117 research outputs found

    An economical semi-analytical orbit theory for micro-computer applications

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    An economical algorithm is presented for predicting the position of a satellite perturbed by drag and zonal harmonics J sub 2 through J sub 4. Simplicity being of the essence, drag is modeled as a secular decay rate in the semi-axis (retarded motion); with the zonal perturbations modeled from a modified version of the Brouwers formulas. The algorithm is developed as: an alternative on-board orbit predictor; a back up propagator requiring low energy consumption; or a ground based propagator for microcomputer applications (e.g., at the foot of an antenna). An O(J sub 2) secular retarded state partial matrix (matrizant) is also given to employ with state estimation. The theory was implemented in BASIC on an inexpensive microcomputer, the program occupying under 8K bytes of memory. Simulated trajectory data and real tracking data are employed to illustrate the theory's ability to accurately accommodate oblateness and drag effects

    Data processing machines and you: [pattern speech]

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    https://egrove.olemiss.edu/aicpa_guides/1499/thumbnail.jp

    A review of research in business data processing education: studies completed prior to 1967

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    Analytical and numerical modeling, fabrication and RF measurement techniques for RF planar micro-inductors on silicon

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    In mixed signal integrated circuits, the role of passives has become increasingly important. In particular, the characterization and implementation of an embedded planar coil inductor presents several challenges. The present work is a comprehensive study of micro inductors that includes analytical modeling, numerical simulation, in-house fabrication processes, circuit implementation in silicon, and RF measurement techniques. Although the inductor is widely integrated on silicon, there is still a need for closed form expressions for inductance and the quality factor. In addition, amongst the numerous commercially available simulation packages, there still is a need to identify the tool that best suits the design and implementation of micro-inductors on silicon. In this work, an analytical model is presented based on a desegmentation technique, which removes segments from a rectangular cavity to create the inductor coil geometry. Defining the Green\u27s function for each segment, the boundary conditions are applied to obtain a closed form expression for the Z matrix from which the inductance and Q have been obtained. For a numerical modeling, Ansoft\u27s High Frequency Structure Simulator (HFSS) is chosen as the preferred tool for an accurate and frequency dependent analysis. Several inductor geometrics have been modeled analytically and have been validated with HFSS where in each case there is excellent agreement. The model has also been successfully applied to irregularly shaped power planes that commonly occur in mixed signal circuits. The present work has established a fabrication process for micro-inductors using technologies available in the Semiconductor and Microsystems Fabrication Laboratory (SMFL) at RIT. A fabrication process has been developed to integrate inductors, transformers, capacitors, and PMOS (P-type Metal Oxide Semiconductor) transistors. Inductors and transformers have been made from copper and imbedded in a thick PECVD SiOโ‚‚ film. The process allows for an optional aluminum ground plane under the copper structures. Capacitors have been formed using the gate oxide as a dielectric and heavily doped silicon and aluminum as the electrodes. PMOS transistors have been implemented to control two varieties of LC tank circuits (parallel and series). The final contribution of the present work is establishing RF test methods for measuring inductance, and calculating the quality factor (Q). Experimental RF testing is performed using high frequency Cascade Microtech ground-signal-ground (GSG) probes and the 9100 probe station. Data has been captured using an Agilent 8363B network analyzer with a frequency range from 10 MHz to 40 GHz. A calibration procedure has been developed for a full two port measurement and a methodology has been optimized for measuring the impedance [Z] matrix and the scattering [S] matrix. The imput impedance is extracted from the [Z] matrix and Q has been calculated. There is excellent agreement between experimental results, numerical results from HFSS, and analytical results from the desegmentation technique
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