454 research outputs found
Modelling of field-effect transistors based on 2D materials targeting high-frequency applications
New technologies are necessary for the unprecedented expansion of
connectivity and communications in the modern technological society. The
specific needs of wireless communication systems in 5G and beyond, as well as
devices for the future deployment of Internet of Things has caused that the
International Technology Roadmap for Semiconductors, which is the strategic
planning document of the semiconductor industry, considered since 2011,
graphene and related materials (GRMs) as promising candidates for the future of
electronics. Graphene, a one-atom-thick of carbon, is a promising material for
high-frequency applications due to its intrinsic superior carrier mobility and
very high saturation velocity. These exceptional carrier transport properties
suggest that GRM-based field-effect transistors could potentially outperform
other technologies.
This thesis presents a body of work on the modelling, performance prediction
and simulation of GRM-based field-effect transistors and circuits. The main
goal of this work is to provide models and tools to ease the following issues:
(i) gaining technological control of single layer and bilayer graphene devices
and, more generally, devices based on 2D materials, (ii) assessment of
radio-frequency (RF) performance and microwave stability, (iii) benchmarking
against other existing technologies, (iv) providing guidance for device and
circuit design, (v) simulation of circuits formed by GRM-based transistors.Comment: Thesis, 164 pages, http://hdl.handle.net/10803/40531
DESIGN, COMPACT MODELING AND CHARACTERIZATION OF NANOSCALE DEVICES
Electronic device modeling is a crucial step in the advancement of modern nanotechnology and is gaining more and more interest. Nanoscale complementary metal oxide semiconductor (CMOS) transistors, being the backbone of the electronic industry, are pushed to below 10 nm dimensions using novel manufacturing techniques including extreme lithography. As their dimensions are pushed into such unprecedented limits, their behavior is still captured using models that are decades old. Among many other proposed nanoscale devices, silicon vacuum electron devices are regaining attention due to their presumed advantages in operating at very high power, high speed and under harsh environment, where CMOS cannot compete. Another type of devices that have the potential to complement CMOS transistors are nano-electromechanical systems (NEMS), with potential applications in filters, stable frequency sources, non-volatile memories and reconfigurable and neuromorphic electronics
Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors
The progress made toward the definition of a modular compact modeling
technology for graphene field-effect transistors (GFETs) that enables the electrical
analysis of arbitrary GFET-based integrated circuits is reported. A set of
primary models embracing the main physical principles defines the ideal GFET
response under DC, transient (time domain), AC (frequency domain), and noise
(frequency domain) analysis. Another set of secondary models accounts for the
GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-,
self-heating-, and non-quasi static-effects, which can have a significant impact
under static and/or dynamic operation. At both device and circuit levels, significant
consistency is demonstrated between the simulation output and experimental
data for relevant operating conditions. Additionally, a perspective of the
challenges during the scale up of the GFET modeling technology toward higher
technology readiness levels while drawing a collaborative scenario among fabrication
technology groups, modeling groups, and circuit designers, is provided.European Commission 881603Spanish Government
European Commission RTI2018-097876-B-C21
European CommissionDepartament de Recerca i Universitat 001-P-00170
Design methodology for graphene tunable filters at the sub–millimeter–wave frequencies
Tunable components and circuits, allowing for the fast switching between the states of operation, are among the basic building blocks for future communications and other emerging applications. Based on the previous thorough study of graphene based resonators, the design methodology for graphene tunable filters has been devised, outlined, as well as explained through an example of the fifth order filter. The desired filtering responses can be achieved with the material loss not higher than the loss corresponding to the previously studied single resonators, depending mostly on the quantity of graphene per resonator. The proposed design method relies on the detailed design space mapping; obtained data gives an immediate assessment of the feasibility of specifications with a particular filter order, maximal passband ripple level, desired bandwidth, and acceptable losses. The design process could be further automated by the knowledge based approach using the collected design space data
Agenda: Second International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors (TFE3S)
University of Dayton’s Center of Excellence for Thin Film Research and Surface Engineering (CETRASE) is delighted to organize its second international workshop at the University of Dayton’s Research Institute (UDRI) campus in Dayton, Ohio, USA. The purpose of the new workshop is to exchange technical knowledge and boost technical and educational collaboration activities within the thin film research community through our CETRASE and the UDRI
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