UWB Technology

Ultra Wide Band (UWB) technology has attracted increasing interest and there is a growing demand for UWB for several applications and scenarios. The unlicensed use of the UWB spectrum has been regulated by the Federal Communications Commission (FCC) since the early 2000s. The main concern in designing UWB circuits is to consider the assigned bandwidth and the low power permitted for transmission. This makes UWB circuit design a challenging mission in today's community. Various circuit designs and system implementations are published in this book to give the reader a glimpse of the state-of-the-art examples in this field. The book starts at the circuit level design of major UWB elements such as filters, antennas, and amplifiers; and ends with the complete system implementation using such modules

Millimeter-Scale and Energy-Efficient RF Wireless System

This dissertation focuses on energy-efficient RF wireless system with millimeter-scale dimension, expanding the potential use cases of millimeter-scale computing devices. It is challenging to develop RF wireless system in such constrained space. First, millimeter-sized antennae are electrically-small, resulting in low antenna efficiency. Second, their energy source is very limited due to the small battery and/or energy harvester. Third, it is required to eliminate most or all off-chip devices to further reduce system dimension. In this dissertation, these challenges are explored and analyzed, and new methods are proposed to solve them. Three prototype RF systems were implemented for demonstration and verification. The first prototype is a 10 cubic-mm inductive-coupled radio system that can be implanted through a syringe, aimed at healthcare applications with constrained space. The second prototype is a 3x3x3 mm far-field 915MHz radio system with 20-meter NLOS range in indoor environment. The third prototype is a low-power BLE transmitter using 3.5x3.5 mm planar loop antenna, enabling millimeter-scale sensors to connect with ubiquitous IoT BLE-compliant devices. The work presented in this dissertation improves use cases of millimeter-scale computers by presenting new methods for improving energy efficiency of wireless radio system with extremely small dimensions. The impact is significant in the age of IoT when everything will be connected in daily life.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/147686/1/yaoshi_1.pd

Packages for Terahertz Electronics

In the last couple of decades, solid-state device technologies, particularly electronic semiconductor devices, have been greatly advanced and investigated for possible adoption in various terahertz (THz) applications, such as imaging, security, and wireless communications. In tandem with these investigations, researchers have been exploring ways to package those THz electronic devices and integrated circuits for practical use. Packages are fundamentally expected to provide a physical housing for devices and integrated circuits (ICs) and reliable signal interconnections from the inside to the outside or vice versa. However, as frequency increases, we face several challenges associated with signal loss, dimensions, and fabrication. This paper provides a broad overview of recent progress in interconnections and packaging technologies dealing with these issues for THz electronics. In particular, emerging concepts based on commercial ceramic technologies, micromachining, and 3-D printing technologies for compact and lightweight packaging in practical applications are highlighted, along with metallic split blocks with rectangular waveguides, which are still considered the most valid and reliable approach.119Ysciescopu

Photonic based Radar: Characterization of 1x4 Mach-Zehnder Demultiplexer

This work is based on a research activity which aims to implement an optical transceiver for a photonic-assisted fully–digital radar system based on optic miniaturized optical devices both for the optical generation of the radiofrequency (RF) signal and for the optical sampling of the received RF signal. The work is more focused on one very critical block of receiver which is used to parallelize optical samples. Parallelization will result in samples which will be lower in repetition rate so that we can use commercial available ADCs for further processing. This block needs a custom design to meet all the system specifications. In order to parallelize the samples a 1x4 switching matrix (demux) based on Mach Zehnder (MZ) interferometer has been proposed. The demux technique is Optical Time Division Demultiplexing. In order to operate this demux according to the requirements the characterization of device is needed. We need to find different stable control points (coupler bias and MZ bias) of demux to get output samples with high extinction ratio. A series of experiments have been performed to evaluate the matrix performance, issues and sensitivity. The evaluated results along with the whole scheme has been discussed in this document

UHF-sagedusala sidesüsteem kuupsatelliidile

Communication is one of the most important parts of any satellite. Estonian future satellite ESTCube-2 needs a new and advanced communication system to upload commands and firmware and download telemetry and images. The goal of this masters thesis was to determine system architecture and develop first electrical prototype of this communication system. Strengths and weaknesses of previous systems was researched and new system design was determined. Necessary single components were determined. Single components were built to prototypes, tested and characterised. RF parameters of filters were measured and found to be suitable for the system. Components were integrated to a first electrical model of the communication system. All of the work meets the requirements set to the system. Since power is very limited on small satellites focus was making the communication system energy efficient. This work could not be done without support from people in ESTCube team. Most of the necessary knowledge was taught by supervisors. Much of supporting work was done by other members of communication subsystem team – Ahti Laurisson, Taavi Adamson and Laur Joost. Work on the system continues in to develop full software and test all the component integration. This work contains technical drawings and description of developed system. It also provides information for developing other similar systems

Integrated Circuit and Antenna Technology for Millimeter-wave Phased Array Radio Front-end

Ever growing demands for higher data rate and bandwidth are pushing extremely high data rate wireless applications to millimeter-wave band (30-300GHz), where sufficient bandwidth is available and high data rate wireless can be achieved without using complex modulation schemes. In addition to the communication applications, millimeter-wave band has enabled novel short range and long range radar sensors for automotive as well as high resolution imaging systems for medical and security. Small size, high gain antennas, unlicensed and worldwide availability of released bands for communication and a number of other applications are other advantages of the millimeter-wave band. The major obstacle for the wide deployment of commercial wireless and radar systems in this frequency range is the high cost and bulky nature of existing GaAs- and InP-based solutions. In recent years, with the rapid scaling and development of the silicon-based integrated circuit technologies such as CMOS and SiGe, low cost technologies have shown acceptable millimeter-wave performance, which can enable highly integrated millimeter-wave radio devices and reduce the cost significantly. Furthermore, at this range of frequencies, on-chip antenna becomes feasible and can be considered as an attractive solution that can further reduce the cost and complexity of the radio package. The propagation channel challenges for the realization of low cost and reliable silicon-based communication devices at millimeter-wave band are severe path loss as well as shadowing loss of human body. Silicon technology challenges are low-Q passive components, low breakdown voltage of active devices, and low efficiency of on-chip antennas. The main objective of this thesis is to investigate and to develop antenna and front-end for cost-effective silicon based millimeter-wave phased array radio architectures that can address above challenges for short range, high data rate wireless communication as well as radar applications. Although the proposed concepts and the results obtained in this research are general, as an important example, the application focus in this research is placed on the radio aspects of emerging 60 GHz communication system. For this particular but extremely important case, various aspects of the technology including standard, architecture, antenna options and indoor propagation channel at presence of a human body are studied. On-chip dielectric resonator antenna as a radiation efficiency improvement technique for an on-chip antenna on low resistivity silicon is presented, developed and proved by measurement. Radiation efficiency of about 50% was measured which is a significant improvement in the radiation efficiency of on-chip antennas. Also as a further step, integration of the proposed high efficiency antenna with an amplifier in transmit and receive configurations at 30 GHz is successfully demonstrated. For the implementation of a low cost millimeter-wave array antenna, miniaturized, and efficient antenna structures in a new integrated passive device technology using high resistivity silicon are designed and developed. Front-end circuit blocks such as variable gain LNA, continuous passive and active phase shifters are investigated, designed and developed for a 60GHz phased array radio in CMOS technology. Finally, two-element CMOS phased array front-ends based on passive and active phase shifting architectures are proposed, developed and compared

Wideband Watt-Level Spatial Power-Combined Power Amplifier in SiGe BiCMOS Technology for Efficient mm-Wave Array Transmitters

The continued demand for high-speed wireless communications is driving the development of integrated high-power transmitters at millimeter wave (mm-Wave) frequencies. Si-based technologies allow achieving a high level of integration but usually provide insufficient generated RF power to compensate for the increased propagation and material losses at mm-Wave bands due to the relatively low breakdown voltage of their devices. This problem can be reduced significantly if one could combine the power of multiple active devices on each antenna element. However, conventional on-chip power combining networks have inherently high insertion losses reducing transmitter efficiency and limiting its maximum achievable output power.This work presents a non-conventional design approach for mm-Wave Si-based Watt-level power amplifiers that is based on novel power-combining architecture, where an array of parallel custom PA-cells suited on the same chip is interfaced to a single substrate integrated waveguide (to be a part of an antenna element). This allows one to directly excite TEm0 waveguide modes with high power through spatial power combining functionality, obviating the need for intermediate and potentially lossy on-chip power combiners. The proposed solution offers wide impedance bandwidth (50%) and low insertion losses (0.4 dB), which are virtually independent from the number of interfaced PA-cells. The work evaluates the scalability bounds of the architecture as well as discusses the critical effects of coupled non-identical PA-cells, which are efficiently reduced by employing on-chip isolation load resistors.The proposed architecture has been demonstrated through an example of the combined PA with four differential cascode PA-cells suited on the same chip, which is flip-chip interconnected to the combiner placed on a laminate. This design is implemented in a 0.25 um SiGe BiCMOS technology. The PA-cell has a wideband performance (38.6%) with both high peak efficiency (30%) and high saturated output power (24.9 dBm), which is the highest reported output power level obtained without the use of circuit-level power combining in Si-based technologies at Ka-band. In order to achieve the optimal system-level performance of the combined PA, an EM-circuit-thermal optimization flow has been proposed, which accounts for various multiphysics effects occurring in the joint structure. The final PA achieves the peak PAE of 26.7% in combination with 30.8 dBm maximum saturated output power, which is the highest achievable output power in practical applications, where the 50-Ohms load is placed on a laminate. The high efficiency (>20%) and output power (>29.8 dBm) over a wide frequency range (30%) exceed the state-of-the-art in Si-based PAs

Contactless, high resolution characterization of current and voltage waveforms within high power communication amplifiers

Characterisation of high-power communications-based amplifiers (PAs) has generated many thousands of research papers and much of this work assumes the transistors at the heart of these (PAs) to be a ‘large’ holistic entity. Given that high-power communications-based transistors are made up of multiple, parallel transistors on a single substrate, it is this intermediate scale range, within the periphery of the device, but much larger than the geometrical scale of the epitaxy and the lithography, that requires deeper investigation. Raman-based thermography may add a dimension of spatially varying heat dissipation but ‘lifting the bonnet’ of the transistor and making internal contactless measurements of current and voltage is the only way to fully account for the myriads of parasitic effects that have been observed by countless researchers. To date, however, very little research has been conducted on quantifying the individual spatial voltages within the transistor in order to fully characterise it. Miniaturised contactless current and voltage probes are theorised, designed, characterised and optimised in this thesis to deliver a robust and reliable means of transistor characterisation at these internal spatial dimensions. The contactless voltage probe presented in this work has a spatial resolution four times finer than the previously reported voltage probe, with a useful bandwidth up to 7 GHz and a controllable passive gain up to 20 dB at the desired operating frequency. The pinnacle of this thesis delivers a novel shielded contactless current probe, capable of high-resolution scanning, culminating in a ‘quasi-calibrated’ measurement of the distributed currents within a multi-finger LDMOS transistor operating at high power and high frequency. The spatial resolution of this shielded contactless current probe is 62.5 μm with 22.7 dB average rejection ratio to the electric field, and it has a broad bandwidth up to 9 GHz. To date, this type of contactless current measurement has not been reported elsewhere