2 research outputs found

    Physical Aspects of VLSI Design with a Focus on Three-Dimensional Integrated Circuit Applications

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    This work is on three-dimensional integration (3DI), and physical problems and aspects of VLSI design. Miniaturization and highly complex integrated systems in microelectronics have led to the 3DI development as a promising technological approach. 3DI offers numerous advantages: Size, power consumption, hybrid integration etc., with more thermal problems and physical complexity as trade-offs. We open this work by presenting the design and testing of an example 3DI system, to our knowledge the first self-powering system in a three-dimensional SOI technology. The system uses ambient optical energy harvested by a photodiode array and stored in an integrated capacitor. An on-chip metal interconnect network, beyond its designed role, behaves as a parasitic load vulnerable to electromagnetic coupling. We have developed a spatially-dependent, transient Green's Function based method of calculating the response of an interconnect network to noise. This efficient method can model network delays and noise sensitivity, which are involved problems in both planar and especially in 3DICs. Three-dimensional systems are more susceptible to thermal problems, which also affect VLSI with high power densities, of complex systems and under extreme temperatures. We analytically and experimentally investigate thermal effects in ICs. We study the effects of non-uniform, non-isotropic thermal conductivity of the typically complex IC material system, with a simulator we developed including this complexity. Through our simulations, verified by experiments, we propose a method of cooling or directionally heating IC regions. 3DICs are suited for developing wireless sensor networks, commonly referred to as ``smart dust.'' The ideal smart dust node includes RF communication circuits with on-chip passive components. We present an experimental study of on-chip inductors and transformers as integrated passives. We also demonstrate the performance improvement in 3DI with its lower capacitive loads. 3DI technology is just one example of the intense development in today's electronics, which maintains the need for educational methods to assist student recruitment into technology, to prepare students for a demanding technological landscape, and to raise societal awareness of technology. We conclude this work by presenting three electrical engineering curricula we designed and implemented, targeting these needs among others

    Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts

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    The 3D integration is the most promising technological solution to track the level of integration dictated by Moore's Law (see more than Moore, Moore versus more). It leads to important research for a dozen years. It can superimpose different circuits and components in one box. Its main advantage is to allow a combination of heterogeneous and highly specialized technologies for the establishment of a complete system, while maintaining a high level of performance with very short connections between the different circuits. The objective of this work is to provide consistent modeling via crossing, and / or contacts in the substrate, with various degrees of finesse / precision to allow the high-level designer to manage and especially to optimize the partitioning between the different strata. This modelization involves the development of multiple views at different levels of abstraction: the physical model to "high level" model. This would allow to address various issues faced in the design process: - The physical model using an electromagnetic simulation based on 2D or 3D ( finite element solver ) is used to optimize the via (materials, dimensions etc..) It determines the electrical performance of the via, including high frequency. Electromagnetic simulations also quantify the coupling between adjacent via. - The analytical compact of via their coupling model, based on a description of transmission line or Green cores is used for the simulations at the block level and Spice type simulations. Analytical models are often validated against measurements and / or physical models.L’intégration 3D est la solution technologique la plus prometteuse pour suivre le niveau d’intégration dictée par la loi de Moore (cf. more than Moore, versus more Moore). Elle entraine des travaux de recherche importants depuis une douzaine d’années. Elle permet de superposer différents circuits et composants dans un seul boitier. Son principal avantage est de permettre une association de technologies hétérogènes et très spécialisées pour la constitution d’un système complet, tout en préservant un très haut niveau de performance grâce à des connexions très courtes entre ces différents circuits. L’objectif de ce travail est de fournir des modélisations cohérentes de via traversant, ou/et de contacts dans le substrat, avec plusieurs degrés de finesse/précision, pour permettre au concepteur de haut niveau de gérer et surtout d’optimiser le partitionnement entre les différentes strates. Cette modélisation passe par le développement de plusieurs vues à différents niveaux d’abstraction: du modèle physique au modèle « haut niveau ». Elle devait permettre de répondre à différentes questions rencontrées dans le processus de conception :- le modèle physique de via basé sur une simulation électromagnétique 2D ou 3D (solveur « éléments finis ») est utilisé pour optimiser l’architecture du via (matériaux, dimensions etc.) Il permet de déterminer les performances électriques des via, notamment en haute fréquence. Les simulations électromagnétiques permettent également de quantifier le couplage entre via adjacents. - le modèle compact analytique de via et de leur couplage, basé sur une description de type ligne de transmission ou noyaux de Green, est utilisé pour les simulations au niveau bloc, ainsi que des simulations de type Spice. Les modèles analytiques sont souvent validés par rapport à des mesures et/ou des modèles physiques
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