Low-power, 10-Gbps 1.5-Vpp differential CMOS driver for a silicon electro-optic ring modulator

We present a novel driver circuit enabling electro-optic modulation with high extinction ratio from a co-designed silicon ring modulator. The driver circuit provides an asymmetric differential output at 10Gbps with a voltage swing up to 1.5V(pp) from a single 1.0V supply, maximizing the resonance-wavelength shift of depletion-type ring modulators while avoiding carrier injection. A test chip containing 4 reconfigurable driver circuits was fabricated in 40nm CMOS technology. The measured energy consumption for driving a 100fF capacitive load at 10Gbps was as low as 125fJ/bit and 220fJ/bit at 1V(pp) and 1.5V(pp) respectively. After flip-chip integration with ring modulators on a silicon-photonics chip, the power consumption was measured to be 210fJ/bit and 350fJ/bit respectively

Energy challenges for ICT

The energy consumption from the expanding use of information and communications technology (ICT) is unsustainable with present drivers, and it will impact heavily on the future climate change. However, ICT devices have the potential to contribute signi - cantly to the reduction of CO2 emission and enhance resource e ciency in other sectors, e.g., transportation (through intelligent transportation and advanced driver assistance systems and self-driving vehicles), heating (through smart building control), and manu- facturing (through digital automation based on smart autonomous sensors). To address the energy sustainability of ICT and capture the full potential of ICT in resource e - ciency, a multidisciplinary ICT-energy community needs to be brought together cover- ing devices, microarchitectures, ultra large-scale integration (ULSI), high-performance computing (HPC), energy harvesting, energy storage, system design, embedded sys- tems, e cient electronics, static analysis, and computation. In this chapter, we introduce challenges and opportunities in this emerging eld and a common framework to strive towards energy-sustainable ICT

Silicon optical modulators

Optical technology is poised to revolutionise short reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such interconnect is the optical modulator. Modulators have been improved dramatically in recent years. Most notably the bandwidth has increased from the MHz to the multi GHz regime in little more than half a decade. However, the demands of optical interconnect are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimising metrics such as the energy per bit, and device footprint, whilst maximising bandwidth and modulation depth are non trivial demands. All of this must be achieved with acceptable thermal tolerance and optical spectral width, using CMOS compatible fabrication processes. Here we discuss the techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future

Temperature Evaluation of NoC Architectures and Dynamically Reconfigurable NoC

Advancements in the field of chip fabrication led to the integration of a large number of transistors in a small area, giving rise to the multi–core processor era. Massive multi–core processors facilitate innovation and research in the field of healthcare, defense, entertainment, meteorology and many others. Reduction in chip area and increase in the number of on–chip cores is accompanied by power and temperature issues. In high performance multi–core chips, power and heat are predominant constraints. High performance massive multicore systems suffer from thermal hotspots, exacerbating the problem of reliability in deep submicron technologies. High power consumption not only increases the chip temperature but also jeopardizes the integrity of the system. Hence, there is a need to explore holistic power and thermal optimization and management strategies for massive on–chip multi–core environments. In multi–core environments, the communication fabric plays a major role in deciding the efficiency of the system. In multi–core processor chips this communication infrastructure is predominantly a Network–on–Chip (NoC). Tradition NoC designs incorporate planar interconnects as a result these NoCs have long, multi–hop wireline links for data exchange. Due to the presence of multi–hop planar links such NoC architectures fall prey to high latency, significant power dissipation and temperature hotspots. Networks inspired from nature are envisioned as an enabling technology to achieve highly efficient and low power NoC designs. Adopting wireless technology in such architectures enhance their performance. Placement of wireless interconnects (WIs) alters the behavior of the network and hence a random deployment of WIs may not result in a thermally optimal solution. In such scenarios, the WIs being highly efficient would attract high traffic densities resulting in thermal hotspots. Hence, the location and utilization of the wireless links is a key factor in obtaining a thermal optimal highly efficient Network–on–chip. Optimization of the NoC framework alone is incapable of addressing the effects due to the runtime dynamics of the system. Minimal paths solely optimized for performance in the network may lead to excessive utilization of certain NoC components leading to thermal hotspots. Hence, architectural innovation in conjunction with suitable power and thermal management strategies is the key for designing high performance and energy–efficient multicore systems. This work contributes at exploring various wired and wireless NoC architectures that achieve best trade–offs between temperature, performance and energy–efficiency. It further proposes an adaptive routing scheme which factors in the thermal profile of the chip. The proposed routing mechanism dynamically reacts to the thermal profile of the chip and takes measures to avoid thermal hotspots, achieving a thermally efficient dynamically reconfigurable network on chip architecture

Indium phosphide based membrane photodetector for optical interconnects on silicon

We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing