Utilisation of microsystems technology in radio frequency and microwave applications

The market trends of the rapidly growing communication systems require new product architectures and services that are only realisable by utilising technologies beyond that of planar integrated circuits. Microsystems technology (MST) is one such technology which can revolutionise radio frequency (RF) and microwave applications. This article discusses the enabling potential of the MST to meet the stringent requirements of modern communication systems. RF MST fabrication technologies and actuation mechanisms empower conventional processes by alleviating the substrate effects on passive devices and provide product designers with high quality versatile microscale components which can facilitate system integration and lead to novel architectures with enhanced robustness and reduced power consumption. An insight on the variety of components that can be fabricated using the MST is given, emphasizing their excellent electrical performance and versatility. Research issues that need to be addressed are also discussed. Finally, this article discusses the main approaches for integrating MST devices in RF and microwave applications together with the difficulties that need to be overcome in order to make such devices readily available for volume-production.peer-reviewe

Nonlinear actuation model for lateral electrostatically-actuated DC-contact RF MEMS series switches.

In this work, a nonlinear model to predict actuation characteristics in lateral electrostatically-actuated DC-contact MEMS switches is proposed. In this case a parallel-plate approximation cannot be applied. The model is based on the equilibrium equation for an elastic beam. It is demonstrated that the contribution of fringing fields is essential. The model relies on finite-difference discretization of the structures, applying boundary conditions and is solved with a Gauss- Seidel relaxation iteration scheme. Its usefulness is demonstrated in a series MEMS switch with lateral interdigital electrostatic actuation.Peer Reviewe

RF-MEMS for high-performance and widely reconfigurable passive components – A review with focus on future telecommunications, Internet of Things (IoT) and 5G applications

Abstract Since its first discussions in literature during late '90s, RF-MEMS technology (i.e. Radio Frequency MicroElectroMechanical-Systems) has been showing uncommon potential in the realisation of high-performance and widely reconfigurable RF passives for radio and telecommunication systems. Nevertheless, against the most confident forecasts sparkling around the successful exploitation of RF-MEMS technology in mass-market applications, with the mobile phone segment first in line, already commencing from the earliest years of the 2000s, the first design wins for MEMS-based RF passives have started to be announced just in late 2014. Beyond the disappointment of all the most flattering market forecasts and, on the other hand, the effective employment of RF-MEMS in niche applications (like in very specific space and defence scenarios), there were crucial aspects, not fully considered since the beginning, that impaired the success of such a technology in large-market and consumer applications. Quite unexpectedly, the context has changed rather significantly in recent years. The smartphones market segment started to generate a factual need for highly reconfigurable and high-performance RF passive networks, and this circumstance is increasing the momentum of RF-MEMS technology that was expected to take place more than one decade ago. On a broader landscape, the Internet of Things (IoT) and the even wider paradigm of the Internet of Everything (IoE) seem to be potential fields of exploitation for high-performance and highly reconfigurable passive components in RF-MEMS technology. This work frames the current state of RF-MEMS market exploitation, analysing the main reasons impairing in past years the proper employment of Microsystem technology based RF passive components. Moreover, highlights on further expansion of RF-MEMS solutions in mobile and telecommunication systems will be briefly provided and discussed

Design and simulation of a low-actuation-voltage MEMS switch

This paper presents a low-actuation-voltage micro-electro-mechanical system (MEMS) capacitive shunt switch which has a very large bandwidth (4 GHz to 24 GHz). In this work, the isolation of MEMS switch is improved by adding two short high impedance transmission lines at the beginning and end of a coplanar waveguide (CPW). Simulating the switch demonstrates that a return loss (S11) is less than -26 dB for the entire frequency band, and perfect matching at 20 GHz in upstate position. A ramp dual pulse driver is also designed for reducing the capacitive charge injection for considering the reliability of the switch. The simulation results show that the shifting of voltage due to the capacitive charge is reduced by more than 35% of the initial value. Finally, the dynamic behavior of the MEMS switch is simulated by modal analysis and using CoventorWare to calculate the natural frequencies of the switch and its mode shapes. The switching ON and OFF time are 4.48 and 2.43 μs, respectively, with an actuation voltage of less than 15 V

Modeling and characterization of non-ideal effects in high-performance RF MEMS tuners

The emerging standards for the next-generation wireless communication system demand for multi-band RF front-ends. Reconfigurable RF devices based on MEMS technology have emerged with the potential to significantly reduce the system complexity and cost. Robust operation of RF MEMS tuners under the non-ideal effects due to fabrication uncertainties and environmental variations is critical in achieving reliable RF MEMS reconfigurable devices. Therefore, it is essential to model and characterize these non-ideal effects, and further to alleviate these non-ideal effects by design optimization.^ In this dissertation, the effects of non-perfect anchor support, residual stress, and temperature sensibility of MEMS tuners have been studied. The anchor supports of MEMS beams, which are widely used as tunable components, are often far from the ideally assumed built-in or step-up conditions. An equation-based nonlinear model for inclined supports in non-flat fixed-fixed beams has been developed and validated by experimental results. Residual stress developed during the fabrication presents the major challenges in developing reliable MEMS tuners. An efficient extraction method for in-plane residual stress has been proposed using a single beam test structure. This method has been demonstrated by wafer-scale measurements of electrostatically actuated beams. The statistic and spatial distribution of extracted residual stresses on a quarter wafer is presented, and the accuracy of this method is evaluated by uncertainty analysis. With the awareness the residual stress effects, the design optimization has been conducted for designing stress-tolerant micro-corrugated diaphragm tuners used in tunable cavity resonators/filters. Furthermore, the temperature sensitivity issue results from the mismatch of material properties between the structure material and substrate has been discussed and a thermally-stable RF MEMS tuner based on a nonuniform micro corrugated diaphragm has been proposed and experimentally validated over a wide temperature variation

A micromachined zipping variable capacitor

Micro-electro-mechanical systems (MEMS) have become ubiquitous in recent years and are found in a wide range of consumer products. At present, MEMS technology for radio-frequency (RF) applications is maturing steadily, and significant improvements have been demonstrated over solid-state components.A wide range of RF MEMS varactors have been fabricated in the last fifteen years. Despite demonstrating tuning ranges and quality factors that far surpass solid-state varactors, certain challenges remain. Firstly, it is difficult to scale up capacitance values while preserving a small device footprint. Secondly, many highly-tunable MEMS varactors include complex designs or process flows.In this dissertation, a new micromachined zipping variable capacitor suitable for application at 0.1 to 5 GHz is reported. The varactor features a tapered cantilever that zips incrementally onto a dielectric surface when actuated electrostatically by a pulldown electrode. Shaping the cantilever using a width function allows stable actuation and continuous capacitance tuning. Compared to existing MEMS varactors, this device has a simple design that can be implemented using a straightforward process flow. In addition, the zipping varactor is particularly suited for incorporating a highpermittivity dielectric, allowing the capacitance values and tuning range to be scaled up. This is important for portable consumer electronics where a small device footprint is attractive.Three different modelling approaches have been developed for zipping varactor design. A repeatable fabrication process has also been developed for varactors with a silicon dioxide dielectric. In proof-of-concept devices, the highest continuous tuning range is 400% (24 to 121 fF) and the measured quality factors are 123 and 69 (0.1 and 0.7 pF capacitance, respectively) at 2 GHz. The varactors have a compact design and fit within an area of 500 by 100 µm

A micromachined zipping variable capacitor

Micro-electro-mechanical systems (MEMS) have become ubiquitous in recent years and are found in a wide range of consumer products. At present, MEMS technology for radio-frequency (RF) applications is maturing steadily, and significant improvements have been demonstrated over solid-state components. A wide range of RF MEMS varactors have been fabricated in the last fifteen years. Despite demonstrating tuning ranges and quality factors that far surpass solid-state varactors, certain challenges remain. Firstly, it is difficult to scale up capacitance values while preserving a small device footprint. Secondly, many highly-tunable MEMS varactors include complex designs or process flows. In this dissertation, a new micromachined zipping variable capacitor suitable for application at 0.1 to 5 GHz is reported. The varactor features a tapered cantilever that zips incrementally onto a dielectric surface when actuated electrostatically by a pulldown electrode. Shaping the cantilever using a width function allows stable actuation and continuous capacitance tuning. Compared to existing MEMS varactors, this device has a simple design that can be implemented using a straightforward process flow. In addition, the zipping varactor is particularly suited for incorporating a highpermittivity dielectric, allowing the capacitance values and tuning range to be scaled up. This is important for portable consumer electronics where a small device footprint is attractive. Three different modelling approaches have been developed for zipping varactor design. A repeatable fabrication process has also been developed for varactors with a silicon dioxide dielectric. In proof-of-concept devices, the highest continuous tuning range is 400% (24 to 121 fF) and the measured quality factors are 123 and 69 (0.1 and 0.7 pF capacitance, respectively) at 2 GHz. The varactors have a compact design and fit within an area of 500 by 100 μm

SOI RF-MEMS Based Variable Attenuator for Millimeter-Wave Applications

The most-attractive feature of microelectromechanical systems (MEMS) technology is that it enables the integration of a whole system on a single chip, leading to positive effects on the performance, reliability and cost. MEMS has made it possible to design IC-compatible radio frequency (RF) devices for wireless and satellite communication systems. Recently, with the advent of 5G, there is a huge market pull towards millimeter-wave devices. Variable attenuators are widely employed for adjusting signal levels in high frequency equipment. RF circuits such as automatic gain control amplifiers, broadband vector modulators, full duplex wireless systems, and radar systems are some of the primary applications of variable attenuators. This thesis describes the development of a millimeter-wave RF MEMS-based variable attenuator implemented by monolithically integrating Coplanar Waveguide (CPW) based hybrid couplers with lateral MEMS varactors on a Silicon–on–Insulator (SOI) substrate. The MEMS varactor features a Chevron type electrothermal actuator that controls the lateral movement of a thick plate, allowing precise change in the capacitive loading on a CPW line leading to a change in isolation between input and output. Electrothermal actuators have been employed in the design instead of electrostatic ones because they can generate relatively larger in-line deflection and force within a small footprint. They also provide the advantage of easy integration with other electrical micro-systems on the same chip, since their fabrication process is compatible with general IC fabrication processes. The development of an efficient and reliable actuator has played an important role in the performance of the proposed design of MEMS variable attenuator. A Thermoreflectance (TR) imaging system is used to acquire the surface temperature profiles of the electrothermal actuator employed in the design, so as to study the temperature distribution, displacement and failure analysis of the Chevron actuator. The 60 GHz variable attenuator was developed using a custom fabrication process on an SOI substrate with a device footprint of 3.8 mm x 3.1 mm. The fabrication process has a high yield due to the high-aspect-ratio single-crystal-silicon structures, which are free from warping, pre-deformation and sticking during the wet etching process. The SOI wafer used has a high resistivity (HR) silicon (Si) handle layer that provides an excellent substrate material for RF communication devices at microwave and millimeter wave frequencies. This low-cost fabrication process provides the flexibility to extend this module and implement more complex RF signal conditioning functions. It is thus an appealing candidate for realizing a wide range of reconfigurable RF devices. The measured RF performance of the 60 GHz variable attenuator shows that the device exhibits attenuation levels (|S21|) ranging from 10 dB to 25 dB over a bandwidth of 4 GHz and a return loss of better than 20 dB. The thesis also presents the design and implementation of a MEMS-based impedance tuner on a Silicon-On-Insulator (SOI) substrate. The tuner is comprised of four varactors monolithically integrated with CPW lines. Chevron actuators control the lateral motion of capacitive thick plates used as contactless lateral MEMS varactors, achieving a capacitance range of 0.19 pF to 0.8 pF. The improvement of the Smith chart coverage is achieved by proper choice of the electrical lengths of the CPW lines and precise control of the lateral motion of the capacitive plates. The measured results demonstrate good impedance matching coverage, with an insertion loss of 2.9 dB. The devices presented in this thesis provide repeatable and reliable operation due to their robust, thick-silicon structures. Therefore, they exhibit relatively low residual stress and are free from stiction and micro-welding problems

A COMPREHENSIVE OVERVIEW OF RECENT DEVELOPMENTS IN RF-MEMS TECHNOLOGY-BASED HIGH-PERFORMANCE PASSIVE COMPONENTS FOR APPLICATIONS IN THE 5G AND FUTURE TELECOMMUNICATIONS SCENARIOS

The goal of this work is to provide an overview about the current development of radio-frequency microelectromechanical systems technology, with special attention towards those passive components bearing significant application potential in the currently developing 5G paradigm. Due to the required capabilities of such communication standard in terms of high data rates, extended allocated spectrum, use of massive MIMO (Multiple-Input-Multiple-Output) systems, beam steering and beam forming, the focus will be on devices like switches, phase shifters, attenuators, filters, and their packaging/integration. For each of the previous topics, several valuable contributions appeared in the last decade, underlining the improvements produced in the state of the art and the chance for RF-MEMS technology to play a prominent role in the actual implementation of the 5G infrastructure