Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers

Electronic Materials with Wide Band Gap: Recent Developments

The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II. Quickly a tendency to alternative materials with wider band gap became apparent, starting with silicon ($E_g=1.12$ eV). This improved the signal/noise ratio for classical electronic applications. Both semiconductors have tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or several anions and cations other semiconductors with wider $E_g$ are obtained, that are transparent for visible light and belong to the group of wide band gap semiconductors. Nowadays some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue spectral region. Oxide crystals, such as ZnO and $\beta$-Ga$_2$O$_3$, offer similarly good electronic properties but suffer still from significant difficulties in obtaining stable and technically sufficient $p$-type conductivity.Comment: 25 pages, 8 figures, 4 table

Exchange Anisotropy in Epitaxial and Polycrystalline NiO/NiFe Bilayers

(001) oriented NiO/NiFe bilayers were grown on single crystal MgO (001) substrates by ion beam sputtering in order to determine the effect that the crystalline orientation of the NiO antiferromagnetic layer has on the magnetization curve of the NiFe ferromagnetic layer. Simple models predict no exchange anisotropy for the (001)-oriented surface, which in its bulk termination is magnetically compensated. Nonetheless exchange anisotropy is present in the epitaxial films, although it is approximately half as large as in polycrystalline films that were grown simultaneously. Experiments show that differences in exchange field and coercivity between polycrystalline and epitaxial NiFe/NiO bilayers couples arise due to variations in induced surface anisotropy and not from differences in the degree of compensation of the terminating NiO plane. Implications of these observations for models of induced exchange anisotropy in NiO/NiFe bilayer couples will be discussed.Comment: 23 pages in RevTex format, submitted to Phys Rev B

Strain-induced ferroelectricity in simple rocksalt binary oxides

The alkaline earth binary oxides adopt a simple rocksalt structure and form an important family of compounds because of their large presence in the earth's mantle and their potential use in microelectronic devices. In comparison to the class of multifunctional ferroelectric perovskite oxides, however, their practical applications remain limited and the emergence of ferroelectricity and related functional properties in simple binary oxides seems so unlikely that it was never previously considered. Here, we show using first-principles density functional calculations that ferroelectricity can be easily induced in simple alkaline earth binary oxides such as barium oxide (BaO) using appropriate epitaxial strains. Going beyond the fundamental discovery, we show that the functional properties (polarization, dielectric constant and piezoelectric response) of such strained binary oxides are comparable in magnitude to those of typical ferroelectric perovskite oxides, so making them of direct interest for applications. Finally, we show that magnetic binary oxides such as EuO, with the same rocksalt structure, behave similarly to the alkaline earth oxides, suggesting a route to new multiferroics combining ferroelectric and magnetic properties

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface