Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Design automation and analysis of three-dimensional integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.Includes bibliographical references (p. 165-176).This dissertation concerns the design of circuits and systems for an emerging technology known as three-dimensional integration. By stacking individual components, dice, or whole wafers using a high-density electromechanical interconnect, three-dimensional integration can achieve scalability and performance exceeding that of conventional fabrication technologies. There are two main contributions of this thesis. The first is a computer-aided design flow for the digital components of a three-dimensional integrated circuit (3-D IC). This flow primarily consists of two software tools: PR3D, a placement and routing tool for custom 3-D ICs based on standard cells, and 3-D Magic, a tool for designing, editing, and testing physical layout characteristics of 3-D ICs. The second contribution of this thesis is a performance analysis of the digital components of 3-D ICs. We use the above tools to determine the extent to which 3-D integration can improve timing, energy, and thermal performance. In doing so, we verify the estimates of stochastic computational models for 3-D IC interconnects and find that the models predict the optimal 3-D wire length to within 20% accuracy. We expand upon this analysis by examining how 3-D technology factors affect the optimal wire length that can be obtained. Our ultimate analysis extends this work by directly considering timing and energy in 3-D ICs. In all cases we find that significant performance improvements are possible. In contrast, thermal performance is expected to worsen with the use of 3-D integration. We examine precisely how thermal behavior scales in 3-D integration and determine quantitatively how the temperature may be controlled during the circuit placement process. We also show how advanced packaging(cont.) technologies may be leveraged to maintain acceptable die temperatures in 3-D ICs. Finally, we explore two issues for the future of 3-D integration. We determine how technology scaling impacts the effect of 3-D integration on circuit performance. We also consider how to improve the performance of digital components in a mixed-signal 3-D integrated circuit. We conclude with a look towards future 3-D IC design tools.by Shamik Das.Ph.D

Constraint-Aware, Scalable, and Efficient Algorithms for Multi-Chip Power Module Layout Optimization

Moving towards an electrified world requires ultra high-density power converters. Electric vehicles, electrified aerospace, data centers, etc. are just a few fields among wide application areas of power electronic systems, where high-density power converters are essential. As a critical part of these power converters, power semiconductor modules and their layout optimization has been identified as a crucial step in achieving the maximum performance and density for wide bandgap technologies (i.e., GaN and SiC). New packaging technologies are also introduced to produce reliable and efficient multichip power module (MCPM) designs to push the current limits. The complexity of the emerging MCPM layouts is surpassing the capability of a manual, iterative design process to produce an optimum design with agile development requirements. An electronic design automation tool called PowerSynth has been introduced with ongoing research toward enhanced capabilities to speed up the optimized MCPM layout design process. This dissertation presents the PowerSynth progression timeline with the methodology updates and corresponding critical results compared to v1.1. The first released version (v1.1) of PowerSynth demonstrated the benefits of layout abstraction, and reduced-order modeling techniques to perform rapid optimization of the MCPM module compared to the traditional, manual, and iterative design approach. However, that version is limited by several key factors: layout representation technique, layout generation algorithms, iterative design-rule-checking (DRC), optimization algorithm candidates, etc. To address these limitations, and enhance PowerSynth’s capabilities, constraint-aware, scalable, and efficient algorithms have been developed and implemented. PowerSynth layout engine has evolved from v1.3 to v2.0 throughout the last five years to incorporate the algorithm updates and generate all 2D/2.5D/3D Manhattan layout solutions. These fundamental changes in the layout generation methodology have also called for updates in the performance modeling techniques and enabled exploring different optimization algorithms. The latest PowerSynth 2 architecture has been implemented to enable electro-thermo-mechanical and reliability optimization on 2D/2.5D/3D MCPM layouts, and set up a path toward cabinet-level optimization. PowerSynth v2.0 computer-aided design (CAD) flow has been hardware-validated through manufacturing and testing of an optimized novel 3D MCPM layout. The flow has shown significant speedup compared to the manual design flow with a comparable optimization result

CAD methodologies for low power and reliable 3D ICs

The main objective of this dissertation is to explore and develop computer-aided-design (CAD) methodologies and optimization techniques for reliability, timing performance, and power consumption of through-silicon-via(TSV)-based and monolithic 3D IC designs. The 3D IC technology is a promising answer to the device scaling and interconnect problems that industry faces today. Yet, since multiple dies are stacked vertically in 3D ICs, new problems arise such as thermal, power delivery, and so on. New physical design methodologies and optimization techniques should be developed to address the problems and exploit the design freedom in 3D ICs. Towards the objective, this dissertation includes four research projects. The first project is on the co-optimization of traditional design metrics and reliability metrics for 3D ICs. It is well known that heat removal and power delivery are two major reliability concerns in 3D ICs. To alleviate thermal problem, two possible solutions have been proposed: thermal-through-silicon-vias (T-TSVs) and micro-fluidic-channel (MFC) based cooling. For power delivery, a complex power distribution network is required to deliver currents reliably to all parts of the 3D IC while suppressing the power supply noise to an acceptable level. However, these thermal and power networks pose major challenges in signal routability and congestion. In this project, a co-optimization methodology for signal, power, and thermal interconnects in 3D ICs is presented. The goal of the proposed approach is to improve signal, thermal, and power noise metrics and to provide fast and accurate design space explorations for early design stages. The second project is a study on 3D IC partition. For a 3D IC, the target circuit needs to be partitioned into multiple parts then mapped onto the dies. The partition style impacts design quality such as footprint, wirelength, timing, and so on. In this project, the design methodologies of 3D ICs with different partition styles are demonstrated. For the LEON3 multi-core microprocessor, three partitioning styles are compared: core-level, block-level, and gate-level. The design methodologies for such partitioning styles and their implications on the physical layout are discussed. Then, to perform timing optimizations for 3D ICs, two timing constraint generation methods are demonstrated that lead to different design quality. The third project is on the buffer insertion for timing optimization of 3D ICs. For high performance 3D ICs, it is crucial to perform thorough timing optimizations. Among timing optimization techniques, buffer insertion is known to be the most effective way. The TSVs have a large parasitic capacitance that increases the signal slew and the delay on the downstream. In this project, a slew-aware buffer insertion algorithm is developed that handles full 3D nets and considers TSV parasitics and slew effects on delay. Compared with the well-known van Ginneken algorithm and a commercial tool, the proposed algorithm finds buffering solutions with lower delay values and acceptable runtime overhead. The last project is on the ultra-high-density logic designs for monolithic 3D ICs. The nano-scale 3D interconnects available in monolithic 3D IC technology enable ultra-high-density device integration at the individual transistor-level. The benefits and challenges of monolithic 3D integration technology for logic designs are investigated. First, a 3D standard cell library for transistor-level monolithic 3D ICs is built and their timing and power behavior are characterized. Then, various interconnect options for monolithic 3D ICs that improve design quality are explored. Next, timing-closed, full-chip GDSII layouts are built and iso-performance power comparisons with 2D IC designs are performed. Important design metrics such as area, wirelength, timing, and power consumption are compared among transistor-level monolithic 3D, gate-level monolithic 3D, TSV-based 3D, and traditional 2D designs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin; Committee Member: Mukhopadhyay, Saiba

Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts

The 3D integration is the most promising technological solution to track the level of integration dictated by Moore's Law (see more than Moore, Moore versus more). It leads to important research for a dozen years. It can superimpose different circuits and components in one box. Its main advantage is to allow a combination of heterogeneous and highly specialized technologies for the establishment of a complete system, while maintaining a high level of performance with very short connections between the different circuits. The objective of this work is to provide consistent modeling via crossing, and / or contacts in the substrate, with various degrees of finesse / precision to allow the high-level designer to manage and especially to optimize the partitioning between the different strata. This modelization involves the development of multiple views at different levels of abstraction: the physical model to "high level" model. This would allow to address various issues faced in the design process: - The physical model using an electromagnetic simulation based on 2D or 3D ( finite element solver ) is used to optimize the via (materials, dimensions etc..) It determines the electrical performance of the via, including high frequency. Electromagnetic simulations also quantify the coupling between adjacent via. - The analytical compact of via their coupling model, based on a description of transmission line or Green cores is used for the simulations at the block level and Spice type simulations. Analytical models are often validated against measurements and / or physical models.L’intégration 3D est la solution technologique la plus prometteuse pour suivre le niveau d’intégration dictée par la loi de Moore (cf. more than Moore, versus more Moore). Elle entraine des travaux de recherche importants depuis une douzaine d’années. Elle permet de superposer différents circuits et composants dans un seul boitier. Son principal avantage est de permettre une association de technologies hétérogènes et très spécialisées pour la constitution d’un système complet, tout en préservant un très haut niveau de performance grâce à des connexions très courtes entre ces différents circuits. L’objectif de ce travail est de fournir des modélisations cohérentes de via traversant, ou/et de contacts dans le substrat, avec plusieurs degrés de finesse/précision, pour permettre au concepteur de haut niveau de gérer et surtout d’optimiser le partitionnement entre les différentes strates. Cette modélisation passe par le développement de plusieurs vues à différents niveaux d’abstraction: du modèle physique au modèle « haut niveau ». Elle devait permettre de répondre à différentes questions rencontrées dans le processus de conception :- le modèle physique de via basé sur une simulation électromagnétique 2D ou 3D (solveur « éléments finis ») est utilisé pour optimiser l’architecture du via (matériaux, dimensions etc.) Il permet de déterminer les performances électriques des via, notamment en haute fréquence. Les simulations électromagnétiques permettent également de quantifier le couplage entre via adjacents. - le modèle compact analytique de via et de leur couplage, basé sur une description de type ligne de transmission ou noyaux de Green, est utilisé pour les simulations au niveau bloc, ainsi que des simulations de type Spice. Les modèles analytiques sont souvent validés par rapport à des mesures et/ou des modèles physiques

MICROELECTRONICS PACKAGING TECHNOLOGY ROADMAPS, ASSEMBLY RELIABILITY, AND PROGNOSTICS

This paper reviews the industry roadmaps on commercial-off-the shelf (COTS) microelectronics packaging technologies covering the current trends toward further reducing size and increasing functionality. Due tothe breadth of work being performed in this field, this paper presents only a number of key packaging technologies. The topics for each category were down-selected by reviewing reports of industry roadmaps including the International Technology Roadmap for Semiconductor (ITRS) and by surveying publications of the International Electronics Manufacturing Initiative (iNEMI) and the roadmap of association connecting electronics industry (IPC). The paper also summarizes the findings of numerous articles and websites that allotted to the emerging and trends in microelectronics packaging technologies. A brief discussion was presented on packaging hierarchy from die to package and to system levels. Key elements of reliability for packaging assemblies were presented followed by reliabilty definition from a probablistic failure perspective. An example was present for showing conventional reliability approach using Monte Carlo simulation results for a number of plastic ball grid array (PBGA). The simulation results were compared to experimental thermal cycle test data. Prognostic health monitoring (PHM) methods, a growing field for microelectronics packaging technologies, were briefly discussed. The artificial neural network (ANN), a data-driven PHM, was discussed in details. Finally, it presented inter- and extra-polations using ANN simulation for thermal cycle test data of PBGA and ceramic BGA (CBGA) assemblies

InP microdisks for optical signal processing and data transmission

The performance increase in telecommunication and computing systems demands an ever increasing input-output (IO) bandwidth and IO density, which can be met by integrated photonics. Using photonic integration, much higher densities of optical components can be achieved allowing for short-range optical communication systems in, e.g., high performance computers. The key functionalities required for these optical communication systems are light generation, light modulation and light detection. In addition to this other functionalities are also desirable, such as wavelength conversion. This thesis highlights the design and fabrication of indium phosphide (InP) microdisks heterogeneously integrated on silicon-on-insulator substrates. The fabrication of the microdisks in a laboratory clean-room environment is described. These devices can fulfil the above-mentioned functions required in optical communication. Experiments are then performed on the fabricated devices dealing with these various functionalities that are required for optical communication. The lasing properties of the devices are shown and simulated with a spatiallydependent rate equation model accurately predicting the device behaviour. A detailed speed analysis is given, including a parameter extraction of the devices. The operation of the devices as detectors is highlighted. Furthermore the PhD thesis provides a deep analysis of the use of InP microdisks as modulators. Besides the forward-biased operation principle using the free-carrier plasma-dispersion effect, also a high-speed reversely biased operation mode is proposed and demonstrated experimentally. The thesis also describes various approaches on how to improve the performance of the devices, in particular when using them as lasers. Ways how to increase the output power and how to enhance the operation speed are discussed. Because the device is strongly dependent on the coupling between the resonant InP cavity and the silicon waveguide, an extensive analysis of the coupling and the influence of certain process steps on the device performance are given. The PhD thesis concludes the work carried out on InP microdisks and gives an outlook about improving the device performance with respect to specific applications and how to further improve the manufacturability of the devices. Finally, for the InP microdisk-based devices an outlook is given about suitable applications, such as on-chip optical links for instance