Flexible Ultralow-Power Sensor Interfaces for E-Skin

Thin-film electronics has hugely benefitted from low-cost processes, large-area processability, and multi-functionality. This has not only stimulated innovation in display and sensor technology, but has also demonstrated great potential for integration of components for human-machine interfaces. For electronics to be deployed as sensor interfaces and signal processing, the quest for low power is compelling due to the inherently limited battery lifetime. This review will present the state-of-the-art in thin film electronics and demonstrate examples of low-cost printable transistors and biosensors that are flexible/stretchable for wearable and other applications. Ultralow power design for thin-film transistors will be discussed from the standpoint of reducing both operating voltage and operating current, taking into account the challenges in meeting frequency requirements. Compact models for circuit design will be reviewed along with new insights into ultralow power transistors and high gain amplifier circuits. Finally, a concept for an integrated system comprising sensors and interfacing circuits will be demonstrated, which has the potential to enable battery-less operation.EPSRC under Project EP/M013650/1 EU under Projects DOMINO 645760, 1D-NEON 685758 and BET-EU 692373 IEEE Electron Devices Society PhD Student Fellowship China Scholarship Counci

Robustness Comparison of Emerging Devices for Portable Applications

Extensive development in portable devices imposes pressing need for designing VLSI circuits with ultralow power (ULP) consumption. Subthreshold operating region is found to be an attractive solution for achieving ultralow power. However, it limits the circuit speed due to use of parasitic leakage current as drive current. Maintaining power dissipation at ultralow level with enhanced speed will further broaden the application area of subthreshold circuits even towards the field programmable gate arrays and real-time portable domain. Operating the Si-MOSFET in subthreshold regions degrades the circuit performance in terms of speed and also increases the well-designed circuit parameter spreading due to process, voltage, and temperature variations. This may cause the subthreshold circuit failure at very low supply voltage. It is essential to examine the robustness of most emerging devices against PVT variations. Therefore, this paper investigates and compares the performance of most promising upcoming devices like CNFET and DG FinFET in subthreshold regions. Effect of PVT variation on performance of CNFET and DG FinFET has been explored and it is found that CNFET is more robust than DG-FinFET under subthreshold conditions against PVT variations

Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain

In this paper, we identify the level shifter (LS) for voltage up-conversion from the ultralow-voltage regime as a key application domain of tunnel FETs (TFETs).We propose a mixed TFET\u2013MOSFET LS design methodology, which exploits the complementary characteristics of TFET and MOSFET devices. Simulation results show that the hybrid LS exhibits superior dynamic performance at the same static power consumption compared with the conventional MOSFET and pure TFET solutions. The advantage of the mixed design with respect to the conventional MOSFET approach is emphasized when lower voltage signals have to be up-converted, reaching an improvement of the energy-delay product up to three decades. When compared with the full MOSFET design, the mixed TFET\u2013MOSFET solution appears to be less sensitive toward threshold voltage variations in terms of dynamic figures of merit, at the expense of higher leakage variability. Similar results are obtained for four different LS topologies, thus indicating that the hybrid TFET\u2013MOSFET approach offers intrinsic advantages in the design of LS for voltage up-conversion from the ultralow-voltage regime compared with the conventional MOSFET and pure TFET solutions

The Integration of nearthreshold and subthreshold CMOS logic for energy minimization

With the rapid growth in the use of portable electronic devices, more emphasis has recently been placed on low-energy circuit design. Digital subthreshold complementary metal-oxide-semiconductor (CMOS) circuit design is one area of study that offers significant energy reduction by operating at a supply voltage substantially lower than the threshold voltage of the transistor. However, these energy savings come at a critical cost to performance, restricting its use to severely energy-constrained applications such as microsensor nodes. In an effort to mitigate this performance degradation in low-energy designs, nearthreshold circuit design has been proposed and implemented in digital circuits such as Intel\u27s energy-efficient hardware accelerator. The application spectrum of nearthreshold and subthreshold design could be broadened by integrating these cells into high-performance designs. This research focuses on the integration of characterized nearthreshold and subthreshold standard cells into high-performance functional modules. Within these functional modules, energy minimization is achieved while satisfying performance constraints by replacing non-critical path logic with nearthreshold and subthreshold logic cells. Specifically, the critical path method is used to bind the timing and energy constraints of the design. The design methodology was verified and tested with several benchmark circuits, including a cryptographic hash function, Skein. An average energy savings of 41.15% was observed at a circuit performance degradation factor of 10. The energy overhead of the level shifters accounted for at least 8.5% of the energy consumption of the optimized circuit, with an average energy overhead of 26.76%. A heuristic approach is developed for estimating the energy savings of the optimized design

Ultra Low Power Design for Digital CMOS Circuits Operating Near Threshold

Circuits operating in the subthreshold region are synonymous to low energy operation. However, the penalty in performance is colossal. In this paper, we investigate how designing in moderate inversion region recuperates some of that lost performance, while remaining very near to the minimum energy point. An power based minimum energy delay modeling that is continuous over the weak, moderate, and strong inversion regions is presented. The effect of supply voltage and device sizing on the minimum energy and performance is determined. The proposed model is utilized to design a temperature to time generator at 32nm technology node asthe application of the proposed model

Digital and analog TFET circuits: Design and benchmark

In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions

Digital and analog TFET circuits: Design and benchmark

In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions

Low Power CMOS Electrocardiogram Amplifier Design for Wearable Cardiac Screening

The trend of health care screening devices in the world is increasingly towards the favor of portability and wearability. This is because these wearable screening devices are not restricting the patient’s freedom and daily activities. While the demand of low power and low cost biomedical system on chip is increasing in exponential way, the front-end electrocardiogram (ECG) amplifiers are still suffering from flicker noise for low frequency cardiac signal acquisition, 50Hz power line electromagnetic interference, and the large unstable input offsets due to the electrode-skin interface is not attached properly. In this paper, a CMOS based ECG amplifier that suitable for low power wearable cardiac screening is proposed. The amplifier adopts the highly stable folded cascode topology and later being implemented into RC feedback circuit for low frequency DC offset cancellation. By using  0.13µm CMOS technology from Silterra, the simulation results show that this front-end circuit can achieve a very low input referred noise of  1pV/Hz1/2 and high common mode rejection ratio of 174.05dB. It also gives voltage gain of 75.45dB with good power supply rejection ratio of 92.12dB. The total power consumption is only 3µW and thus suitable to be implemented with further signal processing and classification back end for low power wearable biomedical device

Steep-slope Devices for Power Efficient Adiabatic Logic Circuits

Reducing supply voltage is an effective way to reduce power consumption, however, it greatly reduces CMOS circuits speed. This translates in limitations on how low the supply voltage can be reduced in many applications due to frequency constraints. In particular, in the context of low voltage adiabatic circuits, another well-known technique to save power, it is not possible to obtain satisfactory power-speed trade-offs. Tunnel field-effect transistors (TFETs) have been shown to outperforms CMOS at low supply voltage in static logic implementations, operation due to their steep subthreshold slope (SS), and have potential for combining low voltage and adiabatic. To the best of our knowledge, the adiabatic circuit topologies reported with TFETs do not take into account the problems associated with their inverse current due to their intrinsic p-i-n diode. In this paper, we propose a solution to this problem, demonstrating that the proposed modification allows to significantly improving the performance in terms of power/energy savings compared to the original ones, especially at medium and low frequencies. In addition, we have evaluated the relative advantages of the proposed TFET adiabatic circuits, both at gate and architecture levels, with respect to their static implementations, demonstrating that these are greater than for FinFET transistor designs. Index Terms—Adiabatic logic, TunnelPeer reviewe