An orbitally derived single-atom magnetic memory

A single magnetic atom on a surface epitomizes the scaling limit for magnetic information storage. Indeed, recent work has shown that individual atomic spins can exhibit magnetic remanence and be read out with spin-based methods, demonstrating the fundamental requirements for magnetic memory. However, atomic spin memory has been only realized on thin insulating surfaces to date, removing potential tunability via electronic gating or distance-dependent exchange-driven magnetic coupling. Here, we show a novel mechanism for single-atom magnetic information storage based on bistability in the orbital population, or so-called valency, of an individual Co atom on semiconducting black phosphorus (BP). Distance-dependent screening from the BP surface stabilizes the two distinct valencies and enables us to electronically manipulate the relative orbital population, total magnetic moment and spatial charge density of an individual magnetic atom without a spin-dependent readout mechanism. Furthermore, we show that the strongly anisotropic wavefunction can be used to locally tailor the switching dynamics between the two valencies. This orbital memory derives stability from the energetic barrier to atomic relaxation and demonstrates the potential for high-temperature single-atom information storage

Charge state of vacancy defects in Eu-doped GaN

Eu ions have been doped into GaN in order to achieve red luminescence under current injection, where coupling between the Eu ions and intrinsic defects such as vacancies are known to play an important role. However, the charge state of the vacancies and the impact it would have on the optical and magnetic properties of the Eu ions have not been explored. Through a combination of first-principle calculations and experimental results, the influence of the charge state of the defect environment surrounding the Eu ions has been investigated. We have identified two Eu centers that are related through the charge state of a local vacancy defect. These two centers were found to exhibit a mutual metastability, such that each center can be excited in one configuration and emit as the other. This metastability was found to be dependent on temperature and the wavelength of the excitation laser. Furthermore, one of these centers was found to have an effective magnetic g factor that is substantially larger than what is expected for an isolated Eu3+ ion and is explained by a change in the charge state of the defect environment around the Eu. This prediction could also offer a new explanation for the saturation magnetization previously observed in GaN : Eu and other GaN: RE systems.112Ysciescopu

Designer quantum states of matter created atom-by-atom

With the advances in high resolution and spin-resolved scanning tunneling microscopy as well as atomic-scale manipulation, it has become possible to create and characterize quantum states of matter bottom-up, atom-by-atom. This is largely based on controlling the particle- or wave-like nature of electrons, as well as the interactions between spins, electrons, and orbitals and their interplay with structure and dimensionality. We review the recent advances in creating artificial electronic and spin lattices that lead to various exotic quantum phases of matter, ranging from topological Dirac dispersion to complex magnetic order. We also project future perspectives in non-equilibrium dynamics, prototype technologies, engineered quantum phase transitions and topology, as well as the evolution of complexity from simplicity in this newly developing field

Nuclear Spin Alignment in Optically Pumped Semiconductors

Nuclear magnetic resonance (NMR) has shown its ability to be a very informative analytical technique due to the ability to measure very small changes in the energy splittings due to the nuclei’s local environment. However, this ability is hindered by the low sensitivity of the experiment. Many methods have been postulated and implemented to enhance the sensitivity of NMR experiments; one of which is optically pumped NMR (OPNMR). In this dissertation, the usefulness and potential applications of OPNMR are presented. First, a doubly resonant OPNMR probe was fabricated in order to complete more advanced NMR techniques while optically pumping the semiconductor sample. OPNMR was then shown to be very beneficial and accurate for measuring light hole transitions in semiconductors, which are typically difficult to observe using traditional techniques. The optical pumping behavior of a sample (CdTe) has been debated, but was measured here in order to obtain the expected trends and behavior. Discussion of the potential uses of optically oriented isolated spins pairs is presented and the characterization of such spin pairs is implemented, which included the first experimental report of a postulated NMR sequence (a version of spin echo double resonance). An Al2O3/GaAs interface was studied by OPNMR in order to observe the properties for the first time and the measured polarization was much higher than previously reported. Lastly, molecular dynamic and density functional theory calculations were used collaboratively to provide an accurate model for amorphous alumina

Charge state of vacancy defects in Eu-doped GaN

Eu ions have been doped into GaN in order to achieve red luminescence under current injection, where coupling between the Eu ions and intrinsic defects such as vacancies are known to play an important role. However, the charge state of the vacancies and the impact it would have on the optical and magnetic properties of the Eu ions have not been explored. Through a combination of first-principle calculations and experimental results, the influence of the charge state of the defect environment surrounding the Eu ions has been investigated. We have identified two Eu centers that are related through the charge state of a local vacancy defect. These two centers were found to exhibit a mutual metastability, such that each center can be excited in one configuration and emit as the other. This metastability was found to be dependent on temperature and the wavelength of the excitation laser. Furthermore, one of these centers was found to have an effective magnetic g factor that is substantially larger than what is expected for an isolated Eu3+ ion and is explained by a change in the charge state of the defect environment around the Eu. This prediction could also offer a new explanation for the saturation magnetization previously observed in GaN : Eu and other GaN:RE systems