Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

IC design for reliability

textAs the feature size of integrated circuits goes down to the nanometer scale, transient and permanent reliability issues are becoming a significant concern for circuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severity of reliability challenges and higher error rates due to transient upsets favor higher-level design for reliability (DFR). In this work, we develop several methods for DFR at the circuit level. A major source of transient errors is the single event upset (SEU). SEUs are caused by high-energy particles present in the cosmic rays or emitted by radioactive contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion region of an MOS transistor, they may generate a temporary logic fault. Depending on where the MOS transistor is located and what state the circuit is at, an SEU may result in a circuit-level error. We analyze SEUs both in combinational logic and memories (SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closedform expression. Among the many permanent failure mechanisms that include time-dependent oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and negative bias temperature instability (NBTI), NBTI has recently become important. Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is negatively biased. The voltage stress across the gate generates interface traps, which degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet timing requirement and cause functional errors. NBTI becomes severe at elevated temperatures. In this dissertation, we propose a NBTI degradation model that takes into account the temperature variation on the chip and gives the accurate estimation of the degraded threshold voltage. In order to account for the degradation of devices, traditional design methods add guard-bands to ensure that the circuit will function properly during its lifetime. However, the worst-case based guard-bands lead to significant penalty in performance. In this dissertation, we propose an effective macromodel-based reliability tracking and management framework, based on a hybrid network of on-chip sensors, consisting of temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced transistor aging. The key feature of our work, in contrast to the traditional tracking techniques that rely solely on direct measurement of the increase of threshold voltage or circuit delay, is an explicit macromodel which maps operating temperature to circuit degradation (the increase of circuit delay). The macromodel allows for costeffective tracking of reliability using temperature sensors and is also essential for enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase reliability estimation techniques. As the severity of reliability challenges continue to grow with technology scaling, it will become more important for circuit designers/CAD tools to be equipped with the developed methods.Electrical and Computer Engineerin

Efficient Aging-aware Failure Probability Estimation Using Augmented Reliability and Subset Simulation

A circuit-aging simulation that efficiently calculates temporal change of rare circuit-failure probability is proposed. While conventional methods required a long computational time due to the necessity of conducting separate calculations of failure probability at each device age, the proposed Monte Carlo based method requires to run only a single set of simulation. By applying the augmented reliability and subset simulation framework, the change of failure probability along the lifetime of the device can be evaluated through the analysis of the Monte Carlo samples. Combined with the two-step sample generation technique, the proposed method reduces the computational time to about 1/6 of that of the conventional method while maintaining a sufficient estimation accuracy

A Unified Approach for Performance Degradation Analysis from Transistor to Gate Level

In this paper, we present an extensive analysis of the performance degradation in MOSFET based circuits. The physical effects that we consider are the random dopant fluctuation (RDF), the oxide thickness fluctuation (OTF) and the Hot-carrier-Instability (HCI). The work that we propose is based on two main key points: First, the performance degradation is studied considering BULK, Silicon-On-Insulator (SOI) and Double Gate (DG) MOSFET technologies. The analysis considers technology nodes from 45nm to 11nm. For the HCI effect we consider also the time-dependent evolution of the parameters of the circuit. Second, the analysis is performed from transistor level to gate level. Models are used to evaluate the variation of transistors key parameters, and how these variation affects performance at gate level as well.The work here presented was obtained using TAMTAMS Web, an open and publicly available framework for analysis of circuits based on transistors. The use of TAMTAMS Web greatly increases the value of this work, given that the analysis can be easily extended and improved in both complexity and depth

Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

Online Nbti Wear-out Estimation

CMOS feature size scaling has been a source of dramatic performance gains, but it has come at a cost of on-chip wear-out. Negative Bias Temperature Instability (NBTI) is one of the main on-chip wear-out problems which questions the reliability of a chip. To check the accuracy of Reaction-Diffusion (RD) model, this work first proposes to compare the NBTI wear-out data from the RD wear-out model and the reliability simulator - Ultrasim RelXpert, by monitoring the activity of the register file on a Leon3 processor. The simulator wear-out data obtained is considered to be the baseline data and is used to tune the RD model using a novel technique time slicing. It turns out that the tuned RD model NBTI degradation is on an average 80% accurate with respect to RelXpert simulator and its calculation is approximately 8 times faster than the simulator. We come up with a waveform compression technique, for the activity waveforms from the Leon3 register file, which consumes 131KB compared to 256MB required without compression, and also provides 91% accuracy in NBTI degradation, compared to the same obtained without compression. We also propose a NBTI ΔVth estimation/prediction technique to reduce the time consumption of the tuned RD model threshold voltage calculation by an order of with one day degradation being 93% within the same of the tuned RD model. This work further proposes to a novel NBTI Degradation Predictor (NDP), to predict the future NBTI degradation, in a DE2 FPGA for WCET benchmarks. Also we measure the ΔVth variation across the 4 corners of the DE2 FPGA running a single Leon3, which varies from 0.08% to 0.11% of the base Vth

Fiabilisation de Convertisseurs Analogique-Num´erique a Modulation Sigma-Delta

Due to the continuously scaling down of CMOS technology, system-on-chips (SoCs) reliability becomes important in sub-90 nm CMOS node. Integrated circuits and systems applied to aerospace, avionic, vehicle transport and biomedicine are highly sensitive to reliability problems such as ageing mechanisms and parametric process variations. Novel SoCs with new materials and architectures of high complexity further aggravate reliability as a critical aspect of process integration. For instance, random and systematic defects as well as parametric process variations have a large influence on quality and yield of the manufactured ICs, right after production. During ICs usage time, time-dependent ageing mechanisms such as negative bias temperature instability (NBTI) and hot carrier injection (HCI) can significantly degrade ICs performance.La fiabilit´e des ICs est d´efinie ainsi : la capacit´e d’un circuit ou un syst`eme int´egr´e `amaintenir ses param`etres durant une p´eriode donn´ee sous des conditions d´efinies. Les rapportsITRS 2011 consid`ere la fiabilit´e comme un aspect critique du processus d’int´egration.Par cons´equent, il faut faire appel des m´ethodologies innovatrices prenant en comptela fiabilit´e afin d’assurer la fonctionnalit´e du SoCs et la fiabilit´e dans les technologiesCMOS `a l’´echelle nanom´etrique. Cela nous permettra de d´evelopper des m´ethodologiesind´ependantes du design et de la technologie CMOS, en revanche, sp´ecialis´ees en fiabilit´e