Photomixers as tunable terahertz local oscillators

This work reports on the development of the photomixing technology and its immediate application to realize a tunable coherent source in the terahertz (THz) frequency range with an unprecedented bandwidth. An extensive experimental study of low-temperature-grown gallium arsenide (LT- GaAs) and ion-implanted GaAs as photomixing materials is performed in order to determine the optimal material parameters and fabrication conditions. Defect Engineering allows to create photoconducting materials with outstanding properties for THz signal generation. The type and concentration of semiconductor defects has a critical importance in the performance of the material used for photomixing. In LT-GaAs, defects are highly dependent on the arsenic beam equivalent pressure (BEP), growth and anneal temperature. Unfortunately, the growth temperature at which an LT- GaAs sample shows optimal properties lacks very often of fabrication reproducibility. In contrast to LT-GaAs, the defects created in ion-implanted GaAs can be tailored by varying the implantation dose and energy. In order to achieve a given concentration of defects, Monte Carlo simulations were performed to determine optimal implantation conditions. The precise control over implantation dose and energy allows to overcome the reproducibility limitations of LT-GaAs. Photomixers were fabricated patterning Ti/Au interdigitated electrodes by electron beam lithography on the feed point of different planar antenna designs (resonant dipoles and broadband logarithmic spirals). Electromagnetic simulations of the radiating structures are shown. In addition, semiconductor simulations were performed, revealing the build-up of space charge regions next to the electrodes. The problematic of space charge formation is analyzed and discussed. Experiments with optimized photomixers demonstrate successfully pumping of astronomical heterodyne receivers at 450 GHz with a superconductor-insulator-superconductor (SIS) mixer and at 750 GHz with a hot-electron-bolometer (HEB) mixer. The double sideband (DSB) noise temperature of the astronomical receiver pumped by a photomixer and by a solid state local oscillator (both measured at an intermediate frequency band of 2 to 4 GHz) were identical (Treceiver = 170 K). In addition to the photomixing results, the issue of frequency stabilization of free-running lasers is covered. Experiments were performed using an optical comb generator as a relative frequency reference. Under the frequency lock condition, the beat signal fulfilled the linewidth requirements for the photomixing system to be used as a local oscillator for heterodyne receivers in radio astronomy

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared

Doping Profile Measurements in Silicon Using Terahertz Domain Spectroscopy (THz-TDS) Via Electrochemical Anodic Oxidation

Doping profiles are engineered to manipulate device properties and to determine electrical performances of microelectronic devices frequently. To support engineering studies afterward, essential information is usually required from physically characterized doping profiles. Secondary Ion Mass Spectrometry (SIMS), Spreading Resistance Profiling (SRP) and Electrochemical Capacitance Voltage (ECV) profiling are standard techniques for now to map profile. SIMS yields a chemical doping profile via ion sputtering process and owns a better resolution, whereas ECV and SRP produce an electrical doping profile detecting free carriers in microelectronic devices. The major difference between electrical and chemical doping profiles is at heavily doped regions greater than 1020 atoms/cm3. At the profile region over the solubility limit, inactive dopants induce a flat plateau and detected by electrical measurements only. Destructive techniques are usually designed as stand-alone systems to study impurities. For an in-situ process control purpose, non-contact methods, such as ellipsometry and non-contact capacitance voltage (CV) techniques are current under development. In this theses work, terahertz time domain spectroscopy (THz-TDS) is utilized to achieve electrical doping profile in both destructive and non-contact manners. In recent years the Terahertz group at Rochester Institute Technology developed several techniques that use terahertz pulses to non-destructively map doping profiles. In this thesis, we study a destructive but potentially higher resolution version of the terahertz based approach to map the profile of activated dopants and augment the non-destructive approaches already developed. The basic idea of the profile mapping approach developed in this MS thesis is to anodize, and thus oxidize to silicon dioxide, thin layers (down to below 10 nm) of the wafer with the doping profile to be mapped. Since the dopants atoms and any free carriers in the silicon oxide thin film are invisible to the terahertz probe this anodization step very effectively removes a ‘thin slice’ from the doping profile to be mapped. By iterating between anodization and terahertz measurements that detect only the ‘remaining’ non-oxidized portion of the doping profile one can re-construct the doping profile with significantly higher precision compared to what is possible by only a single non-destructive measurement of the un-anodized profile as used in the non-destructive version of our technique. In this MS thesis we explore all aspects of this anodization based variation of doping profile mapping using free space terahertz pulses. This includes a study of silicon dioxide thin film growth using a room temperature electrochemical oxidation process. Etching procedures providing the option to remove between successive anodization and terahertz measurement steps. THz-TDS measurements of successively anodized profiles will be compared with sheet resistance and SIMS measurements to benchmark and improve the new technique

State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths

Silicon-based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption - due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection at wavelengths above 1.1 μm, in recent years tremendous advances have been made in the field of all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths. By taking advantage of emerging materials and novel structures, these devices are becoming competitive with the more well-established technologies, and are opening new and intriguing perspectives. In this paper, a review of the state-of-the-art is presented. Devices based on defect-mediated absorption, two-photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared

Chip- and System-Level Reliability on SiC-based Power Modules

The blocking voltage, switching frequency and temperature tolerance of power devices have been greatly improved due to the revolution of wide bandgap (WBG) materials, such as silicon carbide (SiC) and gallium nitride (GaN). Owing to the development of SiC-based power devices, the power rating, operating voltage, and power density of power modules have been significantly improved. However, the reliability of SiC-based power modules has not been fully explored yet. Thus, this dissertation focuses on the chip- and system-level reliability on SiC-based power modules. For chip-level reliability, this work focuses on on-chip SiC ESD protection devices for SiC-based integrated circuits (ICs). In order to develop SiC ESD protection devices, SiC-based Ohmic contact and ion implantation have been studied. Nickel/Titanium/Aluminum (Ni/Ti/Al) metal stacks were deposited on SiC substrates to form Ohmic contact. Circular transfer length method (CTLM) structures were fabricated to characterize contact resistivity. Ion implantation was designed and simulated by Sentraurus technology computer aided design (TCAD) software. Secondary-ion mass spectrometry (SIMS) results show a good match with the simulation results. In addition, SiC ESD protection devices, such as N-type metal-oxide-semiconductor (NMOS), laterally diffused metal-oxide-semiconductor (LDMOS), high-voltage silicon controlled rectifier (HV-SCR) and low-voltage silicon controlled rectifier (LV-SCR), have been designed. Transmission line pulse (TLP) and very fast TLP (VF-TLP) measurements were carried out to characterize their ESD performance. The proposed SiC-based HV-SCR shows the highest failure current on TLP measurement and can be used as an area-efficient ESD protection device. On the other hand, for system-level reliability, this dissertation focuses on the galvanic isolation of high-temperature SiC power modules. Low temperature co-fired ceramics (LTCC) based high-temperature optocouplers were designed and fabricated as galvanic isolators. The LTCC-based high-temperature optocouplers show promising driving capability and steady response speed from 25 ºC to 250 ºC. In order to verify the performance of the high-temperature optocouplers at the system level, LTCC-based gate drivers that utilize the high-temperature optocouplers as galvanic isolators were designed and integrated into a high-temperature SiC-based power module. Finally, the high-temperature power module with integrated LTCC-based gate drivers was characterized by DPTs from 25 ºC to 200 ºC. The power module shows reliable switching performance at elevated temperatures

Chip- and System-Level Reliability on SiC-based Power Modules

The blocking voltage, switching frequency and temperature tolerance of power devices have been greatly improved due to the revolution of wide bandgap (WBG) materials, such as silicon carbide (SiC) and gallium nitride (GaN). Owing to the development of SiC-based power devices, the power rating, operating voltage, and power density of power modules have been significantly improved. However, the reliability of SiC-based power modules has not been fully explored yet. Thus, this dissertation focuses on the chip- and system-level reliability on SiC-based power modules. For chip-level reliability, this work focuses on on-chip SiC ESD protection devices for SiC-based integrated circuits (ICs). In order to develop SiC ESD protection devices, SiC-based Ohmic contact and ion implantation have been studied. Nickel/Titanium/Aluminum (Ni/Ti/Al) metal stacks were deposited on SiC substrates to form Ohmic contact. Circular transfer length method (CTLM) structures were fabricated to characterize contact resistivity. Ion implantation was designed and simulated by Sentraurus technology computer aided design (TCAD) software. Secondary-ion mass spectrometry (SIMS) results show a good match with the simulation results. In addition, SiC ESD protection devices, such as N-type metal-oxide-semiconductor (NMOS), laterally diffused metal-oxide-semiconductor (LDMOS), high-voltage silicon controlled rectifier (HV-SCR) and low-voltage silicon controlled rectifier (LV-SCR), have been designed. Transmission line pulse (TLP) and very fast TLP (VF-TLP) measurements were carried out to characterize their ESD performance. The proposed SiC-based HV-SCR shows the highest failure current on TLP measurement and can be used as an area-efficient ESD protection device. On the other hand, for system-level reliability, this dissertation focuses on the galvanic isolation of high-temperature SiC power modules. Low temperature co-fired ceramics (LTCC) based high-temperature optocouplers were designed and fabricated as galvanic isolators. The LTCC-based high-temperature optocouplers show promising driving capability and steady response speed from 25 ºC to 250 ºC. In order to verify the performance of the high-temperature optocouplers at the system level, LTCC-based gate drivers that utilize the high-temperature optocouplers as galvanic isolators were designed and integrated into a high-temperature SiC-based power module. Finally, the high-temperature power module with integrated LTCC-based gate drivers was characterized by DPTs from 25 ºC to 200 ºC. The power module shows reliable switching performance at elevated temperatures

Advanced emitters and detectors for terahertz time-domain spectroscopy

The idea of terahertz-time-domain spectroscopy (THz-TDS) is to exploit a single cycle, spectrally broad THz radiation pulse to gain insight into the response of matter. Photoconductive devices and nonlinear crystals are utilized in both the generation as well as the coherent detection of THz radiation. The relatively high cost and the complexity of commonly used titanium-sapphire lasers hinder a more widespread use of pulsed THz systems for commercial applications. Er-doped femtosecond fiber lasers operating at 1.55 μm could offer a viable alternative. In this thesis nonlinear crystals and photoconductive emitters are discussed for excitation in the near infrared (NIR) window of between 800 nm to 1550 nm. The main focus of this thesis is a detailed study of substrate materials for an interdigitated photoconductive antenna. Photoconductive antennas with microstructured electrodes provide high electric acceleration fields at moderate voltages because of small electrode separations. The scalability of these devices allows for large active areas in the mm^2 range, which are sufficient for excitation at large optical powers. In comparison with conventional emitter structures, these antennas have more favourable characteristics regarding THz power, spectral properties, and ease of handling. Depending on the utilized substrate material, photoconductive antennas can then be operated using different excitation wavelengths. By employing substrates with short carrier trapping times these antennas can be operated as THz-detectors. Moreover the design of electrode structures for generating radially and azimuthally polarized THz waves are presented. A second topic deals with the signal analysis and signal interpretation of THz pulses transmitted through several material systems. These experiments show the potential for tomographic and spectroscopic applications. The third part deals with THz emission by frequency mixing in nonlinear organic and inorganic crystals. Hereby the focus is on polaritonic phase matching in GaAs. Furthermore, indications of THz tunability by the excitation wavelength were found by utilizing waveguide structures. However, the observed tuning range is much lower then theoretically predicted. Specific reasons for this are discussed

Flexible Organic Electronics for Biosignal Amplification

Organic electronics based on conjugated polymers (CPs) are being explored as active semiconductor materials in the bioelectronics field. CPs can be embedded in flexible substrates to obtain a passive conductive device or employed in active devices such as organic electrochemical transistors (OECTs). Their potential use in the clinic hinges on their development into advanced bioelectronic circuitry for higher functionalities. Furthermore, their translation into the clinic will require their sterilization without degrading their physical and electronic properties, as well as consideration of self-powering functionalities. The thesis objective was to address these challenges by 1) developing a complementary logic circuit based on polyaniline (PANI) as the active channel, 2) investigating the effect of sterilization methods on PANI properties, and 3) exploring its optoelectronic properties towards a flexible wireless optoelectronic device. In this thesis, a complementary logic circuit was built from a single PANI based active channel OECT, exhibiting a gain of 7.2. It was also engineered into a flexible bioelectronic circuit that operates in aqueous electrolyte. An in vivo study was performed on PANI-patches sterilized by ethylene oxide and gamma radiation. Results showed that the patches maintained their mechanical and conductive nature after sterilization, and the inflammatory response after implantation significantly diminished by week 4. The optical properties of PANI were also exploited; the PANI-patch showed photoconductivity when illuminated with visible light. In conclusion, the electrochemical properties of PANI were exploited to build a new flexible complementary circuit featuring two identical OECTs. This drastically simplifies the manufacturing process eliminating the need for materials with matching performance. Sterilized patches maintained their mechanical and electrical properties and induced a minimal inflammatory response. Additionally, the demonstrated photo-induced electrical response of the PANI-patch opens the way to develop a wireless bioelectronic for cellular and tissue stimulation. This work extends the capabilities of conjugated polymers towards new and more complex architectures for bioelectronic devices