38 research outputs found

    Energy-Efficient Neural Network Hardware Design and Circuit Techniques to Enhance Hardware Security

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    University of Minnesota Ph.D. dissertation. May 2019. Major: Electrical Engineering. Advisor: Chris Kim. 1 computer file (PDF); ix, 108 pages.Artificial intelligence (AI) algorithms and hardware are being developed at a rapid pace for emerging applications such as self-driving cars, speech/image/video recognition, deep learning, etc. Today’s AI tasks are mostly performed at remote datacenters, while in the future, more AI workloads are expected to run on edge devices. To fulfill this goal, innovative design techniques are needed to improve energy-efficiency, form factor, and as well as the security of AI chips. In this dissertation, two topics are focused on to address these challenges: building energy-efficient AI chips based on various neural network architectures, and designing “chip fingerprint” circuits as well as counterfeit chip sensors to improve hardware security. First of all, in order to deploy AI tasks on edge devices, we come up with various energy and area efficient computing platforms. One is a novel time-domain computing scheme for fully connected multi-layer perceptron (MLP) neural network and the other is an efficient binarized architecture for long short-term memory (LSTM) neural network. Secondly, to enhance the hardware security and ensure secure data communication between edge devices, we need to make sure the authenticity of the chip. Physical Unclonable Function (PUF) is a circuit primitive that can serve as a chip “fingerprint” by generating a unique ID for each chip. Another source of security concerns comes from the counterfeit ICs, and recycled and remarked ICs account for more than 80% of the counterfeit electronics. To effectively detect those counterfeit chips that have been physically compromised, we came up with a passive IC tamper sensor. This proposed sensor is demonstrated to be able to efficiently and reliably detect suspicious activities such as high temperature cycling, ambient humidity rise, and increased dust particles in the chip cavity

    Design and Implementation of Low Power SRAM Using Highly Effective Lever Shifters

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    The explosive growth of battery-operated devices has made low-power design a priority in recent years. In high-performance Systems-on-Chip, leakage power consumption has become comparable to the dynamic component, and its relevance increases as technology scales. These trends are even more evident for SRAM memory devices since they are a dominant source of standby power consumption in low-power application processors. The on-die SRAM power consumption is particularly important for increasingly pervasive mobile and handheld applications where battery life is a key design and technology attribute. In the SRAM-memory design, SRAM cells also comprise the most significant portion of the total chip. Moreover, the increasing number of transistors in the SRAM memories and the MOSs\u27 increasing leakage current in the scaled technologies have turned the SRAM unit into a power-hungry block for both dynamic and static viewpoints. Although the scaling of the supply voltage enables low-power consumption, the SRAM cells\u27 data stability becomes a major concern. Thus, the reduction of SRAM leakage power has become a critical research concern. To address the leakage power consumption in high-performance cache memories, a stream of novel integrated circuit and architectural level techniques are proposed by researchers including leakage-current management techniques, cell array leakage reduction techniques, bitline leakage reduction techniques, and leakage current compensation techniques. The main goal of this work was to improve the cell array leakage reduction techniques in order to minimize the leakage power for SRAM memory design in low-power applications. This study performs the body biasing application to reduce leakage current as well. To adjust the NMOSs\u27 threshold voltage and consequently leakage current, a negative DC voltage could be applied to their body terminal as a second gate. As a result, in order to generate a negative DC voltage, this study proposes a negative voltage reference that includes a trimming circuit and a negative level shifter. These enhancements are employed to a 10kb SRAM memory operating at 0.3V in a 65nm CMOS process

    Fault Injection Modeling Attacks on 65nm Arbiter and RO Sum PUFs via Environmental Changes

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    Physically Unclonable Functions (PUFs) are emerging as hardware security primitives. So-called strong PUFs provide a mechanism to authenticate chips which is inherently unique for every manufactured sample. To prevent cloning, modeling of the challenge-response pair (CRP) behavior should be infeasible. Machine learning (ML) algorithms are a well-known threat. Recently, repeatability imperfections of PUF responses have been identied as another threat. CMOS device noise renders a signicant fraction of the CRPs unstable, hereby providing a side channel for modeling attacks. In previous work, 65nm arbiter PUFs have been modeled as such with accuracies exceeding 97%. However, more PUF evaluations were required than for state-of-the-art ML approaches. In this work, we accelerate repeatability attacks by increasing the fraction of unstable CRPs. Response evaluation faults are triggered via environmental changes hereby. The attack speed, which is proportional to the fraction of unstable CRPs, increases with a factor 2.4 for both arbiter and ring oscillator (RO) sum PUFs. Data originates from a 65nm silicon chip and hence not from simulations

    Contributions on using embedded memory circuits as physically unclonable functions considering reliability issues

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    [eng] Moving towards Internet-of-Things (IoT) era, hardware security becomes a crucial research topic, because of the growing demand of electronic products that are remotely connected through networks. Novel hardware security primitives based on manufacturing process variability are proposed to enhance the security of the IoT systems. As a trusted root that provides physical randomness, a physically unclonable function is an essential base for hardware security. SRAM devices are becoming one of the most promising alternatives for the implementation of embedded physical unclonable functions as the start-up value of each bit-cell depends largely on the variability related with the manufacturing process. Not all bit-cells experience the same degree of variability, so it is possible that some cells randomly modify their logical starting value, while others will start-up always at the same value. However, physically unclonable function applications, such as identification and key generation, require more constant logical starting value to assure high reliability in PUF response. For this reason, some kind of post-processing is needed to correct the errors in the PUF response. Unfortunately, those cells that have more constant logic output are difficult to be detected in advance. This work characterizes by simulation the start-up value reproducibility proposing several metrics suitable for reliability estimation during design phases. The aim is to be able to predict by simulation the percentage of cells that will be suitable to be used as PUF generators. We evaluate the metrics results and analyze the start-up values reproducibility considering different external perturbation sources like several power supply ramp up times, previous internal values in the bit-cell, and different temperature scenarios. The characterization metrics can be exploited to estimate the number of suitable SRAM cells for use in PUF implementations that can be expected from a specific SRAM design.[cat] En l’era de la Internet de les coses (IoT), garantir la seguretat del hardware ha esdevingut un tema de recerca crucial, en especial a causa de la creixent demanda de productes electrònics que es connecten remotament a través de xarxes. Per millorar la seguretat dels sistemes IoT, s’han proposat noves solucions hardware basades en la variabilitat dels processos de fabricació. Les funcions físicament inclonables (PUF) constitueixen una font fiable d’aleatorietat física i són una base essencial per a la seguretat hardware. Les memòries SRAM s’estan convertint en una de les alternatives més prometedores per a la implementació de funcions físicament inclonables encastades. Això és així ja que el valor d’encesa de cada una de les cel·les que formen els bits de la memòria depèn en gran mesura de la variabilitat pròpia del procés de fabricació. No tots els bits tenen el mateix grau de variabilitat, així que algunes cel·les canvien el seu estat lògic d’encesa de forma aleatòria entre enceses, mentre que d’altres sempre assoleixen el mateix valor en totes les enceses. No obstant això, les funcions físicament inclonables, que s’utilitzen per generar claus d’identificació, requereixen un valor lògic d’encesa constant per tal d’assegurar una resposta fiable del PUF. Per aquest motiu, normalment es necessita algun tipus de postprocessament per corregir els possibles errors presents en la resposta del PUF. Malauradament, les cel·les que presenten una resposta més constant són difícils de detectar a priori. Aquest treball caracteritza per simulació la reproductibilitat del valor d’encesa de cel·les SRAM, i proposa diverses mètriques per estimar la fiabilitat de les cel·les durant les fases de disseny de la memòria. L'objectiu és ser capaç de predir per simulació el percentatge de cel·les que seran adequades per ser utilitzades com PUF. S’avaluen els resultats de diverses mètriques i s’analitza la reproductibilitat dels valors d’encesa de les cel·les considerant diverses fonts de pertorbacions externes, com diferents rampes de tensió per a l’encesa, els valors interns emmagatzemats prèviament en les cel·les, i diferents temperatures. Es proposa utilitzar aquestes mètriques per estimar el nombre de cel·les SRAM adients per ser implementades com a PUF en un disseny d‘SRAM específic.[spa] En la era de la Internet de las cosas (IoT), garantizar la seguridad del hardware se ha convertido en un tema de investigación crucial, en especial a causa de la creciente demanda de productos electrónicos que se conectan remotamente a través de redes. Para mejorar la seguridad de los sistemas IoT, se han propuesto nuevas soluciones hardware basadas en la variabilidad de los procesos de fabricación. Las funciones físicamente inclonables (PUF) constituyen una fuente fiable de aleatoriedad física y son una base esencial para la seguridad hardware. Las memorias SRAM se están convirtiendo en una de las alternativas más prometedoras para la implementación de funciones físicamente inclonables empotradas. Esto es así, puesto que el valor de encendido de cada una de las celdas que forman los bits de la memoria depende en gran medida de la variabilidad propia del proceso de fabricación. No todos los bits tienen el mismo grado de variabilidad. Así pues, algunas celdas cambian su estado lógico de encendido de forma aleatoria entre encendidos, mientras que otras siempre adquieren el mismo valor en todos los encendidos. Sin embargo, las funciones físicamente inclonables, que se utilizan para generar claves de identificación, requieren un valor lógico de encendido constante para asegurar una respuesta fiable del PUF. Por este motivo, normalmente se necesita algún tipo de posprocesado para corregir los posibles errores presentes en la respuesta del PUF. Desafortunadamente, las celdas que presentan una respuesta más constante son difíciles de detectar a priori. Este trabajo caracteriza por simulación la reproductibilidad del valor de encendido de celdas SRAM, y propone varias métricas para estimar la fiabilidad de las celdas durante las fases de diseño de la memoria. El objetivo es ser capaz de predecir por simulación el porcentaje de celdas que serán adecuadas para ser utilizadas como PUF. Se evalúan los resultados de varias métricas y se analiza la reproductibilidad de los valores de encendido de las celdas considerando varias fuentes de perturbaciones externas, como diferentes rampas de tensión para el encendido, los valores internos almacenados previamente en las celdas, y diferentes temperaturas. Se propone utilizar estas métricas para estimar el número de celdas SRAM adecuadas para ser implementadas como PUF en un diseño de SRAM específico

    Active hardware metering for intellectual property protection and security

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    Abstract We introduce the first active hardware metering scheme that aims to protect integrated circuits (IC) intellectual property (IP) against piracy and runtime tampering. The novel metering method simultaneously employs inherent unclonable variability in modern manufacturing technology, and functionality preserving alternations of the structural IC specifications. Active metering works by enabling the designers to lock each IC and to remotely disable it. The objectives are realized by adding new states and transitions to the original finite state machine (FSM) to create boosted finite state machines(BFSM) of the pertinent design. A unique and unpredictable ID generated by an IC is utilized to place an BFSM into the power-up state upon activation. The designer, knowing the transition table, is the only one who can generate input sequences required to bring the BFSM into the functional initial (reset) state. To facilitate remote disabling of ICs, black hole states are integrated within the BFSM. We introduce nine types of potential attacks against the proposed active metering method. We further describe a number of countermeasures that must be taken to preserve the security of active metering against the potential attacks. The implementation details of the method with the objectives of being low-overhead, unclonable, obfuscated, stable, while having a diverse set of keys is presented. The active metering method was implemented, synthesized and mapped on the standard benchmark circuits. Experimental evaluations illustrate that the method has a low-overhead in terms of power, delay, and area, while it is extremely resilient against the considered attacks
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