Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.Agencia Estatal de Investigación PID2019-107258RB-C32Unión Europea PID2019-107258RB-C3

Energy-efficient amplifiers based on quasi-floating gate techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.This research was funded by AEI/FEDER, grant number PID2019-107258RB-C32

Performance enhancement in the desing of amplifier and amplifier-less circuits in modern CMOS technologies.

In the context of nowadays CMOS technology downscaling and the increasing demand of high performance electronics by industry and consumers, analog design has become a major challenge. On the one hand, beyond others, amplifiers have traditionally been a key cell for many analog systems whose overall performance strongly depends on those of the amplifier. Consequently, still today, achieving high performance amplifiers is essential. On the other hand, due to the increasing difficulty in achieving high performance amplifiers in downscaled modern technologies, a different research line that replaces the amplifier by other more easily achievable cells appears: the so called amplifier-less techniques. This thesis explores and contributes to both philosophies. Specifically, a lowvoltage differential input pair is proposed, with which three multistage amplifiers in the state of art are designed, analysed and tested. Moreover, a structure for the implementation of differential switched capacitor circuits, specially suitable for comparator-based circuits, that features lower distortion and less noise than the classical differential structures is proposed, an, as a proof of concept, implemented in a ΔΣ modulator

A Four-stage Power and Area Efficient OTA with 30 × (400pf – 12nf) Capacitive Load Drive Range

Multistage operational transconductance amplifier (OTA) has been a major research focus as a solution to high DC Gain high Gain Bandwidth and wide voltage swing requirement on sub-micron devices. These system requirements, in addition to ultra-large capacitive load drivability (nF-range load capacitor), are useful in applications including LCD drivers, low dropout (LDO) linear regulators, headphone drivers, etc. The major drawback of multistage OTAs is the stability concerns since each added stage introduces low frequency poles. Numerous compensation schemes for three stage OTAs have been proposed in the past decade with only a few four stage OTA in literature. The proposed design is a four stage OTA which uses an active zero block (AZB) to provide left half plane (LHP) zero to help with phase degradation. AZB is embedded in the second stage ensuring reuse of existing block hence providing area and power savings. This design also uses single miller capacitor in the outer loop which ensures improved speed performance with minimal area overhead. A very reliable slew helper is implemented in this design to help with the large signal performance. The slew helper is only operational in the events slewing and does not affect the small signal performance. The proposed design achieves a DC gain of 114 dB, GBW > 1.77MHz and PM > 46.9⁰ for capacitive load ranging from 400pF–12nF (30x) which is the highest recorded range in literature for these type of compensation. It does this by consuming a total power of 143.5µW and an area of 0.007mm^2

A Methodology to Derive a Symbolic Transfer Function for Multistage Amplifiers

In this paper, a simple while effective methodology to calculate the symbolic transfer function of a multistage amplifier with frequency compensation is proposed. Three general amplifier models are introduced and analyzed, which represent basic topologies found in the literature. For these amplifier models, the symbolic transfer function is derived and specific strategies for the zero and non-dominant pole expressions are presented. The methodology is suited for hand calculations and yields accurate results while offering more intuition into the operation of the widely adopted frequency compensation solutions discussed in the literature. The effectiveness of the proposed approach is validated through various typical cases of study

Super-gain-boosted AB-AB fully differential Miller op-amp with 156dB open-loop gain and 174MV/V MHZ pF/uW figure of merit in 130nm CMOS technology

A fully differential Miller op-amp with a composite input stage using resistive local common-mode feedback and regulated cascode transistors is presented here. High gain pseudo-differential auxiliary amplifiers are used to implement the regulated cascode transistors in order to boost the output impedance of the composite input stage and the open-loop gain of the op-amp. Both input and output stages operate in class AB mode. The proposed op-amp has been simulated in a 130nm commercial CMOS process technology. It operates from a 1.2V supply and has a close to rail-to-rail differential output swing. It has 156dB DC open-loop gain and 63MHz gain-bandwidth product with a 30pF capacitive load. The op-amp has a DC open-loop gain figure of merit FOMAOLDC of 174 (MV/V) MHz pF/uW and large-signal figure of merit FOMLS of 3(V/us) pF/uW.This work was supported in part by the Spanish Government Agencia Estatal de Investigación (AEI) under Grant TEC2016-80396-C2, in part by the Consejería de Economía y Conocimiento of Junta de Andalucía under Grant P18-FR-4317 (both projects received support from the Fondo Europeo de Desarrollo Regional (FEDER)), and in part by the Consejo Nacional de Ciencia y Tecnologia (CONACyT) under Grant A1-S-43214

Super-Gain-Boosted AB-AB Fully Differential Miller Op-Amp With 156dB Open-Loop Gain and 174MV/V MHZ pF/µW Figure of Merit in 130nm CMOS Technology

Article number 9400400A fully differential Miller op-amp with a composite input stage using resistive local common-mode feedback and regulated cascode transistors is presented here. High gain pseudo-differential auxiliary amplifiers are used to implement the regulated cascode transistors in order to boost the output impedance of the composite input stage and the open-loop gain of the op-amp. Both input and output stages operate in class AB mode. The proposed op-amp has been simulated in a 130nm commercial CMOS process technology. It operates from a 1.2V supply and has a close to rail-to-rail differential output swing. It has 156dB DC open-loop gain and 63MHz gain-bandwidth product with a 30pF capacitive load. The op-amp has a DC open-loop gain figure of merit FOMAOLDC of 174 (MV/V) MHz pF/µW and large-signal figure of merit FOMLS of 3(V/µs) pF/µW.Consejería de Economía y Conocimiento of Junta de Andalucía P18-FR-4317Consejo Nacional de Ciencia y Tecnología (España) A1-S-43214Agencia Estatal de Investigación TEC2016-80396-C