410 research outputs found
2D Detectors for Particle Physics and for Imaging Applications
The demands on detectors for particle detection as well as for medical and
astronomical X-ray imaging are continuously pushing the development of novel
pixel detectors. The state of the art in pixel detector technology to date are
hybrid pixel detectors in which sensor and read-out integrated circuits are
processed on different substrates and connected via high density interconnect
structures. While these detectors are technologically mastered such that large
scale particle detectors can be and are being built, the demands for improved
performance for the next generation particle detectors ask for the development
of monolithic or semi-monolithic approaches. Given the fact that the demands
for medical imaging are different in some key aspects, developments for these
applications, which started as particle physics spin-off, are becomming rather
independent. New approaches are leading to novel signal processing concepts and
interconnect technologies to satisfy the need for very high dynamic range and
large area detectors. The present state in hybrid and (semi-)monolithic pixel
detector development and their different approaches for particle physics and
imaging application is reviewed
R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
This report reviews current trends in the R&D of semiconductor pixellated
sensors for vertex tracking and radiation imaging. It identifies requirements
of future HEP experiments at colliders, needed technological breakthroughs and
highlights the relation to radiation detection and imaging applications in
other fields of science.Comment: 17 pages, 2 figures, submitted to the European Strategy Preparatory
Grou
Detector Technologies for CLIC
The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear
electron-positron collider under development. It is foreseen to be built and
operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3
TeV, respectively. It offers a rich physics program including direct searches
as well as the probing of new physics through a broad set of precision
measurements of Standard Model processes, particularly in the Higgs-boson and
top-quark sectors. The precision required for such measurements and the
specific conditions imposed by the beam dimensions and time structure put
strict requirements on the detector design and technology. This includes
low-mass vertexing and tracking systems with small cells, highly granular
imaging calorimeters, as well as a precise hit-time resolution and power-pulsed
operation for all subsystems. A conceptual design for the CLIC detector system
was published in 2012. Since then, ambitious R&D programmes for silicon vertex
and tracking detectors, as well as for calorimeters have been pursued within
the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector
requirements with innovative technologies. This report introduces the
experimental environment and detector requirements at CLIC and reviews the
current status and future plans for detector technology R&D.Comment: 152 pages, 116 figures; published as CERN Yellow Report Monograph
Vol. 1/2019; corresponding editors: Dominik Dannheim, Katja Kr\"uger, Aharon
Levy, Andreas N\"urnberg, Eva Sickin
A review of advances in pixel detectors for experiments with high rate and radiation
The Large Hadron Collider (LHC) experiments ATLAS and CMS have established
hybrid pixel detectors as the instrument of choice for particle tracking and
vertexing in high rate and radiation environments, as they operate close to the
LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for
which the tracking detectors will be completely replaced, new generations of
pixel detectors are being devised. They have to address enormous challenges in
terms of data throughput and radiation levels, ionizing and non-ionizing, that
harm the sensing and readout parts of pixel detectors alike. Advances in
microelectronics and microprocessing technologies now enable large scale
detector designs with unprecedented performance in measurement precision (space
and time), radiation hard sensors and readout chips, hybridization techniques,
lightweight supports, and fully monolithic approaches to meet these challenges.
This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog.
Phy
Neutron irradiation test of depleted CMOS pixel detector prototypes
Charge collection properties of depleted CMOS pixel detector prototypes
produced on p-type substrate of 2 kcm initial resistivity (by LFoundry
150 nm process) were studied using Edge-TCT method before and after neutron
irradiation. The test structures were produced for investigation of CMOS
technology in tracking detectors for experiments at HL-LHC upgrade.
Measurements were made with passive detector structures in which current pulses
induced on charge collecting electrodes could be directly observed. Thickness
of depleted layer was estimated and studied as function of neutron irradiation
fluence. An increase of depletion thickness was observed after first two
irradiation steps to 110 n/cm and 510
n/cm and attributed to initial acceptor removal. At higher fluences the
depletion thickness at given voltage decreases with increasing fluence because
of radiation induced defects contributing to the effective space charge
concentration. The behaviour is consistent with that of high resistivity
silicon used for standard particle detectors. The measured thickness of the
depleted layer after irradiation with 110 n/cm is more than
50 m at 100 V bias. This is sufficient to guarantee satisfactory
signal/noise performance on outer layers of pixel trackers in HL-LHC
experiments
Implementation and Characterisation of Monolithic CMOS Pixel Sensors for the CLIC Vertex and Tracking Detectors
Different CMOS technologies are being considered for the vertex and tracking layers of the detector at the proposed high-energy ee Compact Linear Collider (CLIC). CMOS processes have been proven to be suitable for building high granularity, large area detector systems with low material budget and low power consumption. An effort is put on implementing detectors capable of performing precise timing measurements. Two Application-Specific Integrated Circuits (ASICs) for particle detection have been developed in the framework of this thesis, following the specifications of the CLIC vertex and tracking detectors. The process choice was based on a study of the features of each of the different available technologies and an evaluation of their suitability for each application. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a pixelated detector chip designed to be used in capacitively coupled assemblies with the CLICpix2 readout chip, in the framework of the vertex detector at CLIC. The chip comprises a matrix of 128×128 square pixels with 25 µm pitch. A commercial 180 nm High-Voltage (HV) CMOS process was used for the C3PD design. The charge is collected with a large deep N-well, while each pixel includes a preamplifier placed on top of the collecting electrode. The C3PD chip was produced on wafers with different values for the substrate resistivity (∼ 20, 80, 200 and 1000 Ωcm) and has been extensively tested through laboratory measurements and beam tests. The design details and characterisation results of the C3PD chip will be presented. The CLIC Tracker Detector (CLICTD) is a novel monolithic detector chip developed in the context of the silicon tracker at CLIC. The CLICTD chip combines high density, mixed mode circuits on the same substrate, while it performs a fast time-tagging measurement with 10 ns time bins. The chip is produced in a 180 nm CMOS imaging process with a High-Resistivity (HR) epitaxial layer. A matrix of 16×128 detecting cells, each measuring 300 × 30 µm , is included. A small N-well is used to collect the charge generated in the sensor volume, while an additional deep N-type implant is used to fully deplete the epitaxial layer. Using a process split, additional wafers are produced with a segmented deep N-type implant, a modification that has been simulated to result in a faster charge collection time. Each detecting cell is segmented into eight front-ends to ensure prompt charge collection in the sensor diodes. A simultaneous 8-bit timing and 5-bit energy measurement is performed in each detecting cell. A detailed description of the CLICTD design will be given, followed by the first measurement results
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