Technology-Circuit-Algorithm Tri-Design for Processing-in-Pixel-in-Memory (P2M)

The massive amounts of data generated by camera sensors motivate data processing inside pixel arrays, i.e., at the extreme-edge. Several critical developments have fueled recent interest in the processing-in-pixel-in-memory paradigm for a wide range of visual machine intelligence tasks, including (1) advances in 3D integration technology to enable complex processing inside each pixel in a 3D integrated manner while maintaining pixel density, (2) analog processing circuit techniques for massively parallel low-energy in-pixel computations, and (3) algorithmic techniques to mitigate non-idealities associated with analog processing through hardware-aware training schemes. This article presents a comprehensive technology-circuit-algorithm landscape that connects technology capabilities, circuit design strategies, and algorithmic optimizations to power, performance, area, bandwidth reduction, and application-level accuracy metrics. We present our results using a comprehensive co-design framework incorporating hardware and algorithmic optimizations for various complex real-life visual intelligence tasks mapped onto our P2M paradigm

Low-Power CMOS Vision Sensor for Gaussian Pyramid Extraction

This paper introduces a CMOS vision sensor chip in a standard 0.18 μm CMOS technology for Gaussian pyramid extraction. The Gaussian pyramid provides computer vision algorithms with scale invariance, which permits having the same response regardless of the distance of the scene to the camera. The chip comprises 176×120 photosensors arranged into 88×60 processing elements (PEs). The Gaussian pyramid is generated with a double-Euler switched capacitor (SC) network. Every PE comprises four photodiodes, one 8 b single-slope analog-to-digital converter, one correlated double sampling circuit, and four state capacitors with their corresponding switches to implement the double-Euler SC network. Every PE occupies 44×44 μm2 . Measurements from the chip are presented to assess the accuracy of the generated Gaussian pyramid for visual tracking applications. Error levels are below 2% full-scale output, thus making the chip feasible for these applications. Also, energy cost is 26.5 nJ/px at 2.64 Mpx/s, thus outperforming conventional solutions of imager plus microprocessor unit.Office of Naval Research, USA N00014-14-1-0355Ministerio de Economía y Competitividad TEC2015-66878- C3-1-R, TEC2015-66878-C3-3-RJunta de Andalucía TIC 2338, EM2013/038, EM2014/01

A 1000 FPS at 128×128 vision processor with 8-bit digitized I/O

This paper presents a mixed-signal programmable chip for high-speed vision applications. It consists of an array of processing elements, arranged to operate in accordance with the principles of single instruction multiple data (SIMD) computing architectures. This chip, implemented in a 0.35-μm fully digital CMOS technology, contains ∼ 3.75 M transistors and exhibits peak performance figures of 330 GOPS (8-bit equivalent giga-operations per second), 3.6 GOPS/mm2 and 82.5 GOPS/W. It includes structures for image acquisition and for image processing, meaning that it does not require a separate imager for operation. At the sensory side, integration and log-compression sensing circuits are embedded, thus allowing the chip to handle a large variety of illumination conditions. At the processing plane, analog and digital circuits are employed whose parameters can be programmed and their architecture reconfigured for the realization of software-coded processing algorithms. The chip provides, and accepts, 8-bit digitized data through a 32-bit bidirectional data bus which operates at 120 MB/s. Experimental results show that frame rates of 1000 frames per second (FPS) can be achieved under room illumination conditions; applications using exposures of about 50 μs have been recently reached by using special illumination setups. The chip can capture an image, run approximately 150 two-dimensional linear convolutions, and download the result in 8-bit digital format, in less than 1 ms. This feature, together with the possibility of executing sequences of user-definable instructions (stored on a full-custom 32-kb on-chip memory), and storing intermediate results (up to 8 grayscale images) makes the chip a true general-purpose sensory/processing device.European Commission IST-2001-38097Office of Naval Research (USA) N00014021088

Improved Contrast Sensitivity DVS and its Application to Event-Driven Stereo Vision

This paper presents a new DVS sensor with one order of magnitude improved contrast sensitivity over previous reported DVSs. This sensor has been applied to a bio-inspired event-based binocular system that performs 3D event-driven reconstruction of a scene. Events from two DVS sensors are matched by using precise timing information of their ocurrence. To improve matching reliability, satisfaction of epipolar geometry constraint is required, and simultaneously available information on the orientation is used as an additional matching constraint.Ministerio de Economía y Competitividad PRI-PIMCHI-2011-0768Ministerio de Economía y Competitividad TEC2009-10639-C04-01Junta de Andalucía TIC-609

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Smart Sensor Networks For Sensor-Neural Interface

One in every fifty Americans suffers from paralysis, and approximately 23% of paralysis cases are caused by spinal cord injury. To help the spinal cord injured gain functionality of their paralyzed or lost body parts, a sensor-neural-actuator system is commonly used. The system includes: 1) sensor nodes, 2) a central control unit, 3) the neural-computer interface and 4) actuators. This thesis focuses on a sensor-neural interface and presents the research related to circuits for the sensor-neural interface. In Chapter 2, three sensor designs are discussed, including a compressive sampling image sensor, an optical force sensor and a passive scattering force sensor. Chapter 3 discusses the design of the analog front-end circuit for the wireless sensor network system. A low-noise low-power analog front-end circuit in 0.5μm CMOS technology, a 12-bit 1MS/s successive approximation register (SAR) analog-to-digital converter (ADC) in 0.18μm CMOS process and a 6-bit asynchronous level-crossing ADC realized in 0.18μm CMOS process are presented. Chapter 4 shows the design of a low-power impulse-radio ultra-wide-band (IR-UWB) transceiver (TRx) that operates at a data rate of up to 10Mbps, with a power consumption of 4.9pJ/bit transmitted for the transmitter and 1.12nJ/bit received for the receiver. In Chapter 5, a wireless fully event-driven electrogoniometer is presented. The electrogoniometer is implemented using a pair of ultra-wide band (UWB) wireless smart sensor nodes interfacing with low power 3-axis accelerometers. The two smart sensor nodes are configured into a master node and a slave node, respectively. An experimental scenario data analysis shows higher than 90% reduction of the total data throughput using the proposed fully event-driven electrogoniometer to measure joint angle movements when compared with a synchronous Nyquist-rate sampling system. The main contribution of this thesis includes: 1) the sensor designs that emphasize power efficiency and data throughput efficiency; 2) the fully event-driven wireless sensor network system design that minimizes data throughput and optimizes power consumption

A Low-Power Wireless Multichannel Microsystem for Reliable Neural Recording.

This thesis reports on the development of a reliable, single-chip, multichannel wireless biotelemetry microsystem intended for extracellular neural recording from awake, mobile, and small animal models. The inherently conflicting requirements of low power and reliability are addressed in the proposed microsystem at architectural and circuit levels. Through employing the preliminary microsystems in various in-vivo experiments, the system requirements for reliable neural recording are identified and addressed at architectural level through the analytical tool: signal path co-optimization. The 2.85mm×3.84mm, mixed-signal ASIC integrates a low-noise front-end, programmable digital controller, an RF modulator, and an RF power amplifier (PA) at the ISM band of 433MHz on a single-chip; and is fabricated using a 0.5µm double-poly triple-metal n-well standard CMOS process. The proposed microsystem, incorporating the ASIC, is a 9-channel (8-neural, 1-audio) user programmable reliable wireless neural telemetry microsystem with a weight of 2.2g (including two 1.5V batteries) and size of 2.2×1.1×0.5cm3. The electrical characteristics of this microsystem are extensively characterized via benchtop tests. The transmitter consumes 5mW and has a measured total input referred voltage noise of 4.74µVrms, 6.47µVrms, and 8.27µVrms at transmission distances of 3m, 10m, and 20m, respectively. The measured inter-channel crosstalk is less than 3.5% and battery life is about an hour. To compare the wireless neural telemetry systems, a figure of merit (FoM) is defined as the reciprocal of the power spent on broadcasting one channel over one meter distance. The proposed microsystem’s FoM is an order of magnitude larger compared to all other research and commercial systems. The proposed biotelemetry system has been successfully used in two in-vivo neural recording experiments: i) from a freely roaming South-American cockroach, and ii) from an awake and mobile rat.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91542/1/aborna_1.pd