Gallium Nitride Integrated Microsystems for Radio Frequency Applications.

The focus of this work is design, fabrication, and characterization of novel and advanced electro-acoustic devices and integrated micro/nano systems based on Gallium Nitride (GaN). Looking beyond silicon (Si), compound semiconductors, such as GaN have significantly improved the performance of the existing electronic devices, as well as enabled completely novel micro/nano systems. GaN is of particular interest in the “More than Moore” era because it combines the advantages of a wide-band gap semiconductor with strong piezoelectric properties. Popular in optoelectronics, high-power and high-frequency applications, the added piezoelectric feature, extends the research horizons of GaN to diverse scientific and multi-disciplinary fields. In this work, we have incorporated GaN micro-electro-mechanical systems (MEMS) and acoustic resonators to the GaN baseline process and used high electron mobility transistors (HEMTs) to actuate, sense and amplify the acoustic waves based on depletion, piezoelectric, thermal and piezo-resistive mechanisms and achieved resonance frequencies ranging from 100s of MHz up to 10 GHz with frequency×quality factor (f×Q) values as high as 1013. Such high-performance integrated systems can be utilized in radio frequency (RF) and microwave communication and extreme-environment applications.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135799/1/azadans_1.pd

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Analysis and Fabrication of MEMS Tunable Piezoelectric Resonators

Piezoelectric MEMS resonators are being used with increased frequency for many applications, operating as frequency sources in sensors, actuators, clocks and filters. Compensation for the effects of manufacturing variation and a changeable environment, as well as a desire for frequency-hopping capabilities, have brought forth a need for post-process tuning of the resonant frequency of at these devices, in particular clocks and filters manufactured at the MEMS scale. This work applies a shunt capacitor tuning concept to three different types of piezoelectric MEMS resonators: bending beam devices, surface acoustic wave devices, and film bulk acoustic wave devices, in order to solve this tuning need across a wide range of the frequency spectrum (single Kilohertz to tens of Gigahertz). Questions about how the material and design parameters of these resonators affect the resonant frequencies and tunability of the devices are further discussed for each of the designs. In addition to the theoretical modeling, the fabrication steps necessary for processing the piezoelectric MEMS bending devices, specifically utilizing PZT thin films and an interdigitated design, are developed. Results of many fabrication trials are discussed, and finalized process plans for fabricating quality thin film PZT and PZT interdigitated devices are provided

Mechanical-Resonance-Enhanced Thin-Film Magnetoelectric Heterostructures for Magnetometers, Mechanical Antennas, Tunable RF Inductors, and Filters

The strong strain-mediated magnetoelectric (ME) coupling found in thin-film ME heterostructures has attracted an ever-increasing interest and enables realization of a great number of integrated multiferroic devices, such as magnetometers, mechanical antennas, RF tunable inductors and filters. This paper first reviews the thin-film characterization techniques for both piezoelectric and magnetostrictive thin films, which are crucial in determining the strength of the ME coupling. After that, the most recent progress on various integrated multiferroic devices based on thin-film ME heterostructures are presented. In particular, rapid development of thin-film ME magnetometers has been seen over the past few years. These ultra-sensitive magnetometers exhibit extremely low limit of detection (sub-pT/Hz1/2) for low-frequency AC magnetic fields, making them potential candidates for applications of medical diagnostics. Other devices reviewed in this paper include acoustically actuated nanomechanical ME antennas with miniaturized size by 1-2 orders compared to the conventional antenna; integrated RF tunable inductors with a wide operation frequency range; integrated RF tunable bandpass filter with dual H- and E-field tunability. All these integrated multiferroic devices are compact, lightweight, power-efficient, and potentially integrable with current complementary metal oxide semiconductor (CMOS) technology, showing great promise for applications in future biomedical, wireless communication, and reconfigurable electronic systems

Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN) have found a broad range of lab-on-chip applications such as biosensing, particle/cell concentrating, sorting/patterning, pumping, mixing, nebulisation and jetting. Integrated acoustic wave sensing/microfluidic devices have been fabricated by depositing these piezoelectric films onto a number of substrates such as silicon, ceramics, diamond, quartz, glass, and more recently also polymer, metallic foils and bendable glass/silicon for making flexible devices. Such thin film acoustic wave devices have great potential for implementing integrated, disposable, or bendable/flexible lab-on-a-chip devices into various sensing and actuating applications. This paper discusses the recent development in engineering high performance piezoelectric thin films, and highlights the critical issues such as film deposition, MEMS processing techniques, control of deposition/processing parametres, film texture, doping, dispersion effects, film stress, multilayer design, electrode materials/ designs and substrate selections. Finally, advances in using thin film devices for lab-on-chip applications are summarised and future development trends are identified.The authors acknowledge support from the Innovative electronic Manufacturing Research Centre (IeMRC) through the EPSRC funded flagship project SMART MICROSYSTEMS (FS/01/02/10), Knowledge Transfer Partnership No KTP010548, EPSRC project EP/L026899/1, EP/F063865/1; EP/F06294X/1, EP/P018998/1, the Royal Society-Research Grant (RG090609) and Newton Mobility Grant (IE161019) through Royal Society and NFSC, the Scottish Sensing Systems Centre (S3C), Royal Society of Edinburgh, Carnegie Trust Funding, Royal Academy of Engineering-Research Exchange with China and India, UK Fluidic Network and Special Interest Group-Acoustofluidics, the EPSRC Engineering Instrument Pool. We also acknowledge the National Natural Science Foundation of China (Nos. 61274037, 51302173), the Zhejiang Province Natural Science Fund (No. Z11101168), the Fundamental Research Funds for the Central Universities (No. 2014QNA5002), EP/D03826X/1, EP/ C536630/1, GR/T24524/01, GR/S30573/01, GR/R36718/01, GR/L82090/01, BBSRC/E11140. ZXT acknowledges the supports from the National Natural Science Foundation of China (61178018) and the NSAF Joint Foundation of China (U1630126 and U1230124) and Ph.D. Funding Support Program of Education Ministry of China (20110185110007) and the NSAF Joint Foundation of China (Grant No. U1330103) and the National Natural Science Foundation of China (No. 11304209). NTN acknowledges support from Australian Research Council project LP150100153. This work was partially supported by the European Commission through the 6th FP MOBILIS and 7th FP RaptaDiag project HEALTH-304814 and by the COST Action IC1208 and by the Ministerio de Economía y Competitividad del Gobierno de España through projects MAT2010-18933 and MAT2013-45957R