A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

CAD methodologies for low power and reliable 3D ICs

The main objective of this dissertation is to explore and develop computer-aided-design (CAD) methodologies and optimization techniques for reliability, timing performance, and power consumption of through-silicon-via(TSV)-based and monolithic 3D IC designs. The 3D IC technology is a promising answer to the device scaling and interconnect problems that industry faces today. Yet, since multiple dies are stacked vertically in 3D ICs, new problems arise such as thermal, power delivery, and so on. New physical design methodologies and optimization techniques should be developed to address the problems and exploit the design freedom in 3D ICs. Towards the objective, this dissertation includes four research projects. The first project is on the co-optimization of traditional design metrics and reliability metrics for 3D ICs. It is well known that heat removal and power delivery are two major reliability concerns in 3D ICs. To alleviate thermal problem, two possible solutions have been proposed: thermal-through-silicon-vias (T-TSVs) and micro-fluidic-channel (MFC) based cooling. For power delivery, a complex power distribution network is required to deliver currents reliably to all parts of the 3D IC while suppressing the power supply noise to an acceptable level. However, these thermal and power networks pose major challenges in signal routability and congestion. In this project, a co-optimization methodology for signal, power, and thermal interconnects in 3D ICs is presented. The goal of the proposed approach is to improve signal, thermal, and power noise metrics and to provide fast and accurate design space explorations for early design stages. The second project is a study on 3D IC partition. For a 3D IC, the target circuit needs to be partitioned into multiple parts then mapped onto the dies. The partition style impacts design quality such as footprint, wirelength, timing, and so on. In this project, the design methodologies of 3D ICs with different partition styles are demonstrated. For the LEON3 multi-core microprocessor, three partitioning styles are compared: core-level, block-level, and gate-level. The design methodologies for such partitioning styles and their implications on the physical layout are discussed. Then, to perform timing optimizations for 3D ICs, two timing constraint generation methods are demonstrated that lead to different design quality. The third project is on the buffer insertion for timing optimization of 3D ICs. For high performance 3D ICs, it is crucial to perform thorough timing optimizations. Among timing optimization techniques, buffer insertion is known to be the most effective way. The TSVs have a large parasitic capacitance that increases the signal slew and the delay on the downstream. In this project, a slew-aware buffer insertion algorithm is developed that handles full 3D nets and considers TSV parasitics and slew effects on delay. Compared with the well-known van Ginneken algorithm and a commercial tool, the proposed algorithm finds buffering solutions with lower delay values and acceptable runtime overhead. The last project is on the ultra-high-density logic designs for monolithic 3D ICs. The nano-scale 3D interconnects available in monolithic 3D IC technology enable ultra-high-density device integration at the individual transistor-level. The benefits and challenges of monolithic 3D integration technology for logic designs are investigated. First, a 3D standard cell library for transistor-level monolithic 3D ICs is built and their timing and power behavior are characterized. Then, various interconnect options for monolithic 3D ICs that improve design quality are explored. Next, timing-closed, full-chip GDSII layouts are built and iso-performance power comparisons with 2D IC designs are performed. Important design metrics such as area, wirelength, timing, and power consumption are compared among transistor-level monolithic 3D, gate-level monolithic 3D, TSV-based 3D, and traditional 2D designs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin; Committee Member: Mukhopadhyay, Saiba

Skybridge-3D-CMOS: A Fine-Grained Vertical 3D-CMOS Technology Paving New Direction for 3D IC

2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling. Skybridge-3D-CMOS (S3DC) is a fine-grained 3D IC fabric that uses vertically-stacked gates and 3D interconnections composed on vertical nanowires to yield orders of magnitude benefits over 2D ICs. This 3D fabric fully uses the vertical dimension instead of relying on a multi-layered 2D mindset. Its core fabric aspects including device, circuit-style, interconnect and heat-extraction components are co-architected considering the major challenges in 3D IC technology. In S3DC, the 3D interconnections provide greater routing capacity in both vertical and horizontal directions compared to conventional 3D ICs, which eliminates the routability issue in conventional 3D IC technology while enabling ultra-high density design and significant benefits over 2D. Also, the improved vertical routing capacity in S3DC is beneficial for achieving robust and high-density power delivery network (PDN) design while conventional 3D IC has design issues in PDN design due to limited routing resource in vertical direction. Additionally, the 3D gate-all-around transistor incorporating with 3D interconnect in S3DC enables significant SRAM design benefits and good tolerance of process variation compared to conventional 3D IC technology as well as 2D CMOS. The transistor-level (TR-L) monolithic 3D IC (M3D) is the state-of-the-art monolithic 3D technology which shows better benefits than other M3D approaches as well as the TSV-based 3D IC approach. The S3DC is evaluated in large-scale benchmark circuits with comparison to TR-L M3D as well as 2D CMOS. Skybridge yields up to 3x lower power against 2D with no routing congestion in benchmark circuits while TR-L M3D only has up-to 22% power saving with severe routing congestions in the design. The PDN design in S3DC show

A Comprehensive Study of the Hardware Trojan and Side-Channel Attacks in Three-Dimensional (3D) Integrated Circuits (ICs)

Three-dimensional (3D) integration is emerging as promising techniques for high-performance and low-power integrated circuit (IC, a.k.a. chip) design. As 3D chips require more manufacturing phases than conventional planar ICs, more fabrication foundries are involved in the supply chain of 3D ICs. Due to the globalized semiconductor business model, the extended IC supply chain could incur more security challenges on maintaining the integrity, confidentiality, and reliability of integrated circuits and systems. In this work, we analyze the potential security threats induced by the integration techniques for 3D ICs and propose effective attack detection and mitigation methods. More specifically, we first propose a comprehensive characterization for 3D hardware Trojans in the 3D stacking structure. Practical experiment based quantitative analyses have been performed to assess the impact of 3D Trojans on computing systems. Our analysis shows that advanced attackers could exploit the limitation of the most recent 3D IC testing standard IEEE Standard 1838 to bypass the tier-level testing and successfully implement a powerful TSV-Trojan in 3D chips. We propose an enhancement for IEEE Standard 1838 to facilitate the Trojan detection on two neighboring tiers simultaneously. Next, we develop two 3D Trojan detection methods. The proposed frequency-based Trojan-activity identification (FTAI) method can differentiate the frequency changes induced by Trojans from those caused by process variation noise, outperforming the existing time-domain Trojan detection approaches by 38% in Trojan detection rate. Our invariance checking based Trojan detection method leverages the invariance among the 3D communication infrastructure, 3D network-on-chips (NoCs), to tackle the cross-tier 3D hardware Trojans, achieving a Trojan detection rate of over 94%. Furthermore, this work investigates another type of common security threat, side-channel attacks. We first propose to group the supply voltages of different 3D tiers temporally to drive the crypto unit implemented in 3D ICs such that the noise in power distribution network (PDN) can be induced to obfuscate the original power traces and thus mitigates correlation power analysis (CPA) attacks. Furthermore, we study the side-channel attack on the logic locking mechanism in monolithic 3D ICs and propose a logic-cone conjunction (LCC) method and a configuration guideline for the transistor-level logic locking to strengthen its resilience against CPA attacks

Effect of Clock and Power Gating on Power Distribution Network Noise in 2D and 3D Integrated Circuits

In this work, power supply noise contribution, at a particular node on the power grid, from clock/power gated blocks is maximized at particular time and the synthetic gating patterns of the blocks that result in the maximum noise is obtained for the interval 0 to target time. We utilize wavelet based analysis as wavelets are a natural way of characterizing the time-frequency behavior of the power grid. The gating patterns for the blocks and the maximum supply noise at the Point of Interest at the specified target time obtained via a Linear Programming (LP) formulation (clock gating) and Genetic Algorithm based problem formulation (Power Gating)

Low-Dimensional Materials for Disruptive Microwave Antennas Design

This chapter is devoted to a complete analysis of remarkable electromagnetic properties of nanomaterials suitable for antenna design miniaturization. After a review of state of the art mesoscopic scale modeling tools and characterization techniques in microwave domain, new approaches based on wideband material parameters identification (complex permittivity and conductivity) will be described from impedance equivalence formulation achievement by de-embedding techniques applicable in integrated technology or in free space. A focus on performances of 1D materials such as vertically aligned multi-wall carbon nanotube (VA-MWCNT) bundles, from theory to technology, will be presented as a disruptive demonstration for defense and civil applications as in radar systems

Green on-chip inductors in three-dimensional integrated circuits

This thesis focuses on the technique for the improvement of quality factor and inductance of the TSV inductors and then on the utilization of TSV inductors in various on-chip applications such as DC-DC converter and resonant clocking. Through-silicon-vias (TSVs) are the enabling technique for three-dimensional integrated circuits (3D ICs). However, their large area significantly reduces the benefits that can be obtained by 3D ICs. On the other hand, a major limiting factor for the implementation of many on-chip circuits such as DC-DC converters and resonant clocking is the large area overhead induced by spiral inductors. Several works have been proposed in the literature to make inductors out of idle TSVs. In this thesis, the technique to improve the quality factor and inductance is proposed and then discusses about two applications utilizing TSV inductors i.e., inductive DC-DC converters and LC resonant clocking. The TSV inductor performs inferior to spiral inductors due to its increases losses. Hence to improve the performance of the TSV inductor, the losses should be reduced. Inductive DC-DC converters become prominent for on-chip voltage conversion because of their high efficiency compared with other types of converters (e.g. linear and capacitive converters). On the other hand, to reduce on-chip power, LC resonant clocking has become an attractive option due to its same amplitude and phases compared to other resonant clocking methods such as standing wave and rotary wave. A major challenge for both applications is associated with the required inductor area. In this thesis, the effectiveness of such TSV inductors in addressing both challenges are demonstrated --Abstract, page iv