676 research outputs found
R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
This report reviews current trends in the R&D of semiconductor pixellated
sensors for vertex tracking and radiation imaging. It identifies requirements
of future HEP experiments at colliders, needed technological breakthroughs and
highlights the relation to radiation detection and imaging applications in
other fields of science.Comment: 17 pages, 2 figures, submitted to the European Strategy Preparatory
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2D Detectors for Particle Physics and for Imaging Applications
The demands on detectors for particle detection as well as for medical and
astronomical X-ray imaging are continuously pushing the development of novel
pixel detectors. The state of the art in pixel detector technology to date are
hybrid pixel detectors in which sensor and read-out integrated circuits are
processed on different substrates and connected via high density interconnect
structures. While these detectors are technologically mastered such that large
scale particle detectors can be and are being built, the demands for improved
performance for the next generation particle detectors ask for the development
of monolithic or semi-monolithic approaches. Given the fact that the demands
for medical imaging are different in some key aspects, developments for these
applications, which started as particle physics spin-off, are becomming rather
independent. New approaches are leading to novel signal processing concepts and
interconnect technologies to satisfy the need for very high dynamic range and
large area detectors. The present state in hybrid and (semi-)monolithic pixel
detector development and their different approaches for particle physics and
imaging application is reviewed
HV/HR-CMOS sensors for the ATLAS upgradeâconcepts and test chip results
In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5Ă 1034 cmâ2 sâ1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology.
In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given
Status of HVCMOS developments for ATLAS
This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixelsâthe capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processes AMS H18, AMS H35 and LFoundry LFA15. Efficiency of 99.7% after neutron irradiation to 1015 neq/cm2W has been measured with the small area CCPD prototype in AMS H18 technology. About 84% of the particles are detected with a time resolution better than 25 ns. The sensor was implemented on a low resistivity substrate. The large area demonstrator sensor in AMS H35 process has been designed, produced and successfully tested. The sensor has been produced on different high resistivity substrates ranging from 80 Ωcm to more than 1 kΩ. Monolithic- and hybrid readout are both possible. In August 2016, six different monolithic pixel matrices for ATLAS with a total area of 1 cm2 have been submitted in LFoundry LFA15 process. The matrices implement column drain and triggered readout as well as waveform sampling capability on pixel level. Design details will be presented
Performance evaluation of a fully depleted monolithic pixel detector chip in 150 nm CMOS technology
The depleted monolithic active pixel sensor (DMAPS) is a new concept integrating full CMOS circuitry onto a (fully) depletable silicon substrate wafer. The realization of prototypes of the DMAPS concept relies on the availability of multiple well CMOS processes and highly resistive substrates. The CMOS foundry ESPROS Photonics offers both and was chosen for prototyping. Two prototypes, EPCB01 and EPCB02, developed in a 150 nm process on a highly resistive n-type wafer of 50 ”m thickness, were characterized. The prototypes have 352 square pixels of 40 ”m pitch and a small n-well charge collection node with very low capacitance of 5 fF (n+-implantation size: 5 ”m x 5 ”m) and about 150 transistors per pixel (CSA and discriminator plus a small digital part). The characterization of the prototypes demonstrates the proof of principle of the concept. Prior to irradiation the prototypes show a signal from a minimum ionizing particle ranging from 2400 e- to 3000 e- while the noise is 30 e- due to the low capacitance. After the irradiation of the prototypes with neutrons up to a fluence of 5âą1014 neutrons/cm2 the performance suffers from the radiation damage leading to a signal of 1000 e- and a higher noise of 60 e- due to the increase of the leakage current. The detection efficiency of the prototypes reduces from 94 % to 26 % after the fluence of 5âą1014 particles/cm2. Due to the small fill factor the detection efficiency shows are strong dependence on the position within the pixel after irradiation. Thus the DMAPS concept with low fill factor can be used for precise vertex reconstruction in High Energy Physics experiments without severe performance loss up to moderate fluences (14 particles/cm2). The expected particle fluences inside of the volume of the upgrade of the ATLAS pixel detector exceed this limit. However, possible applications could be at future linear collider (ILC or CLIC) experiments and B-factories where the low material budget is of particular importance and the fluences are much less and X-ray imaging with low energy photons which would benefit from the good noise performance
A review of advances in pixel detectors for experiments with high rate and radiation
The Large Hadron Collider (LHC) experiments ATLAS and CMS have established
hybrid pixel detectors as the instrument of choice for particle tracking and
vertexing in high rate and radiation environments, as they operate close to the
LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for
which the tracking detectors will be completely replaced, new generations of
pixel detectors are being devised. They have to address enormous challenges in
terms of data throughput and radiation levels, ionizing and non-ionizing, that
harm the sensing and readout parts of pixel detectors alike. Advances in
microelectronics and microprocessing technologies now enable large scale
detector designs with unprecedented performance in measurement precision (space
and time), radiation hard sensors and readout chips, hybridization techniques,
lightweight supports, and fully monolithic approaches to meet these challenges.
This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog.
Phy
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