Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, scaling to sub-20nm technologies is proving to be challenging as MOSFETs are reaching their fundamental limits and interconnection bottleneck is dominating IC operational power and performance. Migrating to 3-D, as a way to advance scaling, has eluded us due to inherent customization and manufacturing requirements in CMOS that are incompatible with 3-D organization. Partial attempts with die-die and layer-layer stacking have their own limitations. We propose a 3-D IC fabric technology, Skybridge[TM], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge's core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance per watt benefits, and 10X reduction in interconnect lengths vs. scaled 16-nm CMOS. Fabric-level heat extraction features are shown to successfully manage IC thermal profiles in 3-D. Skybridge can provide continuous scaling of integrated circuits beyond CMOS in the 21st century.Comment: 53 Page

Field Effect Transistor Nanosensor for Breast Cancer Diagnostics

Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical properties and small dimensions, silicon nanochannels are ideally suited for extraordinarily high sensitivity. In fact, the high surface-to-volume ratios of these systems make single molecule detection possible. Further, FET biosensors offer the benefits of high speed, low cost, and high yield manufacturing, without sacrificing the sensitivity typical for traditional optical methods in diagnostics. Top down manufacturing methods leverage advantages in Complementary Metal Oxide Semiconductor (CMOS) technologies, making richly multiplexed sensor arrays a reality. Here, we discuss the fabrication and use of silicon nanochannel FET devices as biosensors for breast cancer diagnosis and monitoring

Skybridge: A New Nanoscale 3-D Computing Framework for Future Integrated Circuits

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, continuing the traditional way of scaling to sub-20nm technologies is proving to be very difficult as MOSFETs are reaching their fundamental performance limits [1] and interconnection bottleneck is dominating IC operational power and performance [2]. Migrating to 3-D, as a way to advance scaling, has been elusive due to inherent customization and manufacturing requirements in CMOS architecture that are incompatible with 3-D organization. Partial attempts with die-die [3] and layer-layer [4] stacking have their own limitations [5]. We propose a new 3-D IC fabric technology, Skybridge [6], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge’s core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance/watt benefits, and 10x reduction in interconnect lengths vs. scaled 16-nm CMOS [6]. Fabric-level heat extraction features are found to be effective in managing IC thermal profiles in 3-D. This 3-D integrated fabric proposal overcomes the current impasse of CMOS in a manner that can be immediately adopted, and offers unique solution to continue technology scaling in the 21st century

Stochastic Thermodynamics of Non-Linear Electronic Circuits: A Realistic Framework for Computing around kT

We present a general formalism for the construction of thermodynamically consistent stochastic models of non-linear electronic circuits. The devices constituting the circuit can have arbitrary I-V curves and may include tunnel junctions, diodes, and MOS transistors in subthreshold operation, among others. We provide a full analysis of the stochastic non-equilibrium thermodynamics of these models, identifying the relevant thermodynamic potentials, characterizing the different contributions to the irreversible entropy production, and obtaining different fluctuation theorems. Our work provides a realistic framework to study thermodynamics of computing with electronic circuits. We demonstrate this point by constructing a stochastic model of a CMOS inverter. We find that a deterministic analysis is only compatible with the assumption of equilibrium fluctuations, and analyze how the non-equilibrium fluctuations induce deviations from its deterministic transfer function. Finally, building on the CMOS inverter, we propose a full-CMOS design for a probabilistic bit (or binary stochastic neuron) exploiting intrinsic noise.Comment: Updated versio

Ultra-low power circuits using graphene p-n junctions and adiabatic computing

Recent works have proven the functionality of electrostatically controlled graphene p–n junctions that can serve as basic primitive for the implementation of a new class of compact graphene-based reconfigurable multiplexer logic gates. Those gates, referred as RG-MUXes, while having higher expressive power and better performance w.r.t. standard CMOS gates, they also have the drawback of being intrinsically less power/energy efficient. In this work we address this problem from a circuit perspective, namely, we revisit RG-MUXes as devices that can operate adiabatically and hence with ultra-low (ideally, almost zero) power consumption. More specifically, we show how to build basic logic gates and, eventually, more complex logic functions, by appropriately interconnecting graphene-based p–n junctions as to implement the adiabatic charging principle. We provide a comparison in terms of power and performance against both adiabatic CMOS and their non-adiabatic graphene-based counterparts; characterization results collected from SPICE simulations on a set of representative functions show that the proposed ultra-low power graphene circuits can operate with 1.5–4 orders of magnitude less average power w.r.t. adiabatic CMOS and non-adiabatic graphene counterparts respectively. When it comes to performance, adiabatic graphene shows 1.3 (w.r.t. adiabatic CMOS) to 4.5 orders of magnitude (w.r.t. non-adiabatic technologies) better power-delay product

Intrinsic variability of nanoscale CMOS technology for logic and memory.

The continuous downscaling of CMOS technology, the main engine of development of the semiconductor Industry, is limited by factors that become important for nanoscale device size, which undermine proper device operation completely offset gains from scaling. One of the main problems is device variability: nominally identical devices are different at the microscopic level due to fabrication tolerance and the intrinsic granularity of matter. For this reason, structures, devices and materials for the next technology nodes will be chosen for their robustness to process variability, in agreement with the ITRS (International Technology Roadmap for Semiconductors). Examining the dispersion of various physical and geometrical parameters and the effect these have on device performance becomes necessary. In this thesis, I focus on the study of the dispersion of the threshold voltage due to intrinsic variability in nanoscale CMOS technology for logic and for memory. In order to describe this, it is convenient to have an analytical model that allows, with the assistance of a small number of simulations, to calculate the standard deviation of the threshold voltage due to the various contributions

Reconfigurable three-terminal logic devices using phase-change materials

Conventional solid-state and mass storage memories (such as SRAM, DRAM and the hard disk drive HDD) are facing many technological challenges to meet the ever-increasing demand for fast, low power and cheap data storage solutions. This is compounded by the current conventional computer architectures (such as the von Neumann architecture) with separate processing and storage functionalities and hence data transfer bottlenecks and increased silicon footprint. Beyond the von Neumann computer architecture, the combination of arithmetic-logic processing and (collocally) storage circuits provide a new and promising alternative for computer systems that overcome the many limitations of current technology. However, there are many technical challenges that face the implementation of universal blocks of both logic and memory functions using conventional silicon technology (transistor-transistor logic - TTL, and complementary metal oxide semiconductors - CMOS). Phase-change materials, such as Ge2Sb2Te5 (GST), provide a potential complement or replacement to these technologies to provide both processing and, collocally, storage capability. Existing research in phase-change memory technologies focused on two-terminal non-volatile devices for different memory and logic applications due to their ability to achieve logic-resistive switching in nanosecond time scale, their scalability down to few nanometer-scale cells, and low power requirements. To perform logic functionality, current two-terminal phase-change logic devices need to be connected in series or parallel circuits, and require sequential inputs to perform the required logic function (such as NAND and NOR). In this research programme, three-terminal (3T) non-volatile phase-change memories are proposed and investigated as potential alternative logic cells with simultaneous inputs as reconfigurable, non-volatile logic devices. A vertical 3T logic device structure is proposed in this work based on existing phase-change based memory cell architecture and original concept work by Ovshinsky. A comprehensive, multi-physics finite-element model of the vertical 3T device was constructed in Comsol Multiphysics. This model solves Laplace's equation for the electric potential due to the application of voltage sources. The calculated electric potential and fields provide the Joule heating source in the device, which is used to compute the temperature distribution through solution of the heat diffusion equation, which is necessary to activate the thermally-driven phase transition process. The physically realistic and computationally efficient nucleation- growth model was numerically implemented to model the phase change and resistance change in the Ge2Sb2Te5 (GST) phase-change material in the device, which is combined with the finite- element model using the Matlab programming interface. The changes in electrical and thermal conductivities in the GST region are taken into account following the thermally activated phase transformations between the amorphous-crystalline states using effective medium theory. To determine the appropriate voltage and temperature conditions for the SET and RESET operations, and to optimise the materials and thicknesses of the thermal and heating layers in the device, comprehensive steady-state parametric simulations were carried out using the finite-element multi-physics model. Simulations of transient cycles of writing (SET) and erasing (RESET) processes using appropriate voltage pulses were then carried out on the designed vertical 3T device to study the phase transformations for practical reconfigurable logic operations. The simulations indicated excellent resistance contrast between the logic 1 and 0 states, and successfully demonstrated the feasibility of programming the logic functions of NAND and NOR gates using this 3T configuration

Multilevel Modeling and Architectural Solutions for Emerging Technology Circuits

In the last decades, the main driving force behind the astonishing development of CMOS technology, was the transistor scaling process. The reduction of transistor sizes has granted a continuous boost in circuits performance. But now that the scaling process is reaching its physical limits, researchers are forcusing on new emerging technologies. Research on these new technologies is usually carried on using a traditional approach. Some studies concentrate on new devices without analyzing circuits based on them. Other studies analyze circuit architectures without considering devices characteristics and limitations. However, given that the nature of emerging technologies can be very different from CMOS, new research methodologies should be adopted. A clear link between device and architectural analysis is necessary to understand the true potential of the technology under study. The objective of this PhD thesis is the analysis of emerging technologies using an innovative methodology. Using complex and realistic circuits as benchmark, high level models are built incorporating low level device characteristics. This methodology strongly links device and architectural levels. The methodology was applied to two emerging technologies: NanoMagnet Logic (NML) and Nanoscale Application Specific Integrated Circuits (NASIC). A brief introduction of fundamental information on the two technologies is given in Chapter 1. The application of the methodology on NML technology is divided in two parts (Chapter 2): i) architecture-level timing and performance analysis and circuits optimization; (ii) area and power estimations using VHDL modeling. Starting from an exhaustive analysis of the effects and the consequences derived by the presence of loops in a complex NML sequential architecture, solutions have been proposed to address the problem of signal synchronization, and optimization techniques have been explored for performance maximization. Area and power estimations have been performed on multiple NML architectures in order to obtain a complete evaluation on the implementation of NanoMagnet Logic in comparison with the CMOS technology. Chapter 4 is dedicated to NASIC technology with basic principles described in Chapter 3. Basic computational blocks are implemented using a multilevel modeling approach. A detailed analysis of circuits' area and power estimations is obtained. Techniques to optimize the area of circuits at the cost of reduced throughput were also investigated. The research activity presented in this thesis highlights the development of an innovative methodology based on high-level models that embed information obtained from physical level simulations. By exploiting this methodology to different emerging technologies, such as NML and NASIC, it allows to eciently analyze circuits and therefore to bring architectural improvements