A Radiation Tolerant 4.8 Gb/s Serializer for the Giga-Bit Transceiver

This paper describes the design of a full-custom 120:1 data serializer for the GigaBit Transceiver (GBT) which has been under development for the LHC upgrade (SLHC). The circuit operates at 4.8 Gb=s and is implemented in a commercial 130 nm CMOS technology. The serializer occupies an area of 0.6 mm2 and its power consumption is 300 mW. The paper focuses on the techniques used to achieve radiation tolerance and on the simulation method used to estimate the sensitivity to single event transient

Design of Analog-to-Digital Converters with Embedded Mixing for Ultra-Low-Power Radio Receivers

In the field of radio receivers, down-conversion methods usually rely on one (or more) explicit mixing stage(s) before the analog-to-digital converter (ADC). These stages not only contribute to the overall power consumption but also have an impact on area and can compromise the receiver’s performance in terms of noise and linearity. On the other hand, most ADCs require some sort of reference signal in order to properly digitize an analog input signal. The implementation of this reference signal usually relies on bandgap circuits and reference buffers to generate a constant, stable, dc signal. Disregarding this conventional approach, the work developed in this thesis aims to explore the viability behind the usage of a variable reference signal. Moreover, it demonstrates that not only can an input signal be properly digitized, but also shifted up and down in frequency, effectively embedding the mixing operation in an ADC. As a result, ADCs in receiver chains can perform double-duty as both a quantizer and a mixing stage. The lesser known charge-sharing (CS) topology, within the successive approximation register (SAR) ADCs, is used for a practical implementation, due to its feature of “pre-charging” the reference signal prior to the conversion. Simulation results from an 8-bit CS-SAR ADC designed in a 0.13 μm CMOS technology validate the proposed technique

TOPOLOGY, ANALYSIS, AND CMOS IMPLEMENTATION OF SWITCHED-CAPACITOR DC-DC CONVERTERS

This review highlights various design and realization aspects of three commonly used charge pump topologies, namely, the linear, exponential, and the Fibonacci type of charge pumps. We shall outline the new methods developed recently for analyzing the steady and dynamic performances of these circuits. Some practical issues for the CMOS implementation of these charge pump structures will be critically discussed. Finally, some conventional voltage regulation methods for maintaining a stable output under a large range of loading current and supply voltage fluctuations will be proposed

Characterization of silicon detectors for studies of deep sub-barrier heavy-ion fusion by coincidences with the AGATA gamma-spectrometer

openThis Master Thesis aims to provide better understanding of deep sub-barrier heavy ion fusion by proposing a combined set-up of Agata gamma-spectrometer and silicon detectors. The fusion events will be identified by coincidences between the prompt γ-rays and the light charged particles (p, α) evaporated from the compound nucleus. This is motivated by recent experiments involving the fusion of 12C + 24Mg where the measured excitation function clearly showed evidence of the "hindrance" phenomenon. Discriminating between the various models interpreting the observed S-factor maximum, at lower energies than the ones already available, would imply the measurement of cross sections below the microbarn level. The silicon detectors employed in this thesis were: two double-sided annular detectors and one strip detector. They were characterised by means of correlations between the the applied voltage and the leakage current , alpha particle energy resolution and spatial resolution. The detectors fulfilled the required condition for a wide range of nuclear physics experiments. The annular detectors were used in the measurement of light particles produced by a proton beam impinging on a cryogenic helium target. Overall, this work has offered a better understanding of the new set of silicon detectors and it showed their viability to perform measurements of light charged particles on in-beam fusion experiments.This Master Thesis aims to provide better understanding of deep sub-barrier heavy ion fusion by proposing a combined set-up of Agata gamma-spectrometer and silicon detectors. The fusion events will be identified by coincidences between the prompt γ-rays and the light charged particles (p, α) evaporated from the compound nucleus. This is motivated by recent experiments involving the fusion of 12C + 24Mg where the measured excitation function clearly showed evidence of the "hindrance" phenomenon. Discriminating between the various models interpreting the observed S-factor maximum, at lower energies than the ones already available, would imply the measurement of cross sections below the microbarn level. The silicon detectors employed in this thesis were: two double-sided annular detectors and one strip detector. They were characterised by means of correlations between the the applied voltage and the leakage current , alpha particle energy resolution and spatial resolution. The detectors fulfilled the required condition for a wide range of nuclear physics experiments. The annular detectors were used in the measurement of light particles produced by a proton beam impinging on a cryogenic helium target. Overall, this work has offered a better understanding of the new set of silicon detectors and it showed their viability to perform measurements of light charged particles on in-beam fusion experiments

Implementation and Characterisation of Monolithic CMOS Pixel Sensors for the CLIC Vertex and Tracking Detectors

Different CMOS technologies are being considered for the vertex and tracking layers of the detector at the proposed high-energy e$^{+}$e$^{−}$ Compact Linear Collider (CLIC). CMOS processes have been proven to be suitable for building high granularity, large area detector systems with low material budget and low power consumption. An effort is put on implementing detectors capable of performing precise timing measurements. Two Application-Specific Integrated Circuits (ASICs) for particle detection have been developed in the framework of this thesis, following the specifications of the CLIC vertex and tracking detectors. The process choice was based on a study of the features of each of the different available technologies and an evaluation of their suitability for each application. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a pixelated detector chip designed to be used in capacitively coupled assemblies with the CLICpix2 readout chip, in the framework of the vertex detector at CLIC. The chip comprises a matrix of 128×128 square pixels with 25 µm pitch. A commercial 180 nm High-Voltage (HV) CMOS process was used for the C3PD design. The charge is collected with a large deep N-well, while each pixel includes a preamplifier placed on top of the collecting electrode. The C3PD chip was produced on wafers with different values for the substrate resistivity (∼ 20, 80, 200 and 1000 Ωcm) and has been extensively tested through laboratory measurements and beam tests. The design details and characterisation results of the C3PD chip will be presented. The CLIC Tracker Detector (CLICTD) is a novel monolithic detector chip developed in the context of the silicon tracker at CLIC. The CLICTD chip combines high density, mixed mode circuits on the same substrate, while it performs a fast time-tagging measurement with 10 ns time bins. The chip is produced in a 180 nm CMOS imaging process with a High-Resistivity (HR) epitaxial layer. A matrix of 16×128 detecting cells, each measuring 300 × 30 µm$^{2}$ , is included. A small N-well is used to collect the charge generated in the sensor volume, while an additional deep N-type implant is used to fully deplete the epitaxial layer. Using a process split, additional wafers are produced with a segmented deep N-type implant, a modification that has been simulated to result in a faster charge collection time. Each detecting cell is segmented into eight front-ends to ensure prompt charge collection in the sensor diodes. A simultaneous 8-bit timing and 5-bit energy measurement is performed in each detecting cell. A detailed description of the CLICTD design will be given, followed by the first measurement results

Power management systems based on switched-capacitor DC-DC converter for low-power wearable applications

The highly efficient ultra-low-power management unit is essential in powering low-power wearable electronics. Such devices are powered by a single input source, either by a battery or with the help of a renewable energy source. Thus, there is a demand for an energy conversion unit, in this case, a DC-DC converter, which can perform either step-up or step-down conversions to provide the required voltage at the load. Energy scavenging with a boost converter is an intriguing choice since it removes the necessity of bulky batteries and considerably extends the battery life. Wearable devices are typically powered by a monolithic battery. The commonly available battery such as Alkaline or Lithium-ion, degrade over time due to their life spans as it is limited by the number of charge cycles- which depend highly on the environmental and loading condition. Thus, once it reaches the maximum number of life cycles, the battery needs to be replaced. The operation of the wearable devices is limited by usable duration, which depends on the energy density of the battery. Once the stored energy is depleted, the operation of wearable devices is also affected, and hence it needs to be recharged. The energy harvesters- which gather the available energy from the surroundings, however, have no limitation on operating life. The application can become battery-less given that harvestable energy is sufficiently powering the low-power devices. Although the energy harvester may not completely replace the battery source, it ensures the maximum duration of use and assists to become autonomous and self-sustain devices. The photovoltaic (PV) cell is a promising candidate as a hypothetical input supply source among the energy harvesters due to its smaller area and high power density over other harvesters. Solar energy use PV harvester can convert ambient light energy into electrical energy and keep it in the storage device. The harvested output of PV cannot directly connect to wearable loads for two main reasons. Depending on the incoming light, the harvested current result in varying open-circuit voltage. It requires the power management circuit to deal with unregulated input variation. Second, depending on the PV cell's material type and an effective area, the I-V characteristic's performance varies, resulting in a variation of the output power. There are several works of maximum power point tracking (MPPT) methods that allow the solar energy harvester to achieve optimal harvested power. Therefore, the harvested power depends on the size and usually small area cell is sufficient for micro-watt loads low-powered applications. The available harvested voltage, however, is generally very low-voltage range between 0.4-0.6 V. The voltage ratings of electronics in standard wearable applications operate in 1.8-3 V voltages as described in introduction’s application example section. It is higher than the supply source can offer. The overcome the mismatch voltage between source and supply circuit, a DC-DC boost converter is necessary. The switch-mode converters are favoured over the linear converters due to their highly efficient and small area overhead. The inductive converter in the switch-mode converter is common due to its high-efficiency performance. However, the integration of the inductor in the miniaturised integrated on-chip design tends to be bulky. Therefore, the switched-capacitor approach DC-DC converters will be explored in this research. In the switched-capacitor converter universe, there is plenty of work for single-output designs for various topologies. Most converters are reconfigurable to the different DC voltage levels apart from Dickson and cross-coupled charge pump topologies due to their boosting power stage architecture through a number of stages. However, existing multi-output converters are limited to the fixed gain ratio. This work explores the reconfigurable dual-output converter with adjustable gain to compromise the research gap. The thesis's primary focus is to present the inductor-less, switched-capacitor-based DC-DC converter power management system (PMS) supplied by a varying input of PV energy harvester input source. The PMS should deliver highly efficient regulated voltage conversion ratio (VCR) outputs to low-power wearable electronic devices that constitute multi-function building blocks

STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS

Microelectronic devices and systems have been extensively utilized in a variety of radiation environments, ranging from the low-earth orbit to the ground level. A high-energy particle from such an environment may cause voltage/current transients, thereby inducing Single Event Effect (SEE) errors in an Integrated Circuit (IC). Ever since the first SEE error was reported in 1975, this community has made tremendous progress in investigating the mechanisms of SEE and exploring radiation tolerant techniques. However, as the IC technology advances, the existing hardening techniques have been rendered less effective because of the reduced spacing and charge sharing between devices. The Semiconductor Industry Association (SIA) roadmap has identified radiation-induced soft errors as the major threat to the reliable operation of electronic systems in the future. In digital systems, hardening techniques of their core components, such as latches, logic, and clock network, need to be addressed. Two single event tolerant latch designs taking advantage of feedback transistors are presented and evaluated in both single event resilience and overhead. These feedback transistors are turned OFF in the hold mode, thereby yielding a very large resistance. This, in turn, results in a larger feedback delay and higher single event tolerance. On the other hand, these extra transistors are turned ON when the cell is in the write mode. As a result, no significant write delay is introduced. Both designs demonstrate higher upset threshold and lower cross-section when compared to the reference cells. Dynamic logic circuits have intrinsic single event issues in each stage of the operations. The worst case occurs when the output is evaluated logic high, where the pull-up networks are turned OFF. In this case, the circuit fails to recover the output by pulling the output up to the supply rail. A capacitor added to the feedback path increases the node capacitance of the output and the feedback delay, thereby increasing the single event critical charge. Another differential structure that has two differential inputs and outputs eliminates single event upset issues at the expense of an increased number of transistors. Clock networks in advanced technology nodes may cause significant errors in an IC as the devices are more sensitive to single event strikes. Clock mesh is a widely used clocking scheme in a digital system. It was fabricated in a 28nm technology and evaluated through the use of heavy ions and laser irradiation experiments. Superior resistance to radiation strikes was demonstrated during these tests. In addition to mitigating single event issues by using hardened designs, built-in current sensors can be used to detect single event induced currents in the n-well and, if implemented, subsequently execute fault correction actions. These sensors were simulated and fabricated in a 28nm CMOS process. Simulation, as well as, experimental results, substantiates the validity of this sensor design. This manifests itself as an alternative to existing hardening techniques. In conclusion, this work investigates single event effects in digital systems, especially those in deep-submicron or advanced technology nodes. New hardened latch, dynamic logic, clock, and current sensor designs have been presented and evaluated. Through the use of these designs, the single event tolerance of a digital system can be achieved at the expense of varying overhead in terms of area, power, and delay

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects