Low-power, 10-Gbps 1.5-Vpp differential CMOS driver for a silicon electro-optic ring modulator

We present a novel driver circuit enabling electro-optic modulation with high extinction ratio from a co-designed silicon ring modulator. The driver circuit provides an asymmetric differential output at 10Gbps with a voltage swing up to 1.5V(pp) from a single 1.0V supply, maximizing the resonance-wavelength shift of depletion-type ring modulators while avoiding carrier injection. A test chip containing 4 reconfigurable driver circuits was fabricated in 40nm CMOS technology. The measured energy consumption for driving a 100fF capacitive load at 10Gbps was as low as 125fJ/bit and 220fJ/bit at 1V(pp) and 1.5V(pp) respectively. After flip-chip integration with ring modulators on a silicon-photonics chip, the power consumption was measured to be 210fJ/bit and 350fJ/bit respectively

1 V CMOS subthreshold log domain PDM

A new CMOS circuit strategy for very low-voltage Pulse-Duration Modulators (PDM) is proposed. Optimization of voltage supply scaling below the sum of threshold voltages is based on Instantaneous Log Companding processing through the MOSFET operating in weak inversion. A 1 V VLSI PDM circuit for very low-voltage audio applications such as Hearing Aids is presented, showing good agreement between simulated and experimental data.Comisión Interministerial de Ciencia y Tecnología TIC97-1159, TIC99-1084European Union 2306

A CMOS Spiking Neuron for Dense Memristor-Synapse Connectivity for Brain-Inspired Computing

Neuromorphic systems that densely integrate CMOS spiking neurons and nano-scale memristor synapses open a new avenue of brain-inspired computing. Existing silicon neurons have molded neural biophysical dynamics but are incompatible with memristor synapses, or used extra training circuitry thus eliminating much of the density advantages gained by using memristors, or were energy inefficient. Here we describe a novel CMOS spiking leaky integrate-and-fire neuron circuit. Building on a reconfigurable architecture with a single opamp, the described neuron accommodates a large number of memristor synapses, and enables online spike timing dependent plasticity (STDP) learning with optimized power consumption. Simulation results of an 180nm CMOS design showed 97% power efficiency metric when realizing STDP learning in 10,000 memristor synapses with a nominal 1M{\Omega} memristance, and only 13{\mu}A current consumption when integrating input spikes. Therefore, the described CMOS neuron contributes a generalized building block for large-scale brain-inspired neuromorphic systems.Comment: This is a preprint of an article accepted for publication in International Joint Conference on Neural Networks (IJCNN) 201

A 1.6 Gb/s, 3 mW CMOS receiver for optical communication

A 1.6 Gb/s receiver for optical communication has been designed and fabricated in a 0.25-μm CMOS process. This receiver has no transimpedance amplifier and uses the parasitic capacitor of the flip-chip bonded photodetector as an integrating element and resolves the data with a double-sampling technique. A simple feedback loop adjusts a bias current to the average optical signal, which essentially "AC couples" the input. The resulting receiver resolves an 11 μA input, dissipates 3 mW of power, occupies 80 μm x 50 μm of area and operates at over 1.6 Gb/s

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

An Ultra-Low-Power Oscillator with Temperature and Process Compensation for UHF RFID Transponder

This paper presents a 1.28MHz ultra-low-power oscillator with temperature and process compensation. It is very suitable for clock generation circuits used in ultra-high-frequency (UHF) radio-frequency identification (RFID) transponders. Detailed analysis of the oscillator design, including process and temperature compensation techniques are discussed. The circuit is designed using TSMC 0.18μm standard CMOS process and simulated with Spectre. Simulation results show that, without post-fabrication calibration or off-chip components, less than ±3% frequency variation is obtained from –40 to 85°C in three different process corners. Monte Carlo simulations have also been performed, and demonstrate a 3σ deviation of about 6%. The power for the proposed circuitry is only 1.18µW at 27°C

An Energy-Efficient, Dynamic Voltage Scaling Neural Stimulator for a Proprioceptive Prosthesis

Accepted versio