Proximitized Materials

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena.Comment: Invited Review to appear in Materials Today, 28 pages, 22 figure

A polymorphic hardware platform

In the domain of spatial computing, it appears that platforms based on either reconfigurable datapath units or on hybrid microprocessor/logic cell organizations are in the ascendancy as they appear to offer the most efficient means of providing resources across the greatest range of hardware designs. This paper encompasses an initial exploration of an alternative organization. It looks at the effect of using a very fine-grained approach based on a largely undifferentiated logic cell that can be configured to operate as a state element, logic or interconnect - or combinations of all three. A vertical layout style hides the overheads imposed by reconfigurability to an extent where very fine-grained organizations become a viable option. It is demonstrated that the technique can be used to develop building blocks for both synchronous and asynchronous circuits, supporting the development of hybrid architectures such as globally asynchronous, locally synchronous

Growth and Electrical Properties of Chemical Vapour Deposited Low Dimensional sp2 Carbons.

This thesis describes the growth of sp2 carbon materials - namely graphene and carbon nanotube (CNT) materials using a chemical vapour deposition (CVD) process. A novel CVD process tool based on a photothermal process (PT-CVD) that differs from standard thermal CVD has been developed. This thesis reports the investigations into the properties of the deposited carbon nanomaterials and applications that exploit their electronic properties. The first investigation is into the growth of vertically aligned MWCNT forests. Growth of CNTs at 370°C by a one-step PT-CVD method was demonstrated. The growth rate can reach ~1.3 μm/min, which is faster than most other reported thermal CVD methods. The use of bimetallic catalyst (Fe/Ti) and the use of rapid thermal process are the keys to this process. AFM topography studies showed that the fast top-down heating mode of the PT-CVD leads to the formation of a Fe/Ti uniform solid solution, which is believed to improve the CNT growth. These CNTs are composed of a few layer crystalline graphene sheets with a 5-6 nm diameter. Raman scattering provides supporting evidence that the as-grown CNTs are of high quality, better than some CNTs grown at higher temperatures by traditional CVD methods. CVD growth of graphene was investigated using Cu foils as substrate, with the field-effect in the graphene subsequently demonstrated by transferring it to a back-gate bottom contact transistor arrangement using poly-4-vinyl-phenol gate dielectric as an alternative to oxide based insulators. This graphene transistor showed a simple, inexpensive fabrication method that is completely compatible to large scale fabrication of organic devices, to demonstrate a field effect hole mobility of 37 cm2/Vs. Despite the mobility being lower than that found in exfoliated graphene, it demonstrates the potential of a graphene based all carbon transistor for large area electronics. The fabrication and electrical performance of a 3 terminal graphene device is further reported. This device displayed characteristics similar to a p-type graphene FET. While past investigations of distortion and saturation in transfer characteristics of graphene FET indicated that metal-graphene interaction may be the controlling mechanism, this device operation is based on the design of transferring graphene onto a Diamond-like-carbon DLC/p-Si heterostructure with Si as the back contact and with the DLC acting as the dielectric support in contact to graphene. Thus, this provided a mechanism for the DLC/p-Si heterojunction to moderate the I-V characteristics of this device, resulting in a p-type only conduction process in graphene that is also saturable. Following the work on using conventional thermal CVD (T-CVD) for graphene growth, we demonstrated the possibility of using the PT-CVD to develop a graphene growth process. It is found that the non-thermal equilibrium nature of PT-CVD process resulted in a much shorter duration in both heating up and cooling down, thus allows the reduction of the overall growth time for graphene. The choice of performing growth on Ni also allows for the alleviation of hydrogen blister damage that is commonly encountered during growth on Cu substrates. To characterize the film’s electrical and optical properties, pristine PT-CVD grown graphene was used as the transparent electrode material in an organic photovoltaic devices (OPV) and is found to be comparable to that reported using pristine graphene prepared by conventional CVD

Integrated Circuits/Microchips

With the world marching inexorably towards the fourth industrial revolution (IR 4.0), one is now embracing lives with artificial intelligence (AI), the Internet of Things (IoTs), virtual reality (VR) and 5G technology. Wherever we are, whatever we are doing, there are electronic devices that we rely indispensably on. While some of these technologies, such as those fueled with smart, autonomous systems, are seemingly precocious; others have existed for quite a while. These devices range from simple home appliances, entertainment media to complex aeronautical instruments. Clearly, the daily lives of mankind today are interwoven seamlessly with electronics. Surprising as it may seem, the cornerstone that empowers these electronic devices is nothing more than a mere diminutive semiconductor cube block. More colloquially referred to as the Very-Large-Scale-Integration (VLSI) chip or an integrated circuit (IC) chip or simply a microchip, this semiconductor cube block, approximately the size of a grain of rice, is composed of millions to billions of transistors. The transistors are interconnected in such a way that allows electrical circuitries for certain applications to be realized. Some of these chips serve specific permanent applications and are known as Application Specific Integrated Circuits (ASICS); while, others are computing processors which could be programmed for diverse applications. The computer processor, together with its supporting hardware and user interfaces, is known as an embedded system.In this book, a variety of topics related to microchips are extensively illustrated. The topics encompass the physics of the microchip device, as well as its design methods and applications

Three Dimensional Nanowire Array Piezo-phototronic and Piezo-photo-magnetotronic Sensors

Piezotronic and piezo-phototronic is a burgeoning field of study which emerges from the coupling of intrinsic materials properties exhibited by non-centrosymmetric semiconductors. In the past decade research efforts were mainly focused on the wurtzite family of 1D nanostructures, with major emphasis on ZnO nanowire nanogenerators, MS piezotronic transistors, LEDs and photodetectors mainly integrated on single nanowires. In view of previously known advantages of charge carrier separation in radial heterojunctions, particularly in type-II core/shell nanowires, it can be anticipated that the performance of photosensing devices can be largely enhanced by piezo-phototronic effect. Moreover, the performance metrics can be further improved in an array of nanowires where geometrical feature enabled multiple reflection can efficiently trap incident illumination. The crux of this dissertation lies in the development of 3D type-II core/shell nanowire array based piezo-phototronic device and also to investigate the effect of magnetic field on ZnO nanowire arrays based piezotronic and piezo-phototronic device for new class of sensors. In this regard, prototype piezo-phototronic broadband photodetectors integrated on two material systems, namely type-II CdSe/ZnTe 3D core/shell nanowire arrays and fully wide band gap type-II ZnO/ZnS 3D core/shell nanowire arrays have been developed where the photodetection performance of each device exhibits high sensitivity, fast response and large responsivity. The application of piezo-phototronic effect further improves the device performance by three to four orders of magnitude change numerically calculated from absolute responsivities at multiple wavelengths. A 3D ZnO nanowire array based new class of piezo-photo-magnetotronic sensor is also developed for detection of pressure, illumination and magnetic field suggesting multiple functionality of a single device where more than one effect can be coupled together to exhibit piezo-magnetotronic or piezo-photo-magnetotronic type of device behavior

Three Dimensional Nanowire Array Piezo-phototronic and Piezo-photo-magnetotronic Sensors

Piezotronic and piezo-phototronic is a burgeoning field of study which emerges from the coupling of intrinsic materials properties exhibited by non-centrosymmetric semiconductors. In the past decade research efforts were mainly focused on the wurtzite family of 1D nanostructures, with major emphasis on ZnO nanowire nanogenerators, MS piezotronic transistors, LEDs and photodetectors mainly integrated on single nanowires. In view of previously known advantages of charge carrier separation in radial heterojunctions, particularly in type-II core/shell nanowires, it can be anticipated that the performance of photosensing devices can be largely enhanced by piezo-phototronic effect. Moreover, the performance metrics can be further improved in an array of nanowires where geometrical feature enabled multiple reflection can efficiently trap incident illumination. The crux of this dissertation lies in the development of 3D type-II core/shell nanowire array based piezo-phototronic device and also to investigate the effect of magnetic field on ZnO nanowire arrays based piezotronic and piezo-phototronic device for new class of sensors. In this regard, prototype piezo-phototronic broadband photodetectors integrated on two material systems, namely type-II CdSe/ZnTe 3D core/shell nanowire arrays and fully wide band gap type-II ZnO/ZnS 3D core/shell nanowire arrays have been developed where the photodetection performance of each device exhibits high sensitivity, fast response and large responsivity. The application of piezo-phototronic effect further improves the device performance by three to four orders of magnitude change numerically calculated from absolute responsivities at multiple wavelengths. A 3D ZnO nanowire array based new class of piezo-photo-magnetotronic sensor is also developed for detection of pressure, illumination and magnetic field suggesting multiple functionality of a single device where more than one effect can be coupled together to exhibit piezo-magnetotronic or piezo-photo-magnetotronic type of device behavior

Organic Materials for Photonics: Properties and Applications

Photonics will play a key-role for the future development of ICT and healthcare and organic semiconductors are promising candidates to fulfil the capacity of photonics and deliver on its promises. This “photonics revolution” relies on novel and more performing materials, tailored for the specific requirements of real-world applications, and on reliable and cheap technologies, which can attract investments to address the transition from academia to industry. In this dissertation, I will report my findings on conjugated polymers suitable for photonic applications and demonstrate their use into low-cost photonic structures, as proof of concept. The first part is dedicated to the study of an aggregation-induced emission polymer, whose fluorescence is enhanced in the aggregated solid-state thanks to the restrictions of intramolecular rotations in contrast to typical planar conjugated polymers. I will show its exceptional fundamental photophysical properties which enable the reduction of non-radiative pathways and makes it attractive for its use in organic light-emitting diodes. In the second part, I will present the application of conjugated polymers into flexible all-polymer microcavities fabricated through a low-cost process based on spin coating. The incorporation of functional defects in periodic dielectric structures with optical feedback will enable the change in the photonic density of states. I will report the investigation on photonic resonators embedding an aggregation-induced polymer emitting in the visible and a novel near-infrared oligomer, assessing high quality factors and tuning of their radiative rates to achieve low threshold optically pumped lasers. In the last part, I will show the infiltration of conjugated engineered materials into porous silicon microcavities to enable a novel class of photonically-enhanced chips for communications and sensing. A cheap electrochemical technique has been employed to fabricate one-dimensional resonators, which I characterized fully to demonstrate the variation of the photonic density of states and an efficient approach to novel hybrid photonic devices

Factors shaping the evolution of electronic documentation systems

The main goal is to prepare the space station technical and managerial structure for likely changes in the creation, capture, transfer, and utilization of knowledge. By anticipating advances, the design of Space Station Project (SSP) information systems can be tailored to facilitate a progression of increasingly sophisticated strategies as the space station evolves. Future generations of advanced information systems will use increases in power to deliver environmentally meaningful, contextually targeted, interconnected data (knowledge). The concept of a Knowledge Base Management System is emerging when the problem is focused on how information systems can perform such a conversion of raw data. Such a system would include traditional management functions for large space databases. Added artificial intelligence features might encompass co-existing knowledge representation schemes; effective control structures for deductive, plausible, and inductive reasoning; means for knowledge acquisition, refinement, and validation; explanation facilities; and dynamic human intervention. The major areas covered include: alternative knowledge representation approaches; advanced user interface capabilities; computer-supported cooperative work; the evolution of information system hardware; standardization, compatibility, and connectivity; and organizational impacts of information intensive environments

Liquid Metal Printing with Scanning Probe Lithography for Printed Electronics

In den letzten Jahren hat das „Internet der Dinge“ (Englisch Internet of Things, abgekürzt IoT), das auch als Internet of Everything (Deutsch frei „Internet von Allem“) bezeichnet wird, mit dem Aufkommen der „Industrie 4.0“ einen Strom innovativer und intelligenter sensorgestützter Elektronik der neuen Generation in den Alltag gebracht. Dies erfordert auch die Herstellung einer riesigen Anzahl von elektronischen Bauteilen, einschließlich Sensoren, Aktoren und anderen Komponenten. Gleichzeitig ist die herkömmliche Elektronikfertigung zu einem hochkomplexen und investitionsintensiven Prozess geworden. In dem Maße, wie die Zahl der elektronischen Bauteile und die Nachfrage nach neuen, fortschrittlicheren elektronischen Bauteilen zunimmt, steigt auch die Notwendigkeit, effizientere und nachhaltigere Wege zur Herstellung dieser Bauteile zu finden. Die gedruckte Elektronik ist ein wachsender Markt, der diese Nachfrage befriedigen und die Zukunft der Herstellung von elektronischen Geräten neu gestalten könnte. Sie erlaubt eine einfache und kostengünstige Produktion und ermöglicht die Herstellung von Geräten auf Papier- oder Kunststoffsubstraten. Für die Herstellung gibt es dabei eine Vielzahl von Methoden. Techniken auf der Grundlage der Rastersondenlithografie waren dabei schon immer Teil der gedruckten Elektronik und haben zu Innovationen in diesem Bereich geführt. Obwohl die Technologie noch jung ist und der derzeitige Stand der gedruckten Elektronik im industriellen Maßstab, wie z. B. die Herstellung kompletter integrierter Schaltkreise, stark limitiert ist, sind die potenziellen Anwendungen enorm. Im Mittelpunkt der Entwicklung gedruckter elektronischer Schaltungen steht der Druck leitfähiger und anderer funktionaler Materialien. Die meisten der derzeit verfügbaren Arbeiten haben sich dabei auf die Verwendung von Tinten auf Nanopartikelbasis konzentriert. Die Herstellungsschritte auf der Grundlage von Tinten auf Nanopartikelbasis sind komplizierte Prozesse, da sie das Ausglühen (Englisch Annealing) und weitere Nachbearbeitungsschritte umfassen, um die gedruckten Muster leitfähig zu machen. Die Verwendung von Gallium-basierten, bei/nahe Raumtemperatur flüssigen Metallen und deren direktes Schreiben für vollständig gedruckte Elektronik ist immer noch ungewöhnlich, da die Kombination aus dem Vorhandensein einer Oxidschicht, hohen Oberflächenspannungen und Viskosität ihre Handhabung erschwert. Zu diesem Zweck zielt diese Arbeit darauf ab, Methoden zum Drucken von Materialien, einschließlich Flüssigmetallen, zu entwickeln, die mit den verfügbaren Druckmethoden nicht oder nur schwer gedruckt werden können und diese Methoden zur Herstellung vollständig gedruckter elektronischer Bauteile zu verwenden. Weiter werden Lösungen für Probleme während des Druckprozesses untersucht, wie z. B. die Haftung der Tinte auf dem Substrat und andere abscheidungsrelevante Aspekte. Es wird auch versucht, wissenschaftliche Fragen zur Stabilität von gedruckten elektronischen Bauelementen auf Flüssigmetallbasis zu beantworten. Im Rahmen der vorliegenden Arbeit wurde eine auf Glaskapillaren basierenden Direktschreibmethode für das Drucken von Flüssigmetallen, hier Galinstan, entwickelt. Die Methode wurde auf zwei unterschiedlichen Wegen implementiert: Einmal in einer „Hochleistungsversion“, basierend auf einem angepassten Nanolithographiegerät, aber ebenfalls in einer hochflexiblen, auf Mikromanipulatoren basierenden Version. Dieser Aufbau erlaubt einen on-the-fly („im Fluge“) kapillarbasierten Druck auf einer breiten Palette von Geometrien, wie am Beispiel von vertikalen, vertieften Oberflächen sowie gestapelten 3D-Gerüsten als schwer zugängliche Oberflächen gezeigt wird. Die Arbeit erkundet den potenziellen Einsatz dieser Methode für die Herstellung von vollständig gedruckten durch Flüssigmetall ermöglichten Bauteilen, einschließlich Widerständen, Mikroheizer, p-n-Dioden und Feldeffekttransistoren. Alle diese elektronischen Bauelemente werden ausführlich charakterisiert. Die hergestellten Mikroheizerstrukturen werden für temperaturgeschaltete Mikroventile eingesetzt, um den Flüssigkeitsstrom in einem Mikrokanal zu kontrollieren. Diese Demonstration und die einfache Herstellung zeigt, dass das Konzept auch auf andere Anwendungen, wie z.B. die bedarfsgerechte Herstellung von Mikroheizern für in-situ Rasterelektronenmikroskop-Experimente, ausgeweitet werden kann. Darüber hinaus zeigt diese Arbeit, wie PMMA-Verkapselung als effektive Barriere gegen Sauerstoff und Feuchtigkeit fungiert und zusätzlich als brauchbarer mechanischer Schutz der auf Flüssigmetall basierenden gedruckten elektronischen Bauteile wirken kann. Insgesamt zeigen der alleinstehende, integrierte Herstellungsablauf und die Funktionalität der Geräte, dass das Potenzial des Flüssigmetall-Drucks in der gedruckten Elektronik viel größer ist als einzig die Verwendung zur Verbindung konventioneller elektronischer Bauteile. Neben der Entwicklung von Druckverfahren und der Herstellung elektronischer Bauteile befasst sich die Arbeit auch mit der Korrosion und der zusätzlichen Legierung von konventionellen Metallelektroden in Kontakt mit Flüssigmetallen, welche die Stabilität der Bauteil beinträchtigen könnten. Zu diesem Zweck wurde eine korrelierte Materialinteraktionsstudie von gedruckten Galinstan- und Goldelektroden durchgeführt. Durch die kombinierte Anwendung von optischer Mikroskopie, vertikaler Rasterinterferometrie, Rasterelektronenmikroskopie, Röntgenphotonenspektroskopie und Rasterkraftmikroskopie konnte der Ausbreitungsprozess von Flüssigmetalllinien auf Goldfilmen eingehend charakterisiert werden. Diese Studie zeigt eine unterschiedliche Ausbreitung der verschiedenen Komponenten des Flüssigmetalls sowie die Bildung von intermetallischen Nanostrukturen auf der umgebenden Goldfilmoberfläche. Auf der Grundlage der erhaltenen zeitabhängigen, korrelierten Charakterisierungsergebnisse wird ein Modell für den Ausbreitungsprozess vorgeschlagen, das auf dem Eindringen des Flüssigmetalls in den Goldfilm basiert. Um eine ergänzende Perspektive auf die interne Nanostruktur zu erhalten, wurde die Röntgen-Nanotomographie eingesetzt, um die Verteilung von Gold, Galinstan und intermetallischen Phasen in einem in das Flüssigmetall getauchten Golddraht zu untersuchen. Schlussendlich werden Langzeitmessungen des Widerstands an Flüssigmetallleitungen, die Goldelektroden verbinden, durchgeführt, was dazu beiträgt, die Auswirkungen von Materialwechselwirkungen auf elektronische Anwendungen zu bewerten