13,775 research outputs found

    A 10-bit Charge-Redistribution ADC Consuming 1.9 μW at 1 MS/s

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    This paper presents a 10 bit successive approximation ADC in 65 nm CMOS that benefits from technology scaling. It meets extremely low power requirements by using a charge-redistribution DAC that uses step-wise charging, a dynamic two-stage comparator and a delay-line-based controller. The ADC requires no external reference current and uses only one external supply voltage of 1.0 V to 1.3 V. Its supply current is proportional to the sample rate (only dynamic power consumption). The ADC uses a chip area of approximately 115--225 μm2. At a sample rate of 1 MS/s and a supply voltage of 1.0 V, the 10 bit ADC consumes 1.9 μW and achieves an energy efficiency of 4.4 fJ/conversion-step

    Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

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    CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

    A Modular Programmable CMOS Analog Fuzzy Controller Chip

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    We present a highly modular fuzzy inference analog CMOS chip architecture with on-chip digital programmability. This chip consists of the interconnection of parameterized instances of two different kind of blocks, namely label blocks and rule blocks. The architecture realizes a lattice partition of the universe of discourse, which at the hardware level means that the fuzzy labels associated to every input (realized by the label blocks) are shared among the rule blocks. This reduces the area and power consumption and is the key point for chip modularity. The proposed architecture is demonstrated through a 16-rule two input CMOS 1-μm prototype which features an operation speed of 2.5 Mflips (2.5×10^6 fuzzy inferences per second) with 8.6 mW power consumption. Core area occupation of this prototype is of only 1.6 mm 2 including the digital control and memory circuitry used for programmability. Because of the architecture modularity the number of inputs and rules can be increased with any hardly design effort.This work was supported in part by the Spanish C.I.C.Y.T under Contract TIC96-1392-C02- 02 (SIVA)

    Developing a framework of non-fatal occupational injury surveillance for risk control in palm oil mills

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    Non-fatal occupational injury (NFOI) and its risk factors have become a current global concern. The need of research towards the relationship between occupational injury and its risk factor is essential, to fulfil the purpose and setting the priority of implementing safety preventive approaches at workplace. This research intended to develop a framework of NFOI surveillance by using epidemiological data, noise exposure data and NFOI data among palm oil mills’ workers. A total of 420 respondents who assigned in operation and processing areas (OP) (n=333) and general or office workers (n=87) had voluntary participated in this research. A questionnaire session with respondents was held to obtain epidemiological data and NFOI information via validated questionnaire. Noise hazard monitoring was executed by using Sound Level Meter (SLM) for environmental noise monitoring and Personal Sound Dosimeter for personal noise monitoring. Gathered data were analysed in quantitative method by using statistical software IBM SPSS Statistic version 21 and a risk matrix table for injury risk rating evaluation. It was discovered that high noise exposure level (≥ 85 dB[A]) was significantly associated with non-fatal occupational injury among OP workers (φ=0.123, p<0.05) with OR=1.87 (95% CI, 1.080-3.235, p<0.05). Risk rating for reported NFOI was at moderate level, with minor cuts and scratches were the dominant type of injury (42.6%). Analysis of logistic regression indicated that working in shift, not wearing protective gloves, health problems such as shortness of breath and ringing in ears, and excessive noise level (≥ 85 dB[A]) were the risk factors of NFOI in palm oil mills among OP workers. A framework of nonfatal injury surveillance in palm oil mills was developed based on the findings with integration of risk management process and injury prevention principles. This framework is anticipated to help the management in decision making for preventive actions and early detection of occupational health effects among workers

    Reducing MOSFET 1/f Noise and Power Consumption by "Switched Biasing"

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    Switched biasing is proposed as a technique for reducing the 1/f noise in MOSFET's. Conventional techniques, such as chopping or correlated double sampling, reduce the effect of 1/f noise in electronic circuits, whereas the switched biasing technique reduces the 1/f noise itself. Whereas noise reduction techniques generally lead to more power consumption, switched biasing can reduce the power consumption. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its intrinsic 1/f noise. As the 1/f noise is reduced at its physical roots, high frequency circuits, in which 1/f noise is being upconverted, can also benefit. This is demonstrated by applying switched biasing in a 0.8 ¿m CMOS sawtooth oscillator. By periodically switching off the bias currents, during time intervals that they are not contributing to the circuit operation, a reduction of the 1/f noise induced phase noise by more than 8 dB is achieved, while the power consumption is also reduced by 30

    Systematic Comparison of HF CMOS Transconductors

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    Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments

    Mixed-signal CNN array chips for image processing

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    Due to their local connectivity and wide functional capabilities, cellular nonlinear networks (CNN) are excellent candidates for the implementation of image processing algorithms using VLSI analog parallel arrays. However, the design of general purpose, programmable CNN chips with dimensions required for practical applications raises many challenging problems to analog designers. This is basically due to the fact that large silicon area means large development cost, large spatial deviations of design parameters and low production yield. CNN designers must face different issues to keep reasonable enough accuracy level and production yield together with reasonably low development cost in their design of large CNN chips. This paper outlines some of these major issues and their solutions

    Transistor-Level Synthesis of Pipeline Analog-to-Digital Converters Using a Design-Space Reduction Algorithm

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    A novel transistor-level synthesis procedure for pipeline ADCs is presented. This procedure is able to directly map high-level converter specifications onto transistor sizes and biasing conditions. It is based on the combination of behavioral models for performance evaluation, optimization routines to minimize the power and area consumption of the circuit solution, and an algorithm to efficiently constraint the converter design space. This algorithm precludes the cost of lengthy bottom-up verifications and speeds up the synthesis task. The approach is herein demonstrated via the design of a 0.13 μm CMOS 10 bits@60 MS/s pipeline ADC with energy consumption per conversion of only 0.54 pJ@1 MHz, making it one of the most energy-efficient 10-bit video-rate pipeline ADCs reported to date. The computational cost of this design is of only 25 min of CPU time, and includes the evaluation of 13 different pipeline architectures potentially feasible for the targeted specifications. The optimum design derived from the synthesis procedure has been fine tuned to support PVT variations, laid out together with other auxiliary blocks, and fabricated. The experimental results show a power consumption of 23 [email protected] V and an effective resolution of 9.47-bit@1 MHz. Bearing in mind that no specific power reduction strategy has been applied; the mentioned results confirm the reliability of the proposed approach.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

    An Offset Cancelation Technique for Latch Type Sense Amplifiers

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    An offset compensation technique for a latch type sense amplifier is proposed in this paper. The proposed scheme is based on the recalibration of the charging/discharging current of the critical nodes which are affected by the device mismatches. The circuit has been designed in a 65 nm CMOS technology with 1.2 V core transistors. The auto-calibration procedure is fully digital. Simulation results are given verifying the operation for sampling a 5 Gb/s signal dissipating only 360 uW
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