Modeling, design, and characterization of through vias in silicon and glass interposers

Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor and interconnect scaling. Further miniaturization by traditional IC scaling in future planar CMOS technology faces significant challenges. Stacking of ICs (3D IC) using three dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnect latency and power dissipation while reducing the size of the chip and enhancing performance. Interposer technology with ultra-fine pitch interconnections needs to be developed to support the huge I/O connection requirement for packaging 3D ICs. Through vias in stacked silicon ICs and interposers are the key components of a 3D system. The objective of this dissertation is to model through vias in 3D silicon and glass interposers and, to address power and high-speed signal integrity issues in 3D interposers considering silicon biasing effects. An equivalent circuit model of the through via in silicon interposer (Si TPV) has been proposed considering the bias voltage dependent Metal-Oxide-Semiconductor (MOS) capacitance effect. Important design guidelines and optimizations are proposed for Si TPVs used in the signal delivery network, power delivery network (PDN), and as variable capacitors. Through vias in glass interposers (Glass TPVs) are modeled, designed and simulated by using electromagnetic field solvers. Signal and power integrity analyses are performed for silicon and glass interposers. PDN design is proposed by utilizing the MOS capacitance of the Si TPVs for decoupling.PhDCommittee Chair: Tummala, Rao; Committee Co-Chair: Swaminathan, Madhavan; Committee Member: Lim, Sung Kyu; Committee Member: Mukhopadhyay, Saibal; Committee Member: Sitaraman, Suresh; Committee Member: Sundaram, Venk

Thermal performance enhancement of packaging substrates with integrated vapor chamber

The first part of this research investigates the effects of copper structures, such as copper through-package-vias (TPVs), and copper traces in redistribution layer (RDL), on the thermal performance of glass interposers through numerical and experimental approaches. Numerical parametric study on 2.5D interposers shows that as more copper structures are incorporated in glass interposers, the performance of silicon and glass interposers becomes closer, showing 31% difference in thermal resistance, compared to 53% difference without any copper structures in both interposers. In the second part of this study, a thermal model of glass interposer mounted on the vapor chamber integrated PCB is developed using multi-scale modeling scheme. The comparison of thermal performance between silicon and glass interposers shows that integration of vapor chamber with PCB makes thermal performance of both interposers almost identical, overcoming the limitation posed by low thermal conductivity of glass. The third part of this thesis focuses on design, fabrication, and performance measurement of PCB integrated with vapor chamber. Copper micropillar wick structure is fabricated on PCB with electroplating process, and its wettability is enhanced by silica nanoparticle coating. Design of the wick for the vapor chamber is determined based on the capillary performance and permeability test results. Fabricated device with ultra-thin thickness (~800 µm) shows higher thermal performance than copper plated PCB with the same thickness. Finally, 3D computational fluid dynamics/heat transfer model of the vapor chamber is developed, and modeling result is compared with test result.Ph.D

Thermal Isolation of High Power Devices in Heterogeneous Integration

Heterogeneous integration (HI) technologies present an important development in the pursuit of higher performance and reduced size, weight, power and cost of electronic systems (SWAP-C). HI systems, however, pose additional challenges for thermal management due to the disparate operating conditions of the devices. If the thermal coupling between devices can be reduced through a strategy of thermal isolation, then the SWAP-C of the accompanying thermal solution can also be reduced. This is in contrast to the alternative scenario of cooling the entire package to the maximum reliable temperature of the most sensitive devices. This isolation strategy must be implemented without a significant increase in device interconnect distances. A counter-intuitive approach is to seek packaging materials of low thermal conductivity – e.g. glass – and enhance them with arrays of metallic through-layer vias. This dissertation describes the first ever demonstration of integrating such via-enhanced interposers with microfluidic cooling, a thermal solution key to the high power applications for which HI was developed. Among the interposers tested, the best performing were shown to exhibit lower thermal coupling than bulk silicon in selective regions, validating their ability to provide thermal isolation. In the course of the study, the via-enhanced interposer is modeled as a thermal metamaterial with desirable, highly-anisotropic properties. Missing from the supporting literature is an accurate treatment of these interposers under such novel environments as microfluidic cooling. This dissertation identifies a new phenomenon, thermal microspreading, which governs how heat couples into a conductive via array from its surroundings. Both finite element analysis (FEA) and a new analytic solution of the associated boundary value problem (BVP) are used to develop a model for describing microspreading. This improves the ability to correctly predict the thermal behavior of via-enhanced interposers under diverse conditions

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Heterogeneous Integration on Silicon-Interconnect Fabric using fine-pitch interconnects (≤10 �m)

Today, the ever-growing data-bandwidth demand is pushing the boundaries of the traditional printed circuit board (PCB) based integration schemes. Moreover, with the apparent saturation of semiconductor scaling, commonly called Moore's law, system scaling warrants a paradigm shift in packaging technologies, assembly techniques, and integration methodologies. In this work, a superior alternative to PCBs called the Silicon-Interconnect Fabric (Si-IF) is investigated. The Si-IF is a silicon-based, package-less, fine-pitch, highly scalable, heterogeneous integration platform for wafer-scale systems. In this technology, unpackaged dielets are assembled on the Si-IF at small inter-dielet spacings (≤100 �m) using fine-pitch (≤10 �m) die-to-substrate interconnects. A novel assembly process using a solder-less direct metal-metal (gold-gold and copper-copper) thermal compression bonding was developed. Using this process, sub-10 �m pitch interconnects with a low specific contact resistance of ≤0.7 Ω-�m2 were successfully demonstrated. Because of the tightly packed Si-IF assembly, the communication links between the neighboring dies are short (≤500 �m) with low loss (≤2 dB), comparable to on-chip connections. Consequently, simple buffers can transfer data between dies using a Simple Universal Parallel intERface for chips (SuperCHIPS) at low latency (<30 ps), low energy per bit (≤0.03 pJ/b), and high data-rates (up to 10 Gbps/link), corresponding to an aggregate bandwidth up to 8 Tbps/mm. The benefits of the SuperCHIPS protocol were experimentally demonstrated to provide 5-90X higher data-bandwidth, 8-30X lower latency, and 5-40X lower energy per bit compared to existing integration schemes. This dissertation addresses the assembly technology and communication protocols of the Si-IF technology

Compliant copper microwire arrays for reliable interconnections between large low-CTE packages and printed wiring board

The trend to high I/O density, performance and miniaturization at low cost is driving the industry towards shrinking interposer design rules, requiring a new set of packaging technologies. Low-CTE packages from silicon, glass and low-CTE organic substrates enable high interconnection density, high reliability and integration of system components. However, the large CTE mismatch between the package and the board presents reliability challenges for the board-level interconnections. Novel stress-relief structures that can meet reliability requirements along with electrical performance while meeting the cost constraints are needed to address these challenges. This thesis focuses on a comprehensive methodology starting with modeling, design, fabrication and characterization to validate such stress-relief structures. This study specifically explores SMT-compatible stress-relief microwire arrays in thin polymer carriers as a unique and low-cost solution for reliable board-level interconnections between large low-CTE packages and printed wiring boards. The microwire arrays are pre-fabricated in ultra-thin carriers using low-cost manufacturing processes such as laser vias and copper electroplating, which are then assembled in between the interposer and printed wiring board (PWB) as stress-relief interlayers. The microwire array results in dramatic reduction in solder stresses and strains, even with larger interposer sizes (20 mm × 20 mm), at finer pitch (400 microns), without the need for underfill. The parallel wire arrays result in low resistance and inductance, and therefore do not degrade the electrical performance. The scalability of the structures and the unique processes, from micro to nanowires, provides extendibility to finer pitch and larger package sizes. Finite element method (FEM) was used to study the reliability of the interconnections to provide guidelines for the test vehicle design. The models were built in 2.5D geometries to study the reliability of 400 µm-pitch interconnections with a 100 µm thick, 20 mm × 20 mm silicon package that was SMT-assembled onto an organic printed wiring board. The performance of the microwire array interconnection is compared to that of ball grid array (BGA) interconnections, in warpage, equivalent plastic strain and projected fatigue life. A unique set of materials and processes was used to demonstrate the low-cost fabrication of microwire arrays. Copper microwires with 12 µm diameter and 50 µm height were fabricated on both sides of a 50 µm thick, thermoplastic polymer carrier using dryfilm based photolithography and bottom-up electrolytic plating. The copper microwire interconnections were assembled between silicon interposer and FR-4 PWB through SMT-compatible process. Thermal mechanical reliability of the interconnections was characterized by thermal cycling test from -40°C to 125°C. The initial fatigue failure in the interconnections was identified at 700 cycles in the solder on the silicon package side, which is consistent with the modeling results. This study therefore demonstrated a highly-reliable and SMT-compatible solution for board-level interconnections between large low-CTE packages and printed wiring board.Ph.D

Integrated silicon photonic packaging

Silicon photonics has garnered plenty of interests from both the academia and industry due to its high-speed transmission potential as well as sensing capability to complement silicon electronics. This has led to significant growth on the former, valuing at US$626.8M in 2017 and is expected to grow 3-fold to US$ 1,988.2M by 2023, based on data from MarketsandMarkets™. Silicon photonics’ huge potential has led to worldwide attention on fundamental research, photonic circuit designs and device fabrication technologies. However, as with silicon electronics in its early years, the silicon photonics industry today is extremely fragmented with various chip designs and layouts. Most silicon photonic devices fabricated are not able to reach the hand of consumers, due to a lack of information related to packaging design rules, components and processes. The importance of packaging technologies, which play a crucial role in turning photonic circuits and devices into the final product that end users can used in their daily lives, has been overlooked and understudied. This thesis aims to – 1. fill the missing gap by adapting existing electronics packaging techniques, 2. assess its scalability, 3. assess supply chain integration and finally 4. develop unique packaging approaches specifically for silicon photonics. The first section focused on high density packaging components and processes using University of California, Berkeley’s state-of-the-art silicon photonic MEMS optical switches as test devices. Three test vehicles were developed using (1) via-less ceramic and (2) spring-contacted electrical interposers for 2D integration and (3) through-glass-via electrical interposers for 2.5D heterogeneous integration. A high density (1) lidless fibre array and (2) a 2D optical interposer, which allows pitch-reduction of optical waveguides were also developed in this thesis. Together, these components demonstrated the world’s first silicon 2 photonic MEMS optical switch package and subsequently the highest density silicon photonic packaging components with 512 electrical I/Os and 272 optical I/Os. The second section then moved away from active optical coupling that was used in the former, investigating instead passive optical packaging concepts for the future. Two approaches were investigated - (1) grating-to-grating and (2) evanescent couplings. The former allows the development of pluggable packages, separating fibre coupling away from the device while the latter allows simultaneous optical and electrical packaging on a glass wafer in a single process. Lastly, the knowhow and concepts developed in this thesis were compiled into packaging design rules and subsequently introduced into H2020-MORPHIC, PIXAPP packaging training courses (as a trainer) and other packaging projects within the group

Modeling, design, materials, processes and reliability of multi-layer redistribution wiring layers on glass substrates for next generation of high-performance computing applications

There is a growing demand for high performance computing with miniaturization in many electronic systems such as servers for cloud computing, accurate weather prediction, smart mobile and wearable devices and autonomous driving cars. The development of 2.5D silicon interposers in 2010 for heterogeneous integration of graphical processing unit (GPU) to high bandwidth memory (HBM) dies addressed this demand to a certain extent. The back-end-of-line (BEOL) RDL processes in silicon interposers have reached the peak with data rate per signal trace due to the high resistance and capacitance of BEOL RDL, limiting the system bandwidth for 2.5D silicon interposers. The cost of such interposers is also high for large body size substrates (> 1200 sq. mm) due to the fabrication on wafer-based platforms and hence, such interposers have been primarily been used today for cost-insensitive applications like cloud computing. To address these limitations, panel-based organic package substrates with a vast range of body sizes (500-5000 sq.mm) have been under development. These low-cost, high performance panel-based substrates will bring down the cost of high-performance computing systems as well as introduce 2.5D interposers for consumer applications like mobile computing. However, such panel-based substrates have not been able to scale multi-layer polymer RDL below 5 µm RDL which is the primary requirement for 2.5D interposer substrates. The objectives of this research are to address the scaling limitations of multi-layer polymer RDL down to 2 µm and below. This research is focused on addressing these limitations by: (A) Modeling for layer-to-layer registration to predict the fundamental limit of capture pad required for laminate and glass core substrates (B) Design of multi-layer polymer RDL for 5X bandwidth and 3X lower latency than silicon BEOL RDL (C) Design and demonstration of novel materials and processes for scaling polymer RDL well below 2 µm using low-cost panel-based tools and processes (D) Reliability analysis of 2 µm multi-layer polymer RDL and identifying future needs for novel polymer dielectrics for scaling polymer RDL to sub 1-micron features.Ph.D

MICROELECTRONICS PACKAGING TECHNOLOGY ROADMAPS, ASSEMBLY RELIABILITY, AND PROGNOSTICS

This paper reviews the industry roadmaps on commercial-off-the shelf (COTS) microelectronics packaging technologies covering the current trends toward further reducing size and increasing functionality. Due tothe breadth of work being performed in this field, this paper presents only a number of key packaging technologies. The topics for each category were down-selected by reviewing reports of industry roadmaps including the International Technology Roadmap for Semiconductor (ITRS) and by surveying publications of the International Electronics Manufacturing Initiative (iNEMI) and the roadmap of association connecting electronics industry (IPC). The paper also summarizes the findings of numerous articles and websites that allotted to the emerging and trends in microelectronics packaging technologies. A brief discussion was presented on packaging hierarchy from die to package and to system levels. Key elements of reliability for packaging assemblies were presented followed by reliabilty definition from a probablistic failure perspective. An example was present for showing conventional reliability approach using Monte Carlo simulation results for a number of plastic ball grid array (PBGA). The simulation results were compared to experimental thermal cycle test data. Prognostic health monitoring (PHM) methods, a growing field for microelectronics packaging technologies, were briefly discussed. The artificial neural network (ANN), a data-driven PHM, was discussed in details. Finally, it presented inter- and extra-polations using ANN simulation for thermal cycle test data of PBGA and ceramic BGA (CBGA) assemblies

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table