Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm

3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm 3T1D memory cells present significant tolerance to high levels of device parameter fluctuation. Moreover, we have observed that when variability is considered the write access transistor becomes a significant detrimental element on the 3T1D cell performance. Furthermore, resizing and temperature control have been presented as some valid strategies in order to mitigate the 3T1D cell variability.Peer ReviewedPostprint (author's final draft

HPC Accelerators with 3D Memory

Artículo invitado, publicado en las actas del congreso por IEEE Society Press. Páginas 320 a 328. ISBN: 978-1-5090-3593-9.DOI 10.1109/CSE-EUC-DCABES-2016.203After a decade evolving in the High Performance Computing arena, GPU-equipped supercomputers have con- quered the top500 and green500 lists, providing us unprecedented levels of computational power and memory bandwidth. This year, major vendors have introduced new accelerators based on 3D memory, like Xeon Phi Knights Landing by Intel and Pascal architecture by Nvidia. This paper reviews hardware features of those new HPC accelerators and unveils potential performance for scientific applications, with an emphasis on Hybrid Memory Cube (HMC) and High Bandwidth Memory (HBM) used by commercial products according to roadmaps already announced.Universidad de Málaga. Campus de Excelencia Internacional Andalucia Tec

Modelling and simulation of advanced semiconductor devices

This paper presents a modelling and simulation study of advanced semiconductor devices. Different Technology Computer Aided Design approaches and models, used in nowadays research are described here. Our discussions are based on numerous theoretical approaches starting from first principle methods and continuing with discussions based on more well stablished methods such as Drift-Diffusion, Monte Carlo and Non-Equilibrium Green’s Function formalism