Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) characteristics under 60Co gamma radiation of two different commercial power GaN HEMT structures. Different bias conditions were applied to both structures during irradiation and some static measurements, such as threshold voltage and leakage currents, were performed. Additionally, dynamic resistance was measured to obtain practical information about device trapping under radiation during switching mode, and how trapping in the device is affected by gamma radiation. The experimental results showed a high dependence on the HEMT structure and the bias condition applied during irradiation. Specifically, a free current collapse structure showed great stability until 3.7 Mrad(Si), unlike the other structure tested, which showed high degradation of the parameters measured. The changes were demonstrated to be due to trapping effects generated or enhanced by gamma radiation. These new results obtained about RON_dyn will help elucidate trap behaviors in switching transistors

Technology and reliability of normally-off GaN HEMTs with p-type gate

open4siopenMeneghini, Matteo*; Hilt, Oliver; Wuerfl, Joachim; Meneghesso, GaudenzioMeneghini, Matteo; Hilt, Oliver; Wuerfl, Joachim; Meneghesso, Gaudenzi

Technology and reliability of normally-off GaN HEMTs with p-type gate

GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues

GaN Power Devices: Discerning Application-Specific Challenges and Limitations in HEMTs

GaN power devices are typically used in the 600 V market, for high efficiency, high power-density systems. For these devices, the lateral optimization of gate-to-drain, gate, and gate-to-source lengths, as well as gate field-plate length are critical for optimizing breakdown voltage and performance. This work presents a systematic study of lateral scaling optimization for high voltage devices to minimize figure of merit and maximize breakdown voltage. In addition, this optimization is extended for low voltage devices ( \u3c 100 V), presenting results to optimize both lateral features and vertical features. For low voltage design, simulation work suggests that breakdown is more reliant on punch-through as the primary breakdown mechanism rather than on vertical leakage current as is the case with high-voltage devices. A fabrication process flow has been developed for fabricating Schottky-gate, and MIS-HEMT structures at UCF in the CREOL cleanroom. The fabricated devices were designed to validate the simulation work for low voltage GaN devices. The UCF fabrication process is done with a four layer mask, and consists of mesa isolation, ohmic recess etch, an optional gate insulator layer, ohmic metallization, and gate metallization. Following this work, the fabrication process was transferred to the National Nano Device Laboratories (NDL) in Hsinchu, Taiwan, to take advantage of the more advanced facilities there. Following fabrication, a study has been performed on defect induced performance degradation, leading to the observation of a new phenomenon: trap induced negative differential conductance (NDC). Typically NDC is caused by self-heating, however by implementing a substrate bias test in conjunction with pulsed I-V testing, the NDC seen in our fabricated devices has been confirmed to be from buffer traps that are a result of poor channel carrier confinement during the dc operating condition

O impacto dos efeitos da memória de longo termo na linearizabilidade de amplificadores de potência baseados em AlGaN/GaN HEMT

AlGaN/GaN High Electron Mobility Transistor (HEMT)s are among the preferred options for radio-frequency power amplification in cellular base station transmitters and radar applications. However, despite their promising outlook, the pervasiveness of trapping effects makes them resilient to conventional digital predistortion schemes, which not only decrease their current range of applications but could also preclude their integration in future small cells and multiple-input multiple-output architectures where simpler predistortion schemes are mandatory. So, this PhD thesis aims at developing a meaningful link between the device physics and the linearizability of the AlGaN/GaN HEMT-based Power Amplifier (PA). In order to bridge this gap, this thesis begins with a clear explanation for the mechanisms governing the dominant source of trapping effects in standard AlGaN/GaN HEMTs, namely buffer traps. Based on this knowledge, we explain why the best known physically-supported trapping models, used to represent these devices, are insufficient and present a possible improvement to what we consider to be the most accurate model, supported by Technology Computer-Aided Design (TCAD) simulations. This has also been corroborated through a novel double-pulse technique able to describe experimentally both the capture and emission transients in a wide temporal span under guaranteed isothermal conditions. The measured stretched capture transients validated our understanding of the process while the temperature dependence of the emission profiles confirmed buffer traps as the dominant source of trapping effects. Finally, through both simulations and experimental results, we elaborate here the relationship between the emission time constant and the achievable linearity of GaN HEMT-based PAs, showing that the worst-case scenario happens when the emission time constant is on the order of the time between consecutive envelope peaks above a certain amplitude threshold. This is the case in which we observed a more pronounced hysteresis on the gain and phase-shift characteristics, and so, a stronger impact of the memory effects. The main outcome of this thesis suggests that the biggest linearizability concern in standard AlGaN/GaN HEMT-based PAs lies on the large emission time constants of buffer traps.AlGaN/GaN HEMTs estão entre as opções preferidas para amplificação de potência de radiofrequência em transmissores de estacão base celular e aplicações de radar. No entanto, apesar de sua perspetiva promissora, a influência dos efeitos de defeitos com níveis profundos torna-os imunes aos esquemas convencionais de pre-distorção digital. Assim, esta tese de doutoramento visa desenvolver uma ligação significativa entre a física do dispositivo e a linearização de amplificadores de potência baseados em Al- GaN/GaN HEMTs. Por forma a preencher esta lacuna, esta tese começa com uma explicação clara dos mecanismos que governam a fonte dominante de efeitos de defeitos com níveis profundos em AlGaN/GaN HEMTs standard, especificamente defeitos no buffer. Com base neste conhecimento, são aparentadas as falhas dos modelos físicos mais conhecidos de defeitos de nível profundo usados para representar estes dispositivos, assim como uma possível melhoria suportada em simulações de TCAD. Isto é também corroborado por uma nova técnica de duplo-pulso capaz de descrever experimentalmente os transientes de captura e emissão num amplo intervalo temporal sob condições isotérmicas. Os transientes de captura medidos validam a nossa compreensão do processo, enquanto que a dependência da temperatura nos perfis de emissão confirmou os defeitos no buffer como a fonte dominante de efeitos de defeitos com níveis profundos. Por fim, através de simulações e resultados experimentais, elabora-se aqui a relação entre a constante de tempo de emissão e a linearizabilidade dos amplificadores baseados em AlGaN/GaN HEMT, mostrando que o pior cenário acontece quando a constante de tempo de emissão é da mesma ordem do tempo entre picos consecutivos da envolvente acima de um certo limiar de amplitude. Este é o caso para o qual se observa uma histerese mais pronunciada nas características de ganho e fase e, consequentemente, um impacto mais forte dos efeitos de memória. O resultado principal desta tese sugere que a maior preocupação na linearização de amplificadores baseados em AlGaN/GaN HEMTs standard está nas grandes constantes de tempo de emissão dos defeitos no buffer.Programa Doutoral em Engenharia Eletrotécnic

OFF-State Reliability of pGaN Power HEMTs

The concern for climate changes and the increase in the electricity demand turned the attention towards the production, sorting and use of electric energy through zero emission (CO2) and highly efficient solutions (e.g. for electric vehicle), respectively. As a consequence, the need for high performance, reliable and low cost power transistors adopted for power applications is increasing as well. Gallium nitride seems to be the most promising candidate for the next generation of devices for power electronics, thanks to its excellent properties and comparable cost with respect to Si counterpart. The main and most adopted GaN-based device is the high electron mobility transistor (HEMT). In particular, in the case of switching power applications, HEMTs repeatedly are switched between high current on-state and high voltage off-state operation. For both operation modes a good reliability must be guaranteed. This thesis is focused on the reliability issues related to the off-state operation. The results have been obtained during a six months research period at imec (Belgium) on 200V p-GaN gate AlGaN/GaN HEMTS. Different devices have been investigated, differing for gate-to-drain distance, field plates lengths, AlGaN and GaN layers properties. Time-dependent dielectric breakdown and hard breakdown tests have been performed in combination with TCAD simulations. It has been demonstrated that the gate-to-drain distance (LGD) impacts the breakdown voltage and the kind of failure mechanism. If LGD ≤3um the breakdown occurs through the GaN channel layer due to short channel effects. In this case, by reducing the thickness of the GaN channel layer such behaviour can be attenuated, eventually leading to longer time-to-failure. If LGD≥ 4um the breakdown occurs between the 2DEG and the source field plates, where the properties of the AlGaN barrier layer (i.e. thickness and Al concentration) and the field plates configuration play the main role on the time-to-failure

Impact of Gamma-Irradiation on the Characteristics of III-N/GaN Based High Electron Mobility Transistors

In this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices\u27 transport and optical properties were analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a significant role in development and design of radiation resistant semiconductor components for different applications. Electrical testing combined with temperature dependent Electron Beam Induced Current (EBIC) that we used in our investigations, provided critical information on defects induced in the material because of gamma-irradiation. It was shown that low dose (below ~250 Gy) and high doses (above ~250 Gy) of gamma-irradiation affects the AlGaN/GaN HEMTs due to different mechanisms. For low doses of gamma-irradiation, the improvement in minority carrier diffusion length is likely associated with the irradiation-induced growing lifetime of the non-equilibrium carriers. However, with the increased dose of irradiation (above ~ 250 Gy), the concentration of point defects, such as nitrogen vacancies, as well as the complexes involving native defects increases which results in the non-equilibrium carrier scattering. The impact of defect scattering is more pronounced at higher radiation, which leads to the degradation in the mobility and therefore the diffusion length. In addition for each device under investigation, the temperature dependent minority carrier diffusion length measurements were carried out. These measurements allowed the extraction of the activation energy for the temperature-induced enhancement of the minority carrier transport, which (activation energy) bears a signature of defect levels involved the carrier recombination process. Comparing the activation energy before and after gamma-irradiation identified the radiation-induced defect levels and their dependences. To complement EBIC measurements, spatially resolved Cathodoluminescence (CL) measurements were carried out at variable temperatures. Similar to the EBIC measurements, CL probing before and after the gamma-irradiation allowed the identification of possible defect levels generated as a result of gamma-bombardment. The observed decrease in the CL peak intensity after gamma-irradiation provides the direct evidence of the decrease in the number of recombination events. Based on the findings, the decay in the near-band-edge intensity after low-dose of gamma-irradiation (below ~250 Gy) was explained as a consequence of increased non-equilibrium carrier lifetime. For high doses (above ~250 Gy), decay in the CL intensity was observed to be related to the reduction in the mobility of charge carriers. The results of EBIC are correlated with the CL measurements in order to demonstrate that same underlying process is responsible for the changes induced by the gamma-irradiation. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate and drain characteristics. Exposure of AlGaN/GaN HEMTs to high dose of 60Co gamma-irradiation (above ~ 250 Gy) resulted in significant device degradation. Gamma-rays doses up to 1000 Gy are shown to result in positive shift in threshold voltage, a reduction in the drain current and transconductance due to increased trapping of carriers and dispersion of charge. In addition, a significant increase in the gate leakage current was observed in both forward and reverse directions after irradiation. Post-irradiation annealing at relatively low temperature was shown to restore the minority carrier transport as well as the electrical characteristics of the devices. The level of recovery of gamma-irradiated devices after annealing treatment depends on the dose of the irradiation. The devices that show most recovery for a particular annealing temperature are those exposed to the low doses of gamma-irradiation, while those exposed to the highest doses results in no recovery of performance. The latter fact indicates that a higher device annealing temperature is needed for larger doses of gamma-irradiation