Review: far-infrared instrumentation and technological development for the next decade

Far-infrared astronomy has advanced rapidly since its inception in the late 1950s, driven by a maturing technology base and an expanding community of researchers. This advancement has shown that observations at far-infrared wavelengths are important in nearly all areas of astrophysics, from the search for habitable planets and the origin of life to the earliest stages of galaxy assembly in the first few hundred million years of cosmic history. The combination of a still-developing portfolio of technologies, particularly in the field of detectors, and a widening ensemble of platforms within which these technologies can be deployed, means that far-infrared astronomy holds the potential for paradigm-shifting advances over the next decade. We examine the current and future far-infrared observing platforms, including ground-based, suborbital, and space-based facilities, and discuss the technology development pathways that will enable and enhance these platforms to best address the challenges facing far-infrared astronomy in the 21st century

Tunnel field-effect transistors for sensitive terahertz detection

The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high-responsivity (> 4 kV/W) and low-noise (0.2 pW/$\sqrt{\mathrm{Hz}}$}) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor

SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS FOR LARGE-SCALE LOW-POWER CRYOGENIC SENSING SYSTEMS

Cryogenic low noise amplifiers (LNAs) are one of the key components in many emerging applications such as radio astronomy or quantum computing in which a weak incoming signal needs to be read out. There have been extensive studies on the feasibility of leveraging silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) to implement cryogenic LNAs in the past. The deployment of such LNAs in the future large-scale systems in radio astronomy or quantum computing is contingent upon the possibility of developing LNAs with reduced DC power dissipation to enable the cooling of a large number of array elements inside a cryogenic cooler. In this dissertation, we focus on the cryogenic operation of SiGe HBTs at reduced supply voltages for the implementation of ultra low- power LNAs and their applications for scalable receiver systems. In addition, the limitations of the SiGe HBT cryogenic models for the operation at high current densities are investigated for the implementation of modern high speed SiGe HBT circuits

Silicon Germanium BiCMOS Integrated Circuits for Scalable Cryogenic Sensing Applications

This dissertation is focused on an investigation of BiCMOS cryogenic low noise amplifiers (LNAs) based on Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for simultaneous low noise and low power design and also taking advantage of CMOS circuitry for adding flexibility to the LNA design. Cryogenic LNAs\u27 scalability challenges are discussed and addressed in the dissertation. To achieve that, first, HBTs of three state-of-the-art technologies are characterized and modeled at cryogenic temperature. It is shown that SiGe HBT provides a promising compromise of noise temperature, power consumption, and bandwidth. Moreover, a scalable on-chip approach is proposed and verified for biasing of SiGe HBTs based LNAs. Finally, the first cryogenic re-configurable LNA is designed, implemented, and measured

1-D broadside-radiating leaky-wave antenna based on a numerically synthesized impedance surface

A newly-developed deterministic numerical technique for the automated design of metasurface antennas is applied here for the first time to the design of a 1-D printed Leaky-Wave Antenna (LWA) for broadside radiation. The surface impedance synthesis process does not require any a priori knowledge on the impedance pattern, and starts from a mask constraint on the desired far-field and practical bounds on the unit cell impedance values. The designed reactance surface for broadside radiation exhibits a non conventional patterning; this highlights the merit of using an automated design process for a design well known to be challenging for analytical methods. The antenna is physically implemented with an array of metal strips with varying gap widths and simulation results show very good agreement with the predicted performance

Beam scanning by liquid-crystal biasing in a modified SIW structure

A fixed-frequency beam-scanning 1D antenna based on Liquid Crystals (LCs) is designed for application in 2D scanning with lateral alignment. The 2D array environment imposes full decoupling of adjacent 1D antennas, which often conflicts with the LC requirement of DC biasing: the proposed design accommodates both. The LC medium is placed inside a Substrate Integrated Waveguide (SIW) modified to work as a Groove Gap Waveguide, with radiating slots etched on the upper broad wall, that radiates as a Leaky-Wave Antenna (LWA). This allows effective application of the DC bias voltage needed for tuning the LCs. At the same time, the RF field remains laterally confined, enabling the possibility to lay several antennas in parallel and achieve 2D beam scanning. The design is validated by simulation employing the actual properties of a commercial LC medium

Review: far-infrared instrumentation and technological development for the next decade

Far-infrared astronomy has advanced rapidly since its inception in the late 1950s, driven by a maturing technology base and an expanding community of researchers. This advancement has shown that observations at far-infrared wavelengths are important in nearly all areas of astrophysics, from the search for habitable planets and the origin of life to the earliest stages of galaxy assembly in the first few hundred million years of cosmic history. The combination of a still-developing portfolio of technologies, particularly in the field of detectors, and a widening ensemble of platforms within which these technologies can be deployed, means that far-infrared astronomy holds the potential for paradigm-shifting advances over the next decade. We examine the current and future far-infrared observing platforms, including ground-based, suborbital, and space-based facilities, and discuss the technology development pathways that will enable and enhance these platforms to best address the challenges facing far-infrared astronomy in the 21st century