The Development and Packaging of a High-Density, Three-Phase, Silicon Carbide (SiC) Motor Drive

Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology. In this dissertation, the author discusses the design, development, packaging, and fabrication of the world\u27s first multichip power module (MCPM) that integrates SiC power transistors with silicon-on-insulator (SOI) integrated circuits. The fabricated MCPM prototype is a 4 kW, three-phase inverter that operates at temperatures in excess of 250 °C. The integration of high-temperature metal-oxide semiconductor (HTMOS) SOI bare die control components with SiC power JFET bare die into a single compact module are presented in this work. The high-temperature operation of SiC switches allows for increased power density over silicon electronics by an order of magnitude, leading to highly miniaturized power converters. This dissertation is organized into a compilation of publications written by the author over the course of his Ph.D. work. The work presented throughout these publications covers the challenges associated with power electronics miniaturization and packaging including high-power density, high-temperature, and high-efficiency operation of the power electronic system under study

Miniaturized Transistors, Volume II

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before

Driving and Protection of High Density High Temperature Power Module for Electric Vehicle Application

There has been an increasing trend for the commercialization of electric vehicles (EVs) to reduce greenhouse gas emissions and dependence on petroleum. However, a key technical barrier to their wide application is the development of high power density electric drive systems due to limited space within EVs. High temperature environment inherent in EVs further introduces a new level of complexity. Under high power density and high temperature operation, system reliability and safety also become important. This dissertation deals with the development of advanced driving and protection technologies for high temperature high density power module capable of operating under the harsh environment of electric vehicles, while ensuring system reliability and safety under short circuit conditions. Several related research topics will be discussed in this dissertation. First, an active gate driver (AGD) for IGBT modules is proposed to improve their overall switching performance. The proposed one has the capability of reducing the switching loss, delay time, and Miller plateau duration during turn-on and turn-off transient without sacrificing current and voltage stress. Second, a board-level integrated silicon carbide (SiC) MOSFET power module is developed for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI) based gate driver board is designed and fabricated through chip-on-board (COB) technique. Also, a 1200 V / 100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. Third, a comprehensive short circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs is presented. The short circuit capability of three types of commercial 1200 V SiC MOSFETs is tested under various conditions. The experimental short circuit behaviors are compared and analyzed through numerical thermal dynamic simulation. Finally, according to the short circuit ruggedness evaluation results, three short circuit protection methods are proposed to improve the reliability and overall cost of the SiC MOSFET based converter. A comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper protection method

Proceeding Of Mechanical Engineering Research Day 2016 (MERD’16)

This Open Access e-Proceeding contains a compilation of 105 selected papers from the Mechanical Engineering Research Day 2016 (MERD’16) event, which is held in Kampus Teknologi, Universiti Teknikal Malaysia Melaka (UTeM) - Melaka, Malaysia, on 31 March 2016. The theme chosen for this event is ‘IDEA. INSPIRE. INNOVATE’. It was gratifying to all of us when the response for MERD’16 is overwhelming as the technical committees received more than 200 submissions from various areas of mechanical engineering. After a peer-review process, the editors have accepted 105 papers for the e-proceeding that cover 7 main themes. This open access e-Proceeding can be viewed or downloaded at www3.utem.edu.my/care/proceedings. We hope that these proceeding will serve as a valuable reference for researchers. With the large number of submissions from the researchers in other faculties, the event has achieved its main objective which is to bring together educators, researchers and practitioners to share their findings and perhaps sustaining the research culture in the university. The topics of MERD’16 are based on a combination of fundamental researches, advanced research methodologies and application technologies. As the editor-in-chief, we would like to express our gratitude to the editorial board and fellow review members for their tireless effort in compiling and reviewing the selected papers for this proceeding. We would also like to extend our great appreciation to the members of the Publication Committee and Secretariat for their excellent cooperation in preparing the proceeding of MERD’16

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

By the continuing downscaling of sub-micron transistors in the range of few to one deca-nanometers, we focus on the increasing relative level of the low-frequency noise in these devices. Large amount of published data and models are reviewed and summarized, in order to capture the state-of-the-art, and to observe that the 1/area scaling of low-frequency noise holds even for carbon nanotube devices, but the noise becomes too large in order to have fully deterministic devices with area less than 10nm×10nm. The low-frequency noise models are discussed from the point of view that the noise can be both intrinsic and coupled to the charge transport in the devices, which provided a coherent picture, and more interestingly, showed that the models converge each to other, despite the many issues that one can find for the physical origin of each model. Several derivations are made to explain crossovers in noise spectra, variable random telegraph amplitudes, duality between energy and distance of charge traps, behaviors and trends for figures of merit by device downscaling, practical constraints for micropower amplifiers and dependence of phase noise on the harmonics in the oscillation signal, uncertainty and techniques of averaging by noise characterization. We have also shown how the unavoidable statistical variations by fabrication is embedded in the devices as a spatial “frozen noise”, which also follows 1/area scaling law and limits the production yield, from one side, and from other side, the “frozen noise” contributes generically to temporal 1/f noise by randomly probing the embedded variations during device operation, owing to the purely statistical accumulation of variance that follows from cause-consequence principle, and irrespectively of the actual physical process. The accumulation of variance is known as statistics of “innovation variance”, which explains the nearly log-normal distributions in the values for low-frequency noise parameters gathered from different devices, bias and other conditions, thus, the origin of geometric averaging in low-frequency noise characterizations. At present, the many models generally coincide each with other, and what makes the difference, are the values, which, however, scatter prominently in nanodevices. Perhaps, one should make some changes in the approach to the low-frequency noise in electronic devices, to emphasize the “statistics behind the numbers”, because the general physical assumptions in each model always fail at some point by the device downscaling, but irrespectively of that, the statistics works, since the low-frequency noise scales consistently with the 1/area law

DYNAMIC RANGE LIMITATIONS OF LOW-NOISE MICROWAVE TRANSISTORS AT CRYOGENIC TEMPERATURES

Dynamic range is an important metric that specifies the limits of input signal amplitude for the ideal operation of a given receiver. The low end of dynamic range is defined by the noise floor whereas the upper limit is determined by large-signal distortion. While dynamic range can be predicted in the temperature range where compact transistor models are valid, the lack of large-signal models at temperatures below -55 C prevents the prediction and optimization of dynamic range for applications that require cryogenic cooling. For decades, the main goal concerning the performance of these applications was lowering the noise floor of cryogenic receiver front-ends. For this, linear small-signal noise models have been extensively studied and used for designs of low-noise amplifiers. In this work, the existing small-signal noise modeling approach is extended to capture the weakly nonlinear properties of the transistors that are commonly used in cryogenic amplification. Indium phosphide high electron mobility transistors and silicon germanium heterojunction bipolar transistors are considered. The goal of this work is to identify the fundamental dynamic range limitations of these transistors such that the results are not device specific, but applicable to the corresponding device families. Identifying the fundamental limitations of dynamic range in a semiconductor device requires a broad understanding of physical properties of the transistors. For this, a theoretical analysis will be presented first as a function of temperature. The small-signal noise modeling will then be discussed using techniques that are well recognized in the literature. This will be followed by an explanation of the nonlinear modeling approach used in this work. This approach relies on the definition of Taylor series expansion coefficients of the dominant nonlinear mechanisms of the transistors. The modeling results will be interpreted with respect to the initially presented theoretical framework. Finally, the dynamic range performance will be studied as a function of source and load terminations. In addition to this systematic approach to understanding the physical limitations of dynamic range, model to measurement agreement of broadband cryogenic amplifiers will also be presented which will verify the accuracy of the modeling approach

Development of room temperature operating single electron transistor using FIB etching and deposition technology

The single-electron transistor (SET) is one of the best candidates for future nano electronic circuits because of its ultralow power consumption, small size and unique functionality. SET devices operate on the principle of Coulomb blockade, which is more prominent at dimensions of a few nano meters. Typically, the SET device consists of two capacitively coupled ultra-small tunnel junctions with a nano island between them. In order to observe the Coulomb blockade effects in a SET device the charging energy of the device has to be greater that the thermal energy. This condition limits the operation of most of the existing SET devices to cryogenic temperatures. Room temperature operation of SET devices requires sub-10nm nano-islands due to the inverse dependence of charging energy on the radius of the conducting nano-island. Fabrication of sub-10nm structures using lithography processes is still a technological challenge. In the present investigation, Focused Ion Beam based etch and deposition technology is used to fabricate single electron transistors devices operating at room temperature. The SET device incorporates an array of tungsten nano-islands with an average diameter of 8nm. The fabricated devices are characterized at room temperature and clear Coulomb blockade and Coulomb oscillations are observed. An improvement in the resolution limitation of the FIB etching process is demonstrated by optimizing the thickness of the active layer. SET devices with structural and topological variation are developed to explore their impact on the behavior of the device. The threshold voltage of the device was minimized to ~500mV by minimizing the source-drain gap of the device to 17nm. Vertical source and drain terminals are fabricated to realize single-dot based SET device. A unique process flow is developed to fabricate Si dot based SET devices for better gate controllability in the device characteristic. The device vi parameters of the fabricated devices are extracted by using a conductance model. Finally, characteristic of these devices are validated with the simulated data from theoretical modeling