Modeling of CMOS devices and circuits on flexible ultrathin chips

The field of flexible electronics is rapidly evolving. The ultrathin chips are being used to address the high-performance requirements of many applications. However, simulation and prediction of changes in response of device/circuit due to bending induced stress remains a challenge as of lack of suitable compact models. This makes circuit designing for bendable electronics a difficult task. This paper presents advances in this direction, through compressive and tensile stress studies on transistors and simple circuits such as inverters with different channel lengths and orientations of transistors on ultrathin chips. Different designs of devices and circuits in a standard CMOS 0.18-μm technology were fabricated in two separated chips. The two fabricated chips were thinned down to 20 μm using standard dicing-before-grinding technique steps followed by post-CMOS processing to obtain sufficient bendability (20-mm bending radius, or 0.05% nominal strain). Electrical characterization was performed by packaging the thinned chip on a flexible substrate. Experimental results show change of carrier mobilities in respective transistors, and switching threshold voltage of the inverters during different bending conditions (maximum percentage change of 2% for compressive and 4% for tensile stress). To simulate these changes, a compact model, which is a combination of mathematical equations and extracted parameters from BSIM4, has been developed in Verilog-A and compiled into Cadence Virtuoso environment. The proposed model predicts the mobility variations and threshold voltage in compressive and tensile bending stress conditions and orientations, and shows an agreement with the experimental measurements (1% for compressive and 0.6% for tensile stress mismatch)

Device engineering of organic field-effect transistors toward complementary circuits

Organic complementary circuits are attracting significant attention due to their high power efficiency and operation robustness, driven by the demands for low-cost, large-area and flexible devices. Previous demonstrations of organic complementary circuits often show high operating voltage, small noise margins, low dc gain, and electrical instability such as hysteresis and threshold voltage shifts. There are two obstacles to developing organic complementary circuits: the lack of high-performance n-channel OFET devices, and the processing difficulty of integrating both n- and p-channel organic field-effect transistors (OFETs) on the same substrate. The operating characteristics of OFETs are often governed by the boundary conditions imposed by the device architecture, such as interfaces and contacts instead of the properties of the semiconductor material. Therefore, the performance of OFETs is often limited if either of the essential interfaces or contacts next to the semiconductor and the channel are not optimized. This dissertation presents research work performed on OFETs and OFET-based complementary inverters in an attempt to address some of these knowledge issues. The objective is to develop high-performance OFETs, with a focus on n-channel OFETs through interface engineering both at the interface between the organic semiconductor and the source/drain electrodes, and at the interface between the organic semiconductor and gate dielectric. Through interface engineering, both p- and n-channel high-performance low-voltage OFETs are realized with high mobilities, low threshold voltages, low subthreshold slopes, and high on/off current ratios. Optimization at the gate dielectric/semiconductor also gives OFET devices excellent reproducibility and good electrical stability under multiple test cycles and continuous electrical stress. Finally, with the interfaces and contacts optimized for both p- and n-channel charge transport, the integration of n- and p-channel OFETs with comparable performance are demonstrated in complementary inverters. The research achieves inverters with a high-gain, a low operation voltage, good electrical stability (absence of hysteresis), and a high switching-speed. A preliminary study of the encapsulation of OFETs and inverters with an additional protective layer is also presented to validate the practicality of organic devices containing air-sensitive n-channel transport.Ph.D.Committee Chair: Kippelen, Bernard; Committee Member: Brand, Oliver; Committee Member: Graham, Samuel; Committee Member: Rohatgi, Ajeet; Committee Member: Shen, Shyh-Chian

High-performance Zinc Oxide Thin-Film Transistors For Large Area Electronics

The increasing demand for high performance electronics that can be fabricated onto large area substrates employing low manufacturing cost techniques in recent years has fuelled the development of novel semiconductor materials such as organics and metal oxides, with tailored physical characteristics that are absent in their traditional inorganic counterparts such as silicon. Metal oxide semiconductors, in particular, are highly attractive for implementation into thin-film transistors because of their high charge carrier mobility, optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility. This thesis focuses on the development of high performance transistors based on zinc oxide (ZnO) semiconducting films grown by spray pyrolysis (SP), a low cost and highly scalable method that has never been used before for the manufacturing of oxide-based thin-film transistors. The physical properties of as-grown ZnO films have been studied using a range of techniques. Despite the simplicity of SP, as-fabricated transistors exhibit electrical characteristics comparable to those obtained from ZnO devices produced using highly sophisticated deposition processes. In particular, electron mobility up to 25 cm2/Vs has been achieved in transistors based on pristine ZnO films grown at 400 °C onto Si/SiO2 substrates utilising aluminium source-drain (S-D) electrodes. A strong dependence of the saturation mobility on the work function of S-D electrodes and the transistor channel length (L) has been established. Short channel transistors are found to exhibit improved performance as compared to long channel ones. This was attributed to grain boundary effects that tend to dominate charge transport in devices with L < 40 μm. High mobility, low operating voltage (<1.5 V) ZnO transistors have also been developed and characterised. This was achieved through the combination of SP, for the deposition of ZnO, and thermally stable solution-processed self-assembling monolayer gate dielectrics. Detailed study of the temperature dependence of the operating characteristics of ZnO transistors revealed a thermally activated electron transport process that was described by invoking the multiple trapping and release model. Importantly, ZnO transistors fabricated by SP are found to exhibit highly stable operating characteristics with a shelf lifetime of several months. The simple SPbased fabrication paradigm demonstrated in this thesis expands the possibilities for the development of advanced simple as well as multi-component oxide semiconductors far beyond those accessible by traditional deposition methods such as sputtering. Furthermore, it offers unprecedented processing scalability hence making it attractive for the manufacturing of future ubiquitous oxide electronics

Flexible Electronics Based on Solution Processable Organic Semiconductors and Colloidal Semiconductor Nanocrystals

Solution-processable semiconductors hold great potential for the large-area, low-cost fabrication of flexible electronics. Recent advances in flexible electronics have introduced new functional devices such as light-weight displays and conformal sensors. However, key challenges remain to develop flexible devices from emerging materials that use simple fabrication processes and have high-performance. In this thesis, we first use a solution-processable organic semiconductor to build field-effect transistors on large-area plastic with mobility of 0.1 cm^2/Vs. Combined with passive components, we are able to build voltage amplifiers to capture few mV amplitude bio-signals. This work provides a proof of concept on applying solution processable materials in flexible circuits. In the second part of the thesis, we introduce colloidal CdSe nanocrystals (NCs) as solution-processable inks of semiconductor thin film devices. By strongly coupling and doping the CdSe NC thin films, we demonstrate high-performance, flexible nanocrystal field-effect transistors (NC-FETs) with mobility greater than 20 cm^2/Vs under 2V supply. Using these NC-FETs as building blocks, we demonstrate the first flexible nanocrystal integrated circuits (NCICs) with switching speed of 600 µsec. To design reliable integrated circuits with low-noise, we characterize the flicker noise amplitude and origin. We find the figure of merit for noise, the Hooge parameter, to be 3 x 10^-2 for CdSe NC-FETs, comparable to other emerging solution processable organic semiconductors and promising for low-noise circuit applications.As most of NCs are reactive and their devices tend to degrade in air, we develop processes that allow manipulation of the NCs in ambient atmosphere without compromising device performance. These processes open up opportunities for NC-based devices to be fabricated over large area using photolithography. By scaling the devices and reducing device parasitics, we are able to fabricate hundreds of NC-FETs on wafer-scale substrates and integrate them as circuits. We demonstrate voltage amplifiers with bandwidths of a few kHz and ring-oscillators with a stage delay of 3 µsec. We also show functional NCICs NOR and NAND logic. This thesis demonstrates the use of colloidal NCs to realize flexible, large-area circuits and the feasibility of more advanced analog and digital NCICs built on flexible substrates for various applications

Novel solution processable dielectrics for organic and graphene transistors

In this thesis we report the development of a range of high-performance thin-film transistors utilising different solution processable organic dielectrics grown at temperatures compatible with inexpensive substrate materials such as plastic. Firstly, we study the dielectric properties and application of a novel low-k fluoropolymer dielectric, named Hyflon AD (Solvay). The orthogonal nature of the Hyflon formulation, to most conventional organic semiconductors, allows fabrication of top-gate transistors with optimised semiconductor/dielectric interface. When used as the gate dielectric in organic transistors, this transparent and highly water-repellent polymer yields high-performance devices with excellent operating stability. In the case of top-gate organic transistors, hole and electron mobility values close to or higher than 1 cm2/Vs, are obtained. These results suggest that Hyflon AD is a promising candidate for use as dielectric in organic and potentially hybrid electronics. By taking advantage of the non-reactive nature of the Hyflon AD dielectric, the p-doping process of an organic blend semiconductor using a molybdenum based organometallic complex as the molecular dopant, has also been investigated for the first time. Although the much promising properties of Hyflon AD were demonstrated, the resulting transistors need, however, to be operated at high voltages typically in the range of 50-100 V. The latter results to a high power consumption by the discrete transistors as well as the resulting integrated circuits. Therefore, reduction in the operating voltage of these devices is crucial for the implementation of the technology in portable battery-operated devices. Our approach towards the development of low-voltage organic transistors and circuits explored in this work focused on the use of self-assembled monolayer (SAM) organics as ultra-thin gate dielectrics. Only few nanometres thick (2-5 nm), these SAM dielectrics are highly insulating and yield high geometrical capacitances in the range 0.5 - 1 μF/cm2. The latter has enabled the design and development of organic transistors with operating voltages down to a few volts. Using these SAM nanodielectrics high performance transistors with ambipolar transport characteristics have also been realised and combined to form low-voltage integrated circuits for the first time. In the final part of this thesis the potential of Hyflon AD and SAM dielectrics for application in the emerging area of graphene electronics, has been explored. To this end we have employed chemical vapour deposited (CVD) graphene layers that can be processed from solution onto the surface of the organic dielectric (Hyflon AD, SAM). By careful engineering of the graphene/dielectric interface we were able to demonstrate transistors with improved operating characteristics that include; high charge carrier mobility (~1400 cm2/Vs), hysteresis free operation, negligible unintentional doping and improved reliability as compared to bare SiO2 based devices. Importantly, the use of SAM nanodielectrics has enabled the demonstration of low voltage (<|1.5| V) graphene transistors that have been processed from solution at low temperature onto flexible plastic substrates. Graphene transistors with tuneable doping characteristics were also demonstrated by taking advantage of the SAM’s flexible chemistry and more specifically the type of the chemical SAM end-group employed. Overall, the work described in this thesis represents a significant step towards flexible carbon-based electronics where large-volume and low-temperature processing are required

Thin‐Film Transistors for Large Area Opto/Electronics

The present work addresses several issues in the field of organic and transparent electronics. One of them is the prevailing high power consumption in state-of-the-art organic field-effect transistors (OFETs). A possible solution could be the implementation of complementary, rather than unipolar logic, but this development is currently inhibited by a distinct lack of high performance electron transporting (n-channel) OFETs. Here, the issue is addressed by investigating a series of solution processable n-channel fullerene molecules in combination with optimized transistor architectures. Furthermore, the trend towards complementary circuit design could be facilitated by employing ambipolar organic semiconductors, such as squaraine molecules or polymer/fullerene blends. These materials can fill the role of p- or n-channel semiconductors and enable the facile implementation of power saving complementary-like logic, eliminating the cost-intensive patterned deposition of discrete p-and n-channel transistors. Alternatively, a patterning method for organic materials adapted from standard photolithography is discussed. Furthermore, ambipolar FETs are found to be capable of light sensing at wavelength of 400-1000 nm. Hence their use in low-cost, organic based optical sensor arrays can be envisioned. Another strategy to reduce the power consumption and operating voltages of OFETs is the use of ultra-thin, self-assembled molecular gate dielectrics, such as alkyl-phosphonic acid molecules. Based on this approach solution processed n- and p-channel OFETs and a complementary organic inverter circuit are demonstrated, which operate at less than 2 Volts. Finally, transparent oxide semiconductors are investigated for use in thin-film transistors. Titanium dioxide (TiO2) and zinc oxide (ZnO) films are deposited by means of a low-cost large area compatible spray pyrolysis technique. ZnO transistors exhibit high electron mobility of the order of 10 cm2/Vs and stable operation in air at less than 2 Volts. These results are considered significant steps towards the development of organic and transparent large-area optoelectronics

Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs

Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) are well suited for circuit applications that require moderate device performance and low-temperature CMOS-compatible processing below 250°C. Basic logic gate circuits fabricated using ambipolar nc-Si TFTs alone are presented and shown to operate with correct outputs at frequencies of up to 100 kHz. Ring oscillators consisting of nc-Si TFT-based inverters are also shown to operate at above 20 kHz with a supply voltage of 5 V, corresponding to a propagation delay of 5 V for several hours

Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process

An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type semiconductor dinaphtho[2,3-b:2',3'-f] thieno[3,2-b]thiophene were deposited by thermal evaporation. The gate dielectric was deposited in a vacuum roll-to-roll environment at a web speed of 25 m/min by flash-evaporation and subsequent plasma polymerisation of tripropyleneglycol diacrylate (TPGDA). Buffering the TPGDA with a polystyrene layer yields hysteresis-free transistor characteristics with turn-on voltage close to zero. The static transfer characteristic of diode-connected load inverters were also hysteresis-free with maximum gain &gt;2 and noise margin ∼2.5 V. When incorporated into SRAM cells the time-constant for writing data into individual SRAM cells was less than 0.4 ms. Little change occurred in the magnitude of the stored voltages, when the SRAM was powered continuously from a −40 V rail for over 27 h testifying to the electrical stability of the threshold voltage of the individual transistors. Unencapsulated SRAM cells measured two months after fabrication showed no significant degradation after storage in a clear plastic container in normal laboratory ambient