Electrical Test of Resistive and Capacitive Open Defects at Data Bus in 3D Memory IC

We propose an electrical test method of resistive and capacitive open defects occurring at data bus lines between dies, and between dies and I/O pins in 3D memory ICs. The test method is based on supply current of an IC. The number of test vectors for a 3D memory IC made of ND memory dies in the test method is 10∙ND and small. Also, defective interconnects are located by the test method. Feasibility of the tests is examined by some experiments for a circuit made of an SRAM IC on a printed circuit board. The experimental results show that capacitive open defects and resistive open ones whose resistance values are greater than 200Ω can be detected by the test method

Wireless Testing of Integrated Circuits.

Integrated circuits (ICs) are usually tested during manufacture by means of automatic testing equipment (ATE) employing probe cards and needles that make repeated physical contact with the ICs under test. Such direct-contact probing is very costly and imposes limitations on the use of ATE. For example, the probe needles must be frequently cleaned or replaced, and some emerging technologies such as three-dimensional ICs cannot be probed at all. As an alternative to conventional probe-card testing, wireless testing has been proposed. It mitigates many of the foregoing problems by replacing probe needles and contact points with wireless communication circuits. However, wireless testing also raises new problems which are poorly understood such as: What is the most suitable wireless communication technique to employ, and how well does it work in practice? This dissertation addresses the design and implementation of circuits to support wireless testing of ICs. Various wireless testing methods are investigated and evaluated with respect to their practicality. The research focuses on near-field capacitive communication because of its efficiency over the very short ranges needed during IC manufacture. A new capacitive channel model including chip separation, cross-talk, and misalignment effects is proposed and validated using electro-magnetic simulation studies to provide the intuitions for efficient antenna and circuit design. We propose a compact clock and data recovery architecture to avoid a dedicated clock channel. An analytical model which predicts the DC-level fluctuation due to the capacitive channel is presented. Based on this model, feed-forward clock selection is designed to enhance performance. A method to select proper channel termination is discussed to maximize the channel efficiency for return-to-zero signaling. Two prototype ICs incorporating wireless testing systems were fabricated and tested with the proposed methods of testing digital circuits. Both successfully demonstrated gigahertz communication speeds with a bit-error rate less than 10^−11. A third prototype IC containing analog voltage measurement circuits was implemented to determine the feasibility of wirelessly testing analog circuits. The fabricated prototype achieved satisfactory voltage measurement with 1 mV resolution. Our work demonstrates the validity of the proposed models and the feasibility of near-field capacitive communication for wireless testing of ICs.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/93993/1/duelee_1.pd

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

Monolithic Integration Piezoelectric Resonators on CMOS for Radio-Frequency and Sensing Applications

Software cognitive radios and Internet of Things (IoT) are recent interest areas that need low loss and low power consumption hardware. More specifically, the area of software cognitive radios requires that hardware be frequency agile and highly selective. Meanwhile, IoT relies on multiple low power sensor networks. By combining Complementary Metal Oxide Semiconductors (CMOS) technology with piezoelectric Micro-Electro-Mechanical Systems (MEMS), we can fabricate Systems-on-Chip (SoC) that can be used as filters or references (oscillators) and highly selective sensors. In this work we developed a die-level compatible process for the monolithic integration of Bulk Acoustic Resonators (BAWs) on CMOS for low power, reduced area and high-quality passives for radio frequency applications. Using CMOS as a fabrication substrate some stringent requirements were added to maintain the dies and the technology’s integrity. A few of these limitations were the need for a low thermal budget fabrication process, die handling and electro-static discharge (ESD) protection. The devices were first fabricated on glass for modeling extraction that was later used for the design of the integrated circuits (IC). Three integrated circuits were designed as substrates for the integration using IBM’s 180nm and TSMC’s 65nm technology. A monolithic BAW oscillator with a resonance frequency of 1.8GHz was demonstrated with an FOM ~186dBc/Hz, comparable to other academia work. Using the developed process, a membrane BAW structure (FBAR) was integrated as well. Using a susceptor coating and zinc oxide’s (ZnO) high temperature coefficient of frequency (TCF) the device was studied as an alternative uncooled infrared sensor. Finally, a reprogrammable IC and an RF PCB were designed for volatile organic compound (VOC) testing using self-assembled monolayers (SAMs) as the absorber layer

Approche industrielle aux boîtes quantiques dans des dispositifs de silicium sur isolant complètement déplété pour applications en information quantique

La mise en oeuvre des qubits de spin électronique à base de boîtes quantiques réalisés en utilisant une technologie avancée de métal-oxyde-semiconducteur complémentaire (en anglais: CMOS ou Complementary Metal-Oxide-Semiconductor) fonctionnant à des températures cryogéniques permet d’envisager la fabrication industrielle reproductible et à haut rendement de systèmes de qubits de spin à grande échelle. Le développement d’une architecture de boîtes quantiques à base de silicium fabriquées en utilisant exclusivement des techniques de fabrication industrielle CMOS constitue une étape majeure dans cette direction. Dans cette thèse, le potentiel de la technologie UTBB (en anglais: Ultra-Thin Body and Buried oxide) silicium sur isolant complétement déplété (en anglais: FD-SOI ou Fully Depleted Silicon-On-Insulator) 28 nm de STMicroelectronics (Crolles, France) a été étudié pour la mise en oeuvre de boîtes quantiques bien définies, capables de réaliser des systèmes de qubit de spin. Dans ce contexte, des mesures d’effet Hall ont été réalisées sur des microstructures FD-SOI à 4.2 K afin de déterminer la qualité du noeud technologique pour les applications de boîtes quantiques. De plus, un flot du processus d’intégration, optimisé pour la mise en oeuvre de dispositifs quantiques utilisant exclusivement des méthodes de fonderie de silicium pour la production de masse est présenté, en se concentrant sur la réduction des risques de fabrication et des délais d’exécution globaux. Enfin, deux géométries différentes de dispositifs à boîtes quantiques FD-SOI de 28nm ont été conçues et leurs performances ont été étudiées à 1.4 K. Dans le cadre d’une collaboration entre Nanoacademic Technologies, Institut quantique et STMicroelectronics, un modèle QTCAD (en anglais: Quantum Technology Computer-Aided Design) en 3D a été développé pour la modélisation de dispositifs à boîtes quantiques FD-SOI. Ainsi, en complément de la caractérisation expérimentale des structures de test via des mesures de transport et de spectroscopie de blocage de Coulomb, leur performance est modélisée et analysée à l’aide du logiciel QTCAD. Les résultats présentés ici démontrent les avantages de la technologie FD-SOI par rapport à d’autres approches pour les applications de calcul quantique, ainsi que les limites identifiées du noeud 28 nm dans ce contexte. Ce travail ouvre la voie à la mise en oeuvre des nouvelles générations de dispositifs à boîtes quantiques FD-SOI basées sur des noeuds technologiques inférieurs.Abstract: Electron spin qubits based on quantum dots implemented using advanced Complementary Metal-Oxide-Semiconductor (CMOS) technology functional at cryogenic temperatures promise to enable reproducible high-yield industrial manufacturing of large-scale spin qubit systems. A milestone in this direction is to develop a silicon-based quantum dot structure fabricated using exclusively CMOS industrial manufacturing techniques. In this thesis, the potential of the industry-standard process 28 nm Ultra-Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) technology of STMicroelectronics (Crolles, France) was investigated for the implementation of well-defined quantum dots capable to realize spin qubit systems. In this context, Hall effect measurements were performed on FD-SOI microstructures at 4.2 K to determine the quality of the technology node for quantum dot applications. Moreover, an optimized integration process flow for the implementation of quantum devices, using exclusively mass-production silicon-foundry methods is presented, focusing on reducing manufacturing risks and overall turnaround times. Finally, two different geometries of 28 nm FD-SOI quantum dot devices were conceived, and their performance was studied at 1.4 K. In the framework of a collaboration between Nanoacademic Technologies, Institut quantique, and STMicroelectronics, a 3D Quantum Technology Computer-Aided Design (QTCAD) model was developed for FD-SOI quantum dot device modeling. Therefore, along with the experimental characterization of the test structures via transport and Coulomb blockade spectroscopy measurements, their performance is modeled and analyzed using the QTCAD software. The results reported here demonstrate the advantages of the FD-SOI technology over other approaches for quantum computing applications, as well as the identified limitations of the 28 nm node in this context. This work paves the way for the implementation of the next generations of FD-SOI quantum dot devices based on lower technology nodes

Memory Hierarchy Design for Next Generation Scalable Many-core Platforms

Performance and energy consumption in modern computing platforms is largely dominated by the memory hierarchy. The increasing computational power in the multiprocessors and accelerators, and the emergence of the data-intensive workloads (e.g. large-scale graph traversal and scientific algorithms) requiring fast transfer of large volumes of data, are two main trends which intensify this problem by putting even higher pressure on the memory hierarchy. This increasing gap between computation speed and data transfer speed is commonly referred as the “memory wall” problem. With the emergence of heterogeneous Three Dimensional (3D) Integration based on through-silicon-vias (TSV), this situation has started to recover in the past years. On one hand, it is now possible to improve memory access bandwidth and/or latency by either stacking memories directly on top of processors or through abstracted memory interfaces such as Micron’s Hybrid Memory Cube (HMC). On the other hand, near memory computation has become worthy of revisiting due to the cost-effective integration of logic and memory in 3D stacks. These two directions bring about several interesting opportunities including performance improvement, energy and cost reduction, product miniaturization, and modular design for improved time to market. In this research, we study the effectiveness of the 3D integration technology and the optimization opportunities which it can provide in the different layers of the memory hierarchy in cluster-based many-core platforms ranging from intra-cluster L1 to inter-cluster L2 scratchpad memories (SPMs), as well as the main memory. In addition, by moving a part of the computation to where data resides, in the 3D-stacked memory context, we demonstrate further energy and performance improvement opportunities

Physical Aspects of VLSI Design with a Focus on Three-Dimensional Integrated Circuit Applications

This work is on three-dimensional integration (3DI), and physical problems and aspects of VLSI design. Miniaturization and highly complex integrated systems in microelectronics have led to the 3DI development as a promising technological approach. 3DI offers numerous advantages: Size, power consumption, hybrid integration etc., with more thermal problems and physical complexity as trade-offs. We open this work by presenting the design and testing of an example 3DI system, to our knowledge the first self-powering system in a three-dimensional SOI technology. The system uses ambient optical energy harvested by a photodiode array and stored in an integrated capacitor. An on-chip metal interconnect network, beyond its designed role, behaves as a parasitic load vulnerable to electromagnetic coupling. We have developed a spatially-dependent, transient Green's Function based method of calculating the response of an interconnect network to noise. This efficient method can model network delays and noise sensitivity, which are involved problems in both planar and especially in 3DICs. Three-dimensional systems are more susceptible to thermal problems, which also affect VLSI with high power densities, of complex systems and under extreme temperatures. We analytically and experimentally investigate thermal effects in ICs. We study the effects of non-uniform, non-isotropic thermal conductivity of the typically complex IC material system, with a simulator we developed including this complexity. Through our simulations, verified by experiments, we propose a method of cooling or directionally heating IC regions. 3DICs are suited for developing wireless sensor networks, commonly referred to as ``smart dust.'' The ideal smart dust node includes RF communication circuits with on-chip passive components. We present an experimental study of on-chip inductors and transformers as integrated passives. We also demonstrate the performance improvement in 3DI with its lower capacitive loads. 3DI technology is just one example of the intense development in today's electronics, which maintains the need for educational methods to assist student recruitment into technology, to prepare students for a demanding technological landscape, and to raise societal awareness of technology. We conclude this work by presenting three electrical engineering curricula we designed and implemented, targeting these needs among others

Signaling in 3-D integrated circuits, benefits and challenges

Three-dimensional (3-D) or vertical integration is a design and packaging paradigm that can mitigate many of the increasing challenges related to the design of modern integrated systems. 3-D circuits have recently been at the spotlight, since these circuits provide a potent approach to enhance the performance and integrate diverse functions within amulti-plane stack. Clock networks consume a great portion of the power dissipated in a circuit. Therefore, designing a low-power clock network in synchronous circuits is an important task. This requirement is stricter for 3-D circuits due to the increased power densities. Synchronization issues can be more challenging for 3-D circuits since a clock path can spread across several planes with different physical and electrical characteristics. Consequently, designing low power clock networks for 3-D circuits is an important issue. Resonant clock networks are considered efficient low-power alternatives to conventional clock distribution schemes. These networks utilize additional inductive circuits to reduce power while delivering a full swing clock signal to the sink nodes. In this research, a design method to apply resonant clocking to synthesized clock trees is proposed. Manufacturing processes for 3-D circuits include some additional steps as compared to standard CMOS processes which makes 3-D circuits more susceptible to manufacturing defects and lowers the overall yield of the bonded 3-D stack. Testing is another complicated task for 3-D ICs, where pre-bond test is a prerequisite. Pre-bond testability, in turn, presents new challenges to 3-D clock network design primarily due to the incomplete clock distribution networks prior to the bonding of the planes. A design methodology of resonant 3-D clock networks that support wireless pre-bond testing is introduced. To efficiently address this issue, inductive links are exploited to wirelessly transmit the clock signal to the disjoint resonant clock networks. The inductors comprising the LC tanks are used as the receiver circuit for the links, essentially eliminating the need for additional circuits and/or interconnect resources during pre-bond test. Recent FPGAs are quite complex circuits which provide reconfigurablity at the cost of lower performance and higher power consumption as compared to ASIC circuits. Exploiting a large number of programmable switches, routing structures are mainly responsible for performance degradation in FPAGs. Employing 3-D technology can providemore efficient switches which drastically improve the performance and reduce the power consumption of the FPGA. RRAM switches are one of the most promising candidates to improve the FPGA routing architecture thanks to their low on-resistance and non-volatility. Along with the configurable switches, buffers are the other important element of the FPGAs routing structure. Different characteristics of RRAM switches change the properties of signal paths in RRAM-based FPGAs. The on resistance of RRAMswitches is considerably lower than CMOS pass gate switches which results in lower RC delay for RRAM-based routing paths. This different nature in critical path and signal delay in turn affect the need for intermediate buffers. Thus the buffer allocation should be reconsidered. In the last part of this research, the effect of intermediate buffers on signal propagation delay is studied and a modified buffer allocation scheme for RRAM-based FPGA routing path is proposed