Adaptive differential amplitude pulse-position modulation technique (DAPPM) using fuzzy logic for optical wireless communication channels

In the past few years, people have become increasingly demanding for high transmission rate, using high-speed data transfer rate, the number of user increased every year, therefore the high-speed optical wireless communication link have become more popular. Optical wireless communication has the potential for extremely high data rates of up to tens of Gigabits per second (Gb/s). An optical wireless channel is usually a non-directed link which can be categorized as either line-of-sight (LOS) or diffuses. Modulation techniques have attracted increasing attention in optical wireless communication, therefore in this project; a hybrid modulation technique named Differential Amplitude Pulse-Position Modulation (DAPPM) is proposed to improve the channel immunity by utilizing optimized modulation to channel. The average symbol length, unit transmission rate, channel capacity, peak-to-average power ratio (PAPR), transmission capacity, bandwidth requirement and power requirement of the DAPPM were determined and compared with other modulation schemes such as On-Off Key (OOK), Pulse-Amplitude Modulation (PAM), Pulse-Position Modulation (PPM), Differential Pulse-Position Modulation (DPPM), and Multilevel Digital Pulse Interval Modulation (MDPIM). Simulation result shows that DAPPM gives better bandwidth and power efficiency depending on the number of amplitude level (A) and the maximum length (L) of a symbol. In addition, the fuzzy logic module is developed to assist the adaptation process of differential amplitude pulse-position modulation. Mamdani fuzzy logic method is used in which the decisions made by the system will be approaching to what would be decided by the user in the real world

Nanowire Volatile RAM as an Alternative to SRAM

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage power control are critical issues. To alleviate some of these challenges a novel non-volatile memory alternative to SRAM was proposed called nanowire volatile RAM (NWRAM). Due to NWRAMs regular grid based layout and innovative circuit style, manufacturing complexity is reduced and at the same time considerable benefits are attained in terms of performance and leakage power reduction. In this paper, we elaborate more on NWRAM circuit aspects and manufacturability, and quantify benefits at 16nm technology node through simulation against state-of-the-art 6T-SRAM and gridded 8T-SRAM designs. Our results show the 10T-NWRAM to be 2x faster and 35x better in terms of leakage when compared to high performance gridded 8T-SRAM design

A Compact CMOS Memristor Emulator Circuit and its Applications

Conceptual memristors have recently gathered wider interest due to their diverse application in non-von Neumann computing, machine learning, neuromorphic computing, and chaotic circuits. We introduce a compact CMOS circuit that emulates idealized memristor characteristics and can bridge the gap between concepts to chip-scale realization by transcending device challenges. The CMOS memristor circuit embodies a two-terminal variable resistor whose resistance is controlled by the voltage applied across its terminals. The memristor 'state' is held in a capacitor that controls the resistor value. This work presents the design and simulation of the memristor emulation circuit, and applies it to a memcomputing application of maze solving using analog parallelism. Furthermore, the memristor emulator circuit can be designed and fabricated using standard commercial CMOS technologies and opens doors to interesting applications in neuromorphic and machine learning circuits.Comment: Submitted to International Symposium of Circuits and Systems (ISCAS) 201