Optocoupler Integration of LTCC-based Gate Driver in a SiC Power Module

The growing demand for electrical energy in today’s industrialized economy has driven the need for innovative approaches to meet diverse application requirements. Notably, advancements have been made in the field of power electronic systems, as reliable power electronic converters are essential for managing multiple power sources and loads. However, the development of these systems poses challenges related to power device switching speed, system weight and size, and power losses. The integration of a gate driver into a SiC power module offers a solution to many of these challenges, thereby driving the advancement of electrical power density expansion. An LTCC-based gate driver with an LTCC-based optical isolator was developed and integrated into a fabricated 1.2kV SiC power module. This development was done specifically for high temperature applications as part of a wider research on the reliability of the integrated power module at higher temperatures. Therefore, this high temperature gate driver integrated SiC power module was tested from 25oC to 200oC. Double pulse testing of the fabricated integrated SiC power module was done to characterize the switching performance of the power module. The test results indicate a minimal voltage overshoot of approximately 3.5V during both the turn-on and turn-off periods. Additionally, the current overshoot ranges from ~5A to ~8A as the temperature increases from 25oC to 200oC. The results show good switching performance resulting in minimal losses over higher temperatures. Therefore, with these results, the integrated SiC power module can enhance better power density, and lower losses even in high temperature applications

Optocoupler Integration of LTCC-based Gate Driver in a SiC Power Module

The growing demand for electrical energy in today’s industrialized economy has driven the need for innovative approaches to meet diverse application requirements. Notably, advancements have been made in the field of power electronic systems, as reliable power electronic converters are essential for managing multiple power sources and loads. However, the development of these systems poses challenges related to power device switching speed, system weight and size, and power losses. The integration of a gate driver into a SiC power module offers a solution to many of these challenges, thereby driving the advancement of electrical power density expansion. An LTCC-based gate driver with an LTCC-based optical isolator was developed and integrated into a fabricated 1.2kV SiC power module. This development was done specifically for high temperature applications as part of a wider research on the reliability of the integrated power module at higher temperatures. Therefore, this high temperature gate driver integrated SiC power module was tested from 25oC to 200oC. Double pulse testing of the fabricated integrated SiC power module was done to characterize the switching performance of the power module. The test results indicate a minimal voltage overshoot of approximately 3.5V during both the turn-on and turn-off periods. Additionally, the current overshoot ranges from ~5A to ~8A as the temperature increases from 25oC to 200oC. The results show good switching performance resulting in minimal losses over higher temperatures. Therefore, with these results, the integrated SiC power module can enhance better power density, and lower losses even in high temperature applications

The Development of Novel Interconnection Technologies for 3D Packaging of Wire Bondless Silicon Carbide Power Modules

This dissertation advances the cause for the 3D packaging and integration of silicon carbide power modules. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were investigated, and the concept for a novel SiC power module was discussed. This highly-integrated SiC power module was assessed for feasibility, with a focus on achieving ultralow parasitic inductances in the critical switching loops. This will enable higher switching frequencies, leading to a reduction in the size of the passive devices in the system and resulting in systems with lower weight and volume. The proposed concept yielded an order-of-magnitude reduction in system parasitics, alongside the possibility of a compact system integration. The technological barriers to realizing these concepts were identified, and solutions for novel interconnection schemes were proposed and evaluated. A novel sintered silver preform was developed to facilitate flip-chip interconnections for a bare-die power device while operating in a high ambient temperature. The preform was demonstrated to have 3.75× more bonding strength than a conventional sintered silver bond and passed rigorous thermal shock tests. A chip-scale and flip-chip capable power device was also developed. The novel package combined the ease of assembly of a discrete device with a performance exceeding a wire bonded module. It occupied a 14× smaller footprint than a discrete device, and offered power loop inductances which were less than a third of a conventional wire bonded module. A detailed manufacturing process flow and qualification is included in this dissertation. These novel devices were implemented in various electrical systems—a discrete Schottky barrier diode package, a half-bridge module with external gate drive, and finally a half-bridge with integrated gate driver in-module. The results of these investigations have been reported and their benefits assessed. The wire bondless modules showed \u3c 5% overshoot under all test conditions. No observable detrimental effects due to dv/dt were observed for any of the modules even under aggressive voltage slew rates of 20-25 V/ns

A Double-Sided Stack Low-Inductance Wire-Bondless SiC Power Module with a Ceramic Interposer

The objective of this dissertation research is to develop a novel three-dimensional (3-D) wire bondless power module package for silicon carbide (SiC) power devices to achieve a low parasitic inductance and an improved thermal performance. A half-bridge module consisting of 900-V SiC MOSFETs is realized to minimize stray parasitic inductance as well as to provide both vertical and horizontal cooling paths to maximize heat dissipation. The proposed 3-D power module package was designed, simulated, fabricated and tested. In this module, low temperature co-fired ceramic (LTCC) substrate with vias is utilized as an interposer of which both top and bottom sides are used as die attachment surfaces, the SiC MOSFET bare dies are flip-chip attached on the LTCC interposer using nickel-plated copper balls, high horizontally thermal conductive material is integrated into the LTCC interposer to improve its thermal dissipation capability. Hence, the LTCC interposer provides both electrical and thermal routing and the nickel-plated copper balls replace bond wires in conventional planar power module as the electrical interconnections for the SiC power devices. On the other side, direct bond copper (DBC) substrate are used at both top and bottom sides of the 3-D module to achieve electrical path for SiC devices and double-sided cooling. As a result, 3D power routing is achieved to reduce stray inductance, and both vertical and lateral paths are utilized to spread heat generated by the power devices in this compact module architecture. Electrical simulation was performed to extract the parasitic inductances in the 3-D package and compared to other reported module packages. Low loop parasitic inductance of 4.5nH at a frequency of 1MHz is achieved after optimization. Thermal and thermo-mechanical simulations were also conducted to evaluate the thermal performance and mechanical stress of the proposed module structure. The fabrication process flow of the 3-D wire bondless module is developed and presented. The fabricated half-bridge module was evaluated experimentally by double-pulse test and thermal cycling test. Significant reduction in voltage overshoot and ringing was observed during the double-pulse test, and the module shows no degradation after thermal cycling test. To push the double-sided wire-bondless module to higher voltage application, a 3.3-kV SiC double-sided wire-bondless common source module was designed, fabricated, and tested. Electric field simulations were performed considering the associated challenge of increased electric field strength in the higher-voltage wire-bondless module. High voltage blocking test was added to evaluate the high voltage operation capability as well

Converter- and Module-level Packaging for High Power Density and High Efficiency Power Conversion

Advancements in the converter- and module-level packaging will be the key for the development of the emerging high-power, high power-density, high-eciency power conversion applications, such as traction, shipboards, more-electric-aircraft, and locomotive. Wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFET attract much attention in these applications for their fast switching speeds, resulting in low loss and a consequent possibility for high switching frequency to increase the power density. However, for high-current, high power implementations, WBG devices are still available in small die sizes. Multiple SiC devices need to be connected in parallel to replace a large IGBT die. It is challenging to realize high-switching-frequency and low loss with a lot of parallel devices due to the inherent parameter dierences, which lead to unbalanced dynamic current sharing resulting in unequal temperature distribution and overstress. Apart from the technical challenges, the price of SiC modules is another roadblock for its widespread application. The paralleling of a large number of SiC chips in the module to handle high current increases the module cost. Hence, this work proposes a Si-IGBT and SiC-MOSFET-based hybrid switch solution. For a converter-level packaging, the device technology, available device package, and orientation of the pins are the essential governing factors. This work addresses the converter-level packaging, which is referred to as a power electronics building block, of the proposed hybrid switch, combining discrete packages and frame-based modules for the devices and a singlephase three-level T-type topology. The primary optimization objective for converter-level packaging includes low inductance busbar design, high eciency, and high specic and volumetric power density. Overall implementation is not trivial; however, this work achieves an optimum design compared to the state-of-the-art. The module-level packaging challenges are dependent on the type of device technology and topology. Reducing the parasitic inductances, capacitances, and the junction to case thermal resistance are the optimization objectives in module packaging. Given the intended application of the module, achieving a high-reliability module is also essential. This work includes a hybrid switch-based power module addressing the challenges of WBG module-level packaging and challenges specic to the hybrid switch. The availability of engineering samples of SiC MOSFETs with voltage ratings above 10 kV and commercialization in the future drive the module-level packaging of high voltage devices. High voltage power modules will support the development of future solid-state circuit breakers, transformers, and power conversion applications in shipboards and rolling stocks. The availability of these modules can eliminate the necessity of multilevel topologies. This work investigates and demonstrates the module-level packaging of HV (10-15 kV) SiC MOSFETs

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified

A Highly Integrated Gate Driver with 100% Duty Cycle Capability and High Output Current Drive for Wide-Bandgap Power Switches in Extreme Environments

High-temperature integrated circuits fill a need in applications where there are obvious benefits to reduced thermal management or where circuitry is placed away from temperature extremes. Examples of these applications include aerospace, automotive, power generation, and well-logging. This work focuses on the automotive applications, in which the growing demand for hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), and fuel cell vehicles (FCVs) has increased the need for high-temperature electronics that can operate at the extreme ambient temperatures that exist under the hood, which can be in excess of 150°C. Silicon carbide (SiC) and other wide-bandgap power switches that can function at these temperature extremes are now entering the market. To take full advantage of their potential, high-temperature capable circuits that can also operate in these environments are required. This work presents a high-temperature, high-voltage, silicon-on-insulator (SOI) based gate driver designed for SiC and other wide-bandgap power switches for DC-DC converters and traction drives in HEVs. This highly integrated gate driver integrated circuit (IC) has been designed to operate at ambient temperatures up to 200ºC, have a high on-chip drive current, require a minimum complement of off-chip components, and be capable of operating at a 100% high-side duty cycle. Successful operation of the gate driver circuit across temperature with minimal or no thermal management will help to achieve higher power-to-weight and power-to-volume ratios for the power electronics modules in HEVs and, therefore, higher efficiency