Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm

3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm 3T1D memory cells present significant tolerance to high levels of device parameter fluctuation. Moreover, we have observed that when variability is considered the write access transistor becomes a significant detrimental element on the 3T1D cell performance. Furthermore, resizing and temperature control have been presented as some valid strategies in order to mitigate the 3T1D cell variability.Peer ReviewedPostprint (author's final draft

Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation

Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines the minimum-energy operation point of 2T and 3T1D e-DRAM gain cells at the 32-nm technology node with different design points: up-sizing transistors, using high- V th transistors, read/write wordline assists; as well as operating conditions (i.e., temperature). First, the e-DRAM cells are evaluated without considering any process variations. Then, a full-factorial statistical analysis of e-DRAM cells is performed in the presence of threshold voltage variations and the effect of upsizing on mean MEP is reported. Finally, it is shown that the product of the read and write lengths provides a knob to tradeoff energy-efficiency for reliable MEP energy operation.Peer ReviewedPostprint (author's final draft

Review on suitable eDRAM configurations for next nano-metric electronics era

We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform their memory cell counterparts, we explored different technological proposals and operational regimes where it can be located. The best memory cell performance is observed for the 3T1D-eDRAM cell when it is based on FinFET devices. Both device variability and SEU appear as key reliability issues for memory cells at sub-22nm technology node.Peer ReviewedPostprint (author's final draft

Mitigation strategies of the variability in 3T1D cell memories scaled beyond 22nm

Best DCIS Paper Award 20123T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability. In this contribution, we have shown that 22nm 3T1D memory cells present significant tolerance to high levels of device parameter fluctuation. Moreover, we have observed that the variability of the write access transistor has turn into the more detrimental device for the 3T1D cell performance. Furthermore, resizing and temperature control have been presented as some strategies to mitigate the cell variability.Peer ReviewedAward-winningPreprin

High-Speed Electronic Memories and Memory Subsystems

Memories have played a vital role in embedded system architectures over the years. A need for high-speed memory to be embedded with state-of-the-art embedded system to improve its performance is essential. This chapter focuses on the development of high-speed memories. The traditional static random access memory (SRAM) is first analyzed with its different variant in terms of static noise margin (SNM); these cells occupy a larger area as compared to dynamic random access memory (DRAM) cell, and hence, a comprehensive analysis of DRAM cell is then carried out in terms of power consumption, read and write access time, and retention time. A faster new design of P-3T1D DRAM cell is proposed which has about 50% faster reading time as compared to the traditional three-transistor DRAM cell. A complete layout of the structure is drawn along with its implementation in a practical 16-bit memory subsystem

vPROBE: Variation aware post-silicon power/performance binning using embedded 3T1D cells

In this paper, we present an on-die post-silicon binning methodology that takes into account the effect of static and dynamic variations and categorizes every processor based on power/performance.The proposed scheme is composed of a discretization hardware that exploits the delay/leakage dependence on variability sources characteristic for categorizationPreprin

Reliability in the face of variability in nanometer embedded memories

In this thesis, we have investigated the impact of parametric variations on the behaviour of one performance-critical processor structure - embedded memories. As variations manifest as a spread in power and performance, as a first step, we propose a novel modeling methodology that helps evaluate the impact of circuit-level optimizations on architecture-level design choices. Choices made at the design-stage ensure conflicting requirements from higher-levels are decoupled. We then complement such design-time optimizations with a runtime mechanism that takes advantage of adaptive body-biasing to lower power whilst improving performance in the presence of variability. Our proposal uses a novel fully-digital variation tracking hardware using embedded DRAM (eDRAM) cells to monitor run-time changes in cache latency and leakage. A special fine-grain body-bias generator uses the measurements to generate an optimal body-bias that is needed to meet the required yield targets. A novel variation-tolerant and soft-error hardened eDRAM cell is also proposed as an alternate candidate for replacing existing SRAM-based designs in latency critical memory structures. In the ultra low-power domain where reliable operation is limited by the minimum voltage of operation (Vddmin), we analyse the impact of failures on cache functional margin and functional yield. Towards this end, we have developed a fully automated tool (INFORMER) capable of estimating memory-wide metrics such as power, performance and yield accurately and rapidly. Using the developed tool, we then evaluate the #effectiveness of a new class of hybrid techniques in improving cache yield through failure prevention and correction. Having a holistic perspective of memory-wide metrics helps us arrive at design-choices optimized simultaneously for multiple metrics needed for maintaining lifetime requirements

Dynamic fine-grain body biasing of caches with latency and leakage 3T1D-based monitors

In this paper, we propose a dynamically tunable fine-grain body biasing mechanism to reduce active & standby leakage power in caches under process variations.Preprin

Process variability in sub-16nm bulk CMOS technology

The document is part of deliverable D3.6 of the TRAMS Project (EU FP7 248789), of public nature, and shows and justifies the levels of variability used in the research project for sub-18nm bulk CMOS technologies.Postprint (published version

Cache memory design in the FinFET era

The major problem in the future technology scaling is the variations in process parameters that are interpreted as imperfections in the development process. Moreover, devices are more sensitive to the environmental changes of temperature and supply volt- age as well as to ageing. All these influences are manifested in the integrated circuits as increased power consumption, reduced maximal operating frequency and increased number of failures. These effects have been partially overcome with the introduction of the FinFET technology which have solved the problem of variability caused by Random Dopant Fluctuations. However, in the next ten years channel length is projected to shrink to 10nm where the variability source generated by Line Edge Roughness will dominate, and its effects on the threshold voltage variations will become critical. The embedded memories with their cells as the basic building unit are the most prone to these effects due to their the smallest dimensions. Because of that, memories should be designed with particular care in order to make possible further technology scaling. This thesis explores upcoming 10nm FinFETs and the existing issues in the cache memory design with this technology. More- over, it tries to present some original and novel techniques on the different level of design abstraction for mitigating the effects of process and environmental variability. At first original method for simulating variability of Tri-Gate Fin- FETs is presented using conventional HSPICE simulation environment and BSIM-CMG model cards. When that is accomplished, thorough characterisation of traditional SRAM cell circuits (6T and 8T) is performed. Possibility of using Independent Gate FinFETs for increasing cell stability has been explored, also. Gain Cells appeared in the recent past as an attractive alternative for in the cache memory design. This thesis partially explores this idea by presenting and performing detailed circuit analysis of the dynamic 3T gain cell for 10nm FinFETs. At the top of this work, thesis shows one micro-architecture optimisation of high-speed cache when it is implemented by 3T gain cells. We show how the cache coherency states can be used in order to reduce refresh energy of the memory as well as reduce memory ageing.El principal problema de l'escalat la tecnologia són les variacions en els paràmetres de disseny (imperfeccions) durant procés de fabricació. D'altra banda, els dispositius també són més sensibles als canvis ambientals de temperatura, la tensió d'alimentació, així com l'envelliment. Totes aquestes influències es manifesten en els circuits integrats com l'augment de consum d'energia, la reducció de la freqüència d'operació màxima i l'augment del nombre de xips descartats. Aquests efectes s'han superat parcialment amb la introducció de la tecnologia FinFET que ha resolt el problema de la variabilitat causada per les fluctuacions de dopants aleatòries. No obstant això, en els propers deu anys, l'ample del canal es preveu que es reduirà a 10nm, on la font de la variabilitat generada per les rugositats de les línies de material dominarà, i els seu efecte en les variacions de voltatge llindar augmentarà. Les memòries encastades amb les seves cel·les com la unitat bàsica de construcció són les més propenses a sofrir aquests efectes a causa de les seves dimensions més petites. A causa d'això, cal dissenyar les memòries amb una especial cura per tal de fer possible l'escalat de la tecnologia. Aquesta tesi explora la tecnologia de FinFETs de 10nm i els problemes existents en el disseny de memòries amb aquesta tecnologia. A més a més, presentem noves tècniques originals sobre diferents nivells d'abstracció del disseny per a la mitigació dels efectes les variacions tan de procés com ambientals. En primer lloc, presentem un mètode original per a la simulació de la variabilitat de Tri-Gate FinFETs usant entorn de simulació HSPICE convencional i models de tecnologia BSIMCMG. Després, es realitza la caracterització completa dels circuits de cel·les SRAM tradicionals (6T i 8T) conjuntament amb l'ús de Gate-independent FinFETs per augmentar l'estabilitat de la cèl·lula