Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip

Modal control in semiconductor optical waveguides with uniaxially patterned layers

Uniaxially patterned dielectric layers have an optical anisotropy that can be externally controlled. We study the effects of patterning the cladding or the core layer of a 3-layer optical waveguide on the polarization properties of propagating radiation. Particular attention is paid to the case when the core material is a semiconductor with optical gain. We discuss a number of devices based on incorporating an uniaxially patterned layer in the structure design, such as a polarization-insensitive amplifier, a polarizer, an optically-controlled polarization switch, and an optically controlled modal coupler.Comment: 9 pages 7 figure

Colloidal quantum dots enabling coherent light sources for integrated silicon-nitride photonics

Integrated photoniccircuits, increasingly based on silicon (-nitride), are at the core of the next generation of low-cost, energy efficient optical devices ranging from on-chip interconnects to biosensors. One of the main bottlenecks in developing such components is that of implementing sufficient functionalities on the often passive backbone, such as light emission and amplification. A possible route is that of hybridization where a new material is combined with the existing framework to provide a desired functionality. Here, we present a detailed design flow for the hybridization of silicon nitride-based integrated photonic circuits with so-called colloidal quantum dots (QDs). QDs are nanometer sized pieces of semiconductor crystals obtained in a colloidal dispersion which are able to absorb, emit, and amplify light in a wide spectral region. Moreover, theycombine cost-effective solution based deposition methods, ambient stability, and low fabrication cost. Starting from the linear and nonlinear material properties obtained on the starting colloidal dispersions, we can predict and evaluate thin film and device performance, which we demonstrate through characterization of the first on-chip QD-based laser

Reliable low-cost fabrication of low-loss Al2O3:Er3+Al_2O_3:Er^{3+} waveguides with 5.4-dB optical gain

A reliable and reproducible deposition process for the fabrication of $Al_2O_3$ waveguides with losses as low as 0.1 dB/cm has been developed. The thin films are grown at ~ 5 nm/min deposition rate and exhibit excellent thickness uniformity within 1% over 50times50 mm2 area and no detectable $OH^{-}$ incorporation. For applications of the $Al_2O_3$ films in compact, integrated optical devices, a high-quality channel waveguide fabrication process is utilized. Planar and channel propagation losses as low as 0.1 and 0.2 dB/cm, respectively, are demonstrated. For the development of active integrated optical functions, the implementation of rare-earth-ion doping is investigated by cosputtering of erbium during the $Al_2O_3$ layer growth. Dopant levels between 0.2-5times $1020 cm^{-3}$ are studied. At $Er^{3+}$ concentrations of interest for optical amplification, a lifetime of the 4I13/2 level as long as 7 ms is measured. Gain measurements over 6.4-cm propagation length in a 700-nm-thick $Al_2O_3:Er^{3+}$ channel waveguide result in net optical gain over a 41-nm-wide wavelength range between 1526-1567 nm with a maximum of 5.4 dB at 1533 n

Ion-Exchanged Glass Waveguide Technology: A Review

We review the history and current status of ion exchanged glass waveguide technology. The background of ion exchange in glass and key developments in the first years of research are briefly described. An overview of fabrication, characterization and modeling of waveguides is given and the most important waveguide devices and their applications are discussed. Ion exchanged waveguide technology has served as an available platform for studies of general waveguide properties, integrated optics structures and devices, as well as applications. It is also a commercial fabrication technology for both passive and active waveguide components

III-V-on-silicon photonic devices for optical communication and sensing

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm

Advances in small lasers

M.T.H was supported by an Australian Research council Future Fellowship research grant for this work. M.C.G. is grateful to the Scottish Funding Council (via SUPA) for financial support.Small lasers have dimensions or modes sizes close to or smaller than the wavelength of emitted light. In recent years there has been significant progress towards reducing the size and improving the characteristics of these devices. This work has been led primarily by the innovative use of new materials and cavity designs. This Review summarizes some of the latest developments, particularly in metallic and plasmonic lasers, improvements in small dielectric lasers, and the emerging area of small bio-compatible or bio-derived lasers. We examine the different approaches employed to reduce size and how they result in significant differences in the final device, particularly between metal- and dielectric-cavity lasers. We also present potential applications for the various forms of small lasers, and indicate where further developments are required.PostprintPeer reviewe