Advances in Laser Materials Processing

Laser processing has become more relevant today due to its fast adaptation to the most critical technological tasks, its ability to provide processing in the most rarefied and aggressive mediums (vacuum conditions), its wide field of potential applications, and the green aspects related to the absence of industrial cutting chips and dust. With the development of 3D production, laser processing has received renewed interest associated with its ability to achieve pointed to high-precision powder melting or sintering. New technologies and equipment, which improve and modify optical laser parameters, contribute to better absorption of laser energy by metals or powder surfaces and allow for multiplying laser power that can positively influence the industrial spread of the laser in mass production and advance the existing manufacturing methods. The latest achievements in laser processing have become a relevant topic in the most authoritative scientific journals and conferences in the last half-century. Advances in laser processing have received multiple awards in the most prestigious competitions and exhibitions worldwide and at international scientific events. The Special Issue is devoted to the most recent achievements in the laser processing of various materials, such as cast irons, tool steels, high entropy alloys, hard-to-remelt materials, cement mortars, and post-processing and innovative manufacturing based on a laser

Tribological Behavior of Functional Surface: Models and Methods

Material loss due to wear and corrosion and high resistance to motion generate high costs. Therefore, minimizing friction and wear is a problem of great importance. This book is focused on the tribological behavior of functional surfaces. It contains information regarding the improvement of tribological properties of sliding elements via changes in surface topography. Tribological impacts of surface texturing depending on the creation of dimples on co-acting surfaces are also discussed. The effects of various coatings on the minimization of friction and wear and corrosion resistance are also studied. Friction can be also reduced by introducing a new oil

Development of III-nitride-based waveguides for application in all-optical integrated circuits at 1.55 [my]m

El desarrollo de una nueva tecnología todo-óptica para el procesado de datos en las futuras redes de telecomunicación está generando un gran interés desde hace una década. Esta tecnología está encaminada al total aprovechamiento del gran ancho de banda que proporciona la fibra óptica, evitando la conversión entre los dominios óptico y eléctrico necesaria en cada nodo de las redes de comunicaciones actuales. Esta nueva tecnología todo-óptica requiere de diferentes componentes ópticos que puedan ser controlados ópticamente. Estos dispositivos se obtienen a partir de distintos materiales semiconductores y se implementan de forma miniaturizada en un circuito todo-óptico integrado operando a 1.55 [my]m, mejorando de esta forma la fiabilidad del sistema y reduciendo su coste. Teniendo en cuenta que los nitruros del grupo III son materiales que han demostrado un gran potencial para aplicaciones en comunicaciones ópticas a 1.55 [my]m, el objetivo de este trabajo es el desarrollo de nuevos dispositivos todo-ópticos basados en éstos para su futura implementación en circuitos fotónicos integrados ultrarrápidos operando a longitudes de onda de telecomunicación. Durante esta Tesis se han desarrollado varios dispositivos de guía de onda basados en diferentes estructuras de nitruros del grupo III sobre substratos de zafiro y funcionando a 1.55 [my]m. En primer lugar, se han optimizado diferentes guías de onda ópticas basadas en pozos y puntos cuánticos de GaN/AlN para trabajar como absorbentes saturables a través de sus transiciones intersubbanda. Estas guías de onda podrían utilizarse en procesos de conmutación todo-óptica. En segundo lugar, se ha optimizado el crecimiento de AlN por sputtering de radiofrecuencia permitiendo su uso para la fabricación de guías de onda pasivas. El comportamiento óptico lineal de las guías de AlN por sputtering muestra su idoneidad para actuar como interconectores pasivos de bajo coste en un circuito todo-óptico integrado. Por último, se han optimizado dos tipos de guías de onda basadas en InN por sputtering para funcionar como absorbentes saturables inversos mediante procesos de absorción de dos fotones. La respuesta óptica no lineal de ambas guías abre la posibilidad de utilizar estos dispositivos para aplicaciones en limitación todo-óptica a longitudes de onda de telecomunicación

Investigation of the Surface Mechanical Properties of Single Crystal ZnO by Nanoindentation

Mechanical and Aerospace Engineerin

THE POST-PROCESSING OF ADDITIVE MANUFACTURED POLYMERIC AND METALLIC PARTS

The traditional manufacturing industry has been revolutionized with the introduction of additive manufacturing which is based on layer-by-layer manufacturing. Due to these tool-free techniques, complex shape manufacturing becomes much more convenient in comparison to traditional machining. However, additive manufacturing comes with its inherent process characteristics of high surface roughness, which in turn effect fatigue strength as well as residual stresses. Therefore, in this paper, common post-processing techniques for additive manufactured (AM) parts were examined. The main objective was to analyze the finishing processes in terms of their ability to finish complicated surfaces and their performance were expressed as average surface roughness (Sa and Ra). The techniques were divided according to the materials they applied to and the material removal mechanism. It was found that chemical finishing significantly reduces surface roughness and can be used to finish parts with complicated geometry. Laser finishing, on the other hand, cannot be used to finish intricate internal surfaces. Among the mechanical abrasion methods, abrasive flow finishing shows optimum results in terms of its ability to finish complicated freeform cavities with improved accuracy for both polymer and metal parts. However, it was found that, in general, most mechanical abrasion processes lack the ability to finish complex parts. Moreover, although most of post-processing methods are conducted using single finishing processes, AM parts can be finished with hybrid successive processes to reap the benefits of different post-processing techniques and overcome the limitation of individual process

Formation and Characterization of Columnar Porous SiC Fabricated by Photo-electrochemical Etching

The major part of this work concentrates on the details of the physical aspects of the columnar pore formation in the Si-face (0001), the C-face (000-1), and the a-face (11-20) of n-type 4H and 6H SiC samples using photoelectrochemical etching. The electrochemical etching of p-type 4H and 6H crystals is also illustrated. In Si-face n-type 4H and 6H SiC, the columnar pores are about one ¦Ìm in diameter. The formed porous layer is of high porosity and thus fragile. The formation of a hybrid partial columnar porous structure to improve the mechanical strength is discussed in detail. Nano-columnar pores are successfully fabricated in C-face n-type 4H and 6H SiC. The self-organized columnar pores have diameters of about 20 nm. The interpore spacing from center to center is between 40-60 nm depending on the etching conditions. The porous layer can be as thick as 200 ¦Ìm. The porosity of the porous structure is about 0.1. Systematic studies on the experimental control parameters, such as voltage, reaction temperature, surface roughness, HF concentration, and doping concentration, have been performed and are explained in detail. The formation mechanisms are discussed extensively based on crystallographic aspects, diffusion limited aggregation, impedance spectroscopy, voltammetry, equivalent circuits, and semiconductor/electrolyte interface (similar to a Schottky semiconductor/metal interface) electrochemistry. The 20 nm diameter nano-columnar pore formation has also been observed on the a-face n-type 6H SiC. The experimental observations are recorded and the voltage effects on the formed porous structure are discussed. In the electrochemical etching of p-type 4H and 6H SiC, the electrochemical polishing, porosity dependence on the current density, porosity variation during the etching and doping effects on the porous formation are discussed. The five appendices contain information about: (1) my publication list, (2) technical notes about the fabrication of porous SiC, (3) technical notes about the fabrication of porous Al2O3, (4) operation procedures and technical notes about the mechanical polishing of SiC, and (5) operation procedures and technical notes about the Varian 936-60 Leak Detector and the E-beam Evaporator in our laboratory

Nano to micrometric grain sized CVD diamond for turning hard and abrasive materials

Doutoramento em Ciência e Engenharia de MateriaisO presente trabalho consistiu no desenvolvimento de ferramentas de corte de diamante CVD (Chemical Vapour Deposition) obtido na forma de revestimento em materiais cerâmicos à base de nitreto de silício monolítico (Si3N4) ou compósitos nitreto de silício-nitreto de titânio (Si3N4-TiN). A adição de TiN acima de 23 vol.% conferiu conductividade eléctrica ao compósito, na ordem de 1×10-1 W−1.cm-1, possibilitando a sua maquinagem por electroerosão. Duas técnicas foram utilizadas para o crescimento dos filmes de diamante: deposição química em fase vapor por plasma gerado por microondas, MPCVD (Microwave Plasma Chemical Vapour Deposition), e por filamento quente, HFCVD (Hot Filament Chemical Vapour Deposition). Previamente os substratos cerâmicos sofreram uma preparação superficial por diversos métodos: rectificação por mós diamantadas; polimento com suspensão de diamante (15μm); ataque da superfície por plasma de CF4; riscagem manual ou por ultra-sons com pó de diamante (0.5-1.0 μm). A caracterização das ferramentas revestidas envolveu: o estudo da qualidade e tensões residuais dos filmes de diamante a partir da difracção dos raios X e espectroscopia Raman; a análise da respectiva microestrutura e medida da espessura por microscopia electrónica de varrimento (SEM); a determinação dos valores de rugosidade dos filmes por microscopia de força atómica (AFM); e a avaliação da adesão dos filmes aos substratos por indentação com penetrador Brale. Foram obtidos filmes com granulometria que variaram da gama do diamante nanométrico (< 100 nm) até ao micrométrico convencional (3-12 μm), com consequências na rugosidade superficial do filme. Os filmes de diamante CVD apresentaram espessuras de 15 a 150μm. Os revestimentos apresentaram elevada adesão ao substrato, sendo que o melhor resultado foi atingido pelo diamante micrométrico, suportando um limite de carga aplicada de até 1600 N. O estudo do comportamento em serviço das ferramentas foi efectuado na operação de torneamento de metal duro (WC-Co) e de eléctrodos de grafite, com medição de forças de corte em tempo real por meio de um dinamómetro. Os ensaios foram realizados num torno CNC, em ambiente industrial, na empresa Durit (Albergaria-a-Velha), produtora de metal duro. Os modos de desgaste das ferramentas foram avaliados por meio de observação em microscopia óptica e electrónica de varrimento e o grau de acabamento da superfície maquinada por rugosimetria. A influência destes parâmetros foi estudada em termos das forças envolvidas em operações de torneamento, desgaste das ferramentas e do acabamento conferido à peça maquinada. Os melhores resultados do torneamento de metal duro foram atingidos pelas ferramentas com geometria de aresta em quina-viva, recobertas com os filmes de diamante de 100-200 nm de tamanho de grão, correspondentes às menores forças de corte (<150N), melhor qualidade da peça maquinada (rugosidade aritmética igual a 0,2 μm) e menor desgaste (flanco igual a 110μm). No torneamento de eléctrodos de grafite, as forças de corte foram baixas (< 20N), sendo que o principal modo de desgaste foi a formação de cratera na superfície de ataque (valor máximo igual a 22 μm). O fio da aresta de corte permaneceu inalterado (devido ao mínimo desgaste de flanco), sendo que as diferentes granulometrias do diamante não tiveram influência significativa no comportamento geral das ferramentas.This work consisted on the development of CVD (Chemical Vapour Deposition) diamond cutting tools directly deposited on monolithic silicon nitride (Si3N4) based ceramics and silicon nitride-titanium nitride composites (Si3N4-TiN). A TiN content higher than 23 vol.% confers electric conductivity to the composite in the order of 1×10-1 W−1.cm-1, making possible its machinability by means of electrodischarge machining. Two techniques were used for diamond growth: Microwave Plasma Chemical Vapour Deposition (MPCVD) and Hot Filament Chemical Vapour Deposition (HFCVD). The substrate pre-treatment steps prior to diamond deposition were: grinding with diamond wheels; polishing with diamond suspension (15μm); chemical etching with CF4 plasma; manual scratching or ultrasonic bath scratching with diamond powder (0.5-1.0 μm) for seeding purposes. The diamond cutting tools characterization involved: study of the quality and the residual stress of the films by X ray diffraction and Raman spectroscopy; analysis of respective film microstructure and measurement of film thickness by scanning electron microscopy (SEM); quantification of film surface roughness by atomic force microscopy (AFM); evaluation of adhesion strength of the thin films to Si3N4 substrate by the indentation technique with a Brale indenter. The grain size of the films varied from nanometric (< 100 nm) to conventional micrometric (3-12 μm), therefore giving different surface roughness. The CVD diamond film thickness was in the range of (15-150 μm). The diamond films presented a high adhesion level to the Si3N4 ceramic substrates, the best results being achieved by the micrometric grain sized film, which undergo a normal load of until 1600N. The study of the cutting tool behaviour was performed in turning operations of hardmetal (WC-Co) and graphite electrodes, by real-time acquisition of the cutting forces using a dynamometer. The turning operations were carried out in a CNC lathe, at industrial environment of a hardmetal producer company, Durit (Albergaria-a-Velha). The wear modes of the tested cutting tools were analysed by optical and electronic microscopy observations and the finishing quality of the machined workpiece was measured by surface roughness measurements. The influence of these parameters was studied in terms of the cutting forces developed during turning operations, of tool wear and of the finishing quality of the machined workpieces. The best results attained in hardmetal turning were achieved by the cutting tools with sharp edges, covered with diamond films of 100-200 nm of grain size, which presented the lowest cutting forces (<150N), the best workpiece surface quality (Ra=0.2μm) and the lowest flank wear (110μm). In graphite turning, the cutting forces were very low (<20N) and the main wear mode was the crater one on the rake face (maximum value of 22μm). The cutting edge remained almost intact (due to the minimum flank wear) while the different diamond grain sizes did not have a significant influence on the overall cutting behaviour

Gallium and titanium diffused optical waveguide devices in sapphire

This thesis describes new methods to realise an integrated Ti:Sapphire laser using thermal ionic diffusion. Passive and active waveguides were fabricated by thermal diffusion of gallium and titanium ions in sapphire.Theoretical simulations were established which describe the potential of planar Ti:Sapphire waveguide lasers and intracavity wavelength selection devices. A diffusion study of gallium, titanium and gallium/titanium co-doping is presented; the diffusion coefficient of gallium ions in sapphire was calculated to be 3.3x10-17 m2s-1 at 16000 °C and the diffusion coefficient of titanium ions in sapphire at 16000 °C was found to be 1.7x10-15 m2s-1. Planar Ga:Sapphire passive waveguides were realised by thermal diffusion of gallium ions. The refractive index of sapphire at 800nm is approximately 1.766 and the index change induced by gallium doping was found to be up to 6x10-3 and the mode sizes of the waveguides were as small as 1µm at 488nm. A fabrication procedure based on SU-8 photolithography and ion beam milling was developed for micromachining the surface of sapphire. Using this fabrication technique Ga:Sapphire ridge waveguides were fabricated by diffusion of gallium and exhibited mode sizes as small as 2µm at 633nm. Using the same fabrication technique the realisation of the first Ti-diffused sapphire ridge waveguide lasers is reported. Finally, the fabrication of sapphire optical circuits using titanium and gallium co-doping is described and fluorescence characterisation of these waveguides is given