency tunable devices, ultra-low losses or high power handling, which make use of advanced materials for these purposes. In addition, increasingly demanding communication standards and regulations push the limits of the acceptable performance degrading indicators. This is the case of nonlinearities, whose effects, like increased Adjacent Channel Power Ratio (ACPR), harmonics, or intermodulation distortion among others, are being included in the performance requirements, as maximum tolerable levels. In this context, proper modeling of the devices at the design stage is of crucial importance in predicting not only the device performance but also the global system indicators and to make sure that the requirements are fulfilled. In accordance with that, this work proposes the necessary steps for circuit models implementation of different passive microwave devices, from the linear and nonlinear measurements to the simulations to validate them. Bulk acoustic wave resonators and transmission lines made of high temperature superconductors, ferroelectrics or regular metals and dielectrics are the subject of this work. Both phenomenological and physical approaches are considered and circuit models are proposed and compared with measurements. The nonlinear observables, being harmonics, intermodulation distortion, and saturation or detuning, are properly related to the material properties that originate them. The obtained models can be used in circuit simulators to predict the performance of these microwave devices under complex modulated signals, or even be used to predict their performance when integrated into more complex systems. A key step to achieve this goal is an accurate characterization of materials and devices, which is faced by making use of advanced measurement techniques. Therefore, considerations on special measurement setups are being made along this thesis.Award-winningPostprint (published version

Modeling friction: From nanoscale to mesoscale

The physics of sliding friction is gaining impulse from nanoscale and mesoscale experiments, simulations, and theoretical modeling. This Colloquium reviews some recent developments in modeling and in atomistic simulation of friction, covering open-ended directions, unconventional nanofrictional systems, and unsolved problems.Comment: 26 pages, 14 figures, Rev. Mod. Phys. Colloquiu

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.Fil: Jiang, Lanlan. Soochow University; ChinaFil: Shi, Yuanyuan. Soochow University; China. University of Stanford; Estados UnidosFil: Hui, Fei. Soochow University; China. Massachusetts Institute of Technology; Estados UnidosFil: Tang, Kechao. University of Stanford; Estados UnidosFil: Wu, Qian. Soochow University; ChinaFil: Pan, Chengbin. Soochow University; ChinaFil: Jing, Xu. Soochow University; China. University of Texas at Austin; Estados UnidosFil: Uppal, Hasan. University of Manchester; Reino UnidoFil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Lu, Guangyuan. Chinese Academy of Sciences; República de ChinaFil: Wu, Tianru. Chinese Academy of Sciences; República de ChinaFil: Wang, Haomin. Chinese Academy of Sciences; República de ChinaFil: Villena, Marco A.. Soochow University; ChinaFil: Xie, Xiaoming. Chinese Academy of Sciences; República de China. ShanghaiTech University; ChinaFil: McIntyre, Paul C.. University of Stanford; Estados UnidosFil: Lanza, Mario. Soochow University; Chin