2,389 research outputs found

    A survey of carbon nanotube interconnects for energy efficient integrated circuits

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    This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

    Electrical-thermal Co-simulation With Joule Heating And Convection Effects For 3d Systems

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    In a method for simulating temperature and electrical characteristics within an circuit, a temperature of at least one volume within the circuit as a function of a resistance within the at least one volume is repeatedly calculated and the resistance as a function of the temperature is repeatedly calculated until the temperature is within a predetermined tolerance of a previous temperature result and until the resistance is within a predetermined tolerance of a previous resistance result. Once the temperature is within a predetermined tolerance of the previous temperature result and the resistance is within a predetermined tolerance of the previous resistance, then an output indicative of the temperature is generated.Georgia Tech Research Corporatio

    Extending systems-on-chip to the third dimension : performance, cost and technological tradeoffs.

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    Because of the today's market demand for high-performance, high-density portable hand-held applications, electronic system design technology has shifted the focus from 2-D planar SoC single-chip solutions to different alternative options as tiled silicon and single-level embedded modules as well as 3-D integration. Among the various choices, finding an optimal solution for system implementation dealt usually with cost, performance and other technological trade-off analysis at the system conceptual level. It has been identified that the decisions made within the first 20% of the total design cycle time will ultimately result up to 80% of the final product cost. In this paper, we discuss appropriate and realistic metric for performance and cost trade-off analysis both at system conceptual level (up-front in the design phase) and at implementation phase for verification in the three-dimensional integration. In order to validate the methodology, two ubiquitous electronic systems are analyzed under various implementation schemes and discuss the pros and cons of each of them

    An equivalent circuit model of the traveling wave electrode for carrier-depletion-based silicon optical modulators

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    We propose an equivalent circuit model for the coplanar waveguide (CPW) which serves as the traveling wave electrode to drive carrier-depletion-based silicon modulators. Conformal mapping and partial capacitance techniques are employed to calculate each element of the circuit. The validity of the model is confirmed by the comparison with both finite-element simulation and experimental result. With the model, we calculate the modulation bandwidth for different CPW dimensions and termination impedances. A 3 dB modulation bandwidth of 15 GHz is demonstrated with a traveling wave electrode of 3 mm. The calculation indicates that, by utilizing a traveling wave electrode of 2 mm, we can obtain a 3 dB modulation bandwidth of 28 GHz

    Thermo-mechanical analysis of flexible and stretchable systems

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    This paper presents a summary of the modeling and technology developed for flexible and stretchable electronics. The integration of ultra thin dies at package level, with thickness in the range of 20 to 30 μ m, into flexible and/or stretchable materials are demonstrated as well as the design and reliability test of stretchable metal interconnections at board level are analyzed by both experiments and finite element modeling. These technologies can achieve mechanically bendable and stretchable subsystems. The base substrate used for the fabrication of flexible circuits is a uniform polyimide layer, while silicones materials are preferred for the stretchable circuits. The method developed for chip embedding and interconnections is named Ultra Thin Chip Package (UTCP). Extensions of this technology can be achieved by stacking and embedding thin dies in polyimide, providing large benefits in electrical performance and still allowing some mechanical flexibility. These flexible circuits can be converted into stretchable circuits by replacing the relatively rigid polyimide by a soft and elastic silicone material. We have shown through finite element modeling and experimental validation that an appropriate thermo mechanical design is necessary to achieve mechanically reliable circuits and thermally optimized packages

    Modeling, design, and characterization of through vias in silicon and glass interposers

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    Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor and interconnect scaling. Further miniaturization by traditional IC scaling in future planar CMOS technology faces significant challenges. Stacking of ICs (3D IC) using three dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnect latency and power dissipation while reducing the size of the chip and enhancing performance. Interposer technology with ultra-fine pitch interconnections needs to be developed to support the huge I/O connection requirement for packaging 3D ICs. Through vias in stacked silicon ICs and interposers are the key components of a 3D system. The objective of this dissertation is to model through vias in 3D silicon and glass interposers and, to address power and high-speed signal integrity issues in 3D interposers considering silicon biasing effects. An equivalent circuit model of the through via in silicon interposer (Si TPV) has been proposed considering the bias voltage dependent Metal-Oxide-Semiconductor (MOS) capacitance effect. Important design guidelines and optimizations are proposed for Si TPVs used in the signal delivery network, power delivery network (PDN), and as variable capacitors. Through vias in glass interposers (Glass TPVs) are modeled, designed and simulated by using electromagnetic field solvers. Signal and power integrity analyses are performed for silicon and glass interposers. PDN design is proposed by utilizing the MOS capacitance of the Si TPVs for decoupling.PhDCommittee Chair: Tummala, Rao; Committee Co-Chair: Swaminathan, Madhavan; Committee Member: Lim, Sung Kyu; Committee Member: Mukhopadhyay, Saibal; Committee Member: Sitaraman, Suresh; Committee Member: Sundaram, Venk
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