Thermo-Mechanical Effects Of Thermal Cycled Copper Through Silicon Vias

The semiconductor industry is currently facing transistor scaling issues due to fabrication thresholds and quantum effects. In this \u27More-Than-Moore\u27 era, the industry is developing new ways to increase device performance, such as stacking chips for three-dimensional integrated circuits (3D-IC). The 3D-IC\u27s superior performance over their 2D counterparts can be attributed to the use of vertical interconnects, or through silicon vias (TSV). These interconnects are much shorter, reducing signal delay. However TSVs are susceptible to various thermo-mechanical reliability concerns. Heating during fabrication and use, in conjunction with coefficient of thermal expansion mismatch between the copper TSVs and silicon substrate, create harmful stresses in the system. The purpose of this work is to evaluate the signal integrity of Cu-TSVs and determine the major contributing factors of the signal degradation upon in-use conditions. Two series of samples containing blind Cu-TSVs embedded in a Si substrate were studied, each having different types and amounts of voids from manufacturing. The samples were thermally cycled up to 2000 times using three maximum temperatures to simulate three unique in-use conditions. S11 parameter measurements were then conducted to determine the signal integrity of the TSVs. To investigate the internal response from cycling, a protocol was developed for cross-sectioning the copper TSVs. Voids were measured using scanning electron microscope and focused ion beam imaging of the cross-sections, while the microstructural evolution of the copper was monitored with electron backscattering diffraction. An increase in void area was found to occur after cycling. This is thought to be the major contributing factor in the signal degradation of the TSVs, since no microstructural changes were observed in the copper

Processing-structure-protrusion relationship of 3D Cu TSVs: control at the atomic scale

A phase-field-crystal model is used to investigate the processing-structure-protrusion relationship of blind Cu through-silicon vias (TSVs) at the atomic scale. A higher temperature results in a larger TSV protrusion. Deformation via dislocation motion dominates at temperatures lower than around 300∘C, while both diffusional and dislocation creep occur at temperatures greater than around 300∘C. TSVs with smaller sidewall roughness Ra and wavelength λa exhibit larger protrusions. Moreover, different protrusion profiles are observed for TSVs with different grain structures. Both protrusions and intrusions are observed when a single grain is placed near the TSV top end, while the top surface protrudes near both edges when it contains more grains. Under symmetric loading, coalescence of the grains occurs near the top end, and a symmetric grain structure can accelerate this process. The strain distributions in TSVs are calculated, and the eigenstrain projection along the vertical direction can be considered an index to predict the TSV protrusion tendency

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

Study of the impact of lithography techniques and the current fabrication processes on the design rules of tridimensional fabrication technologies

Working for the photolithography tool manufacturer leader sometimes gives me the impression of how complex and specific is the sector I am working on. This master thesis topic came with the goal of getting the overall picture of the state-of-the-art: stepping out and trying to get a helicopter view usually helps to understand where a process is in the productive chain, or what other firms and markets are doing to continue improvingUniversidad de sevilla.Máster Universitario en Microelectrónica: Diseño y Aplicaciones de Sistemas Micro/Nanométrico

High Speed Test Interface Module Using MEMS Technology

With the transient frequency of available CMOS technologies exceeding hundreds of gigahertz and the increasing complexity of Integrated Circuit (IC) designs, it is now apparent that the architecture of current testers needs to be greatly improved to keep up with the formidable challenges ahead. Test requirements for modern integrated circuits are becoming more stringent, complex and costly. These requirements include an increasing number of test channels, higher test-speeds and enhanced measurement accuracy and resolution. In a conventional test configuration, the signal path from Automatic Test Equipment (ATE) to the Device-Under-Test (DUT) includes long traces of wires. At frequencies above a few gigahertz, testing integrated circuits becomes a challenging task. The effects on transmission lines become critical requiring impedance matching to minimize signal reflection. AC resistance due to the skin effect and electromagnetic coupling caused by radiation can also become important factors affecting the test results. In the design of a Device Interface Board (DIB), the greater the physical separation of the DUT and the ATE pin electronics, the greater the distortion and signal degradation. In this work, a new Test Interface Module (TIM) based on MEMS technology is proposed to reduce the distance between the tester and device-under-test by orders of magnitude. The proposed solution increases the bandwidth of test channels and reduces the undesired effects of transmission lines on the test results. The MEMS test interface includes a fixed socket and a removable socket. The removable socket incorporates MEMS contact springs to provide temporary with the DUT pads and the fixed socket contains a bed of micro-pins to establish electrical connections with the ATE pin electronics. The MEMS based contact springs have been modified to implement a high-density wafer level test probes for Through Silicon Vias (TSVs) in three dimensional integrated circuits (3D-IC). Prototypes have been fabricated using Silicon On Insulator SOI wafer. Experimental results indicate that the proposed architectures can operate up to 50 GHz without much loss or distortion. The MEMS probes can also maintain a good elastic performance without any damage or deformation in the test phase

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

A DLL Based Test Solution for 3D ICs

Integrated circuits (ICs) are rapidly changing and vertical integration and packaging strategies have already become an important research topic. 2.5D and 3D IC integrations have obvious advantages over the conventional two dimensional IC implementations in performance, capacity, and power consumption. A passive Si interposer utilizing Through-Silicon via (TSV) technology is used for 2.5D IC integration. TSV is also the enabling technology for 3D IC integration. TSV manufacturing defects can affect the performance of stacked devices and reduce the yield. Manufacturing test methodologies for TSVs have to be developed to ensure fault-free devices. This thesis presents two test methods for TSVs in 2.5D and 3D ICs utilizing Delay-Locked Loop (DLL) modules. In the test method developed for TSVs in 2.5D ICs, a DLL is used to determine the propagation delay for fault detection. TSV faults in 3D ICs are detected through observation of the control voltage of a DLL. The proposed test methods present a robust performance against Process, supply Voltage and Temperature (PVT) variations due to the inherent feedback of DLLs. 3D full-wave simulations are performed to extract circuit level models for TSVs and fragments of an interposer wires using HFSS simulation tools. The extracted TSV models are then used to perform circuit level simulations using ADS tools from Agilent. Simulation results indicate that the proposed test solution for TSVs can detect manufacturing defects affecting the TSV propagation delay