314 research outputs found
Throughput-Efficient Network-on-Chip Router Design with STT-MRAM
As the number of processor cores on a chip increases with the advance of CMOS technology, there has been a growing need of more efficient Network-on-Chip (NoC) design since communication delay has become a major bottleneck in large-scale multicore systems. In designing efficient input buffers of NoC routers for better performance and power efficiency, Spin-Torque Transfer Magnetic RAM (STT-MRAM) is regarded as a promising solution due to its nature of high density and near-zero leakage power. Previous work that adopts STT-MRAM in designing NoC router input buffer shows a limitation in minimizing the overhead of power consumption, even though it succeeds to some degree in achieving high network throughput by the use of SRAM to hide the long write latency of STT-MRAM.
In this thesis, we propose a novel input buffer design that depends solely on STT-MRAM without the need of SRAM to maximize the benefits of low leakage power and area efficiency inherent in STT-MRAM. In addition, we introduce power-efficient buffer refreshing schemes synergized with age-based switch arbitration that gives higher priority to older flits to remove unnecessary refreshing operations. On an average, we observed throughput improvements of 16% on synthetic workloads and benchmarks
Design of Resistive Synaptic Devices and Array Architectures for Neuromorphic Computing
abstract: Over the past few decades, the silicon complementary-metal-oxide-semiconductor (CMOS) technology has been greatly scaled down to achieve higher performance, density and lower power consumption. As the device dimension is approaching its fundamental physical limit, there is an increasing demand for exploration of emerging devices with distinct operating principles from conventional CMOS. In recent years, many efforts have been devoted in the research of next-generation emerging non-volatile memory (eNVM) technologies, such as resistive random access memory (RRAM) and phase change memory (PCM), to replace conventional digital memories (e.g. SRAM) for implementation of synapses in large-scale neuromorphic computing systems.
Essentially being compact and “analog”, these eNVM devices in a crossbar array can compute vector-matrix multiplication in parallel, significantly speeding up the machine/deep learning algorithms. However, non-ideal eNVM device and array properties may hamper the learning accuracy. To quantify their impact, the sparse coding algorithm was used as a starting point, where the strategies to remedy the accuracy loss were proposed, and the circuit-level design trade-offs were also analyzed. At architecture level, the parallel “pseudo-crossbar” array to prevent the write disturbance issue was presented. The peripheral circuits to support various parallel array architectures were also designed. One key component is the read circuit that employs the principle of integrate-and-fire neuron model to convert the analog column current to digital output. However, the read circuit is not area-efficient, which was proposed to be replaced with a compact two-terminal oscillation neuron device that exhibits metal-insulator-transition phenomenon.
To facilitate the design exploration, a circuit-level macro simulator “NeuroSim” was developed in C++ to estimate the area, latency, energy and leakage power of various neuromorphic architectures. NeuroSim provides a wide variety of design options at the circuit/device level. NeuroSim can be used alone or as a supporting module to provide circuit-level performance estimation in neural network algorithms. A 2-layer multilayer perceptron (MLP) simulator with integration of NeuroSim was demonstrated to evaluate both the learning accuracy and circuit-level performance metrics for the online learning and offline classification, as well as to study the impact of eNVM reliability issues such as data retention and write endurance on the learning performance.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201
2022 roadmap on neuromorphic computing and engineering
Modern computation based on von Neumann architecture is now a mature cutting-edge science. In the von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 10 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges for each research area. We hope that this roadmap will be a useful resource by providing a concise yet comprehensive introduction to readers outside this field, for those who are just entering the field, as well as providing future perspectives for those who are well established in the neuromorphic computing community
Neuromorphic computing using non-volatile memory
Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems. We first review recent advances in the application of NVM devices to three computing paradigms: spiking neural networks (SNNs), deep neural networks (DNNs), and ‘Memcomputing’. In SNNs, NVM synaptic connections are updated by a local learning rule such as spike-timing-dependent-plasticity, a computational approach directly inspired by biology. For DNNs, NVM arrays can represent matrices of synaptic weights, implementing the matrix–vector multiplication needed for algorithms such as backpropagation in an analog yet massively-parallel fashion. This approach could provide significant improvements in power and speed compared to GPU-based DNN training, for applications of commercial significance. We then survey recent research in which different types of NVM devices – including phase change memory, conductive-bridging RAM, filamentary and non-filamentary RRAM, and other NVMs – have been proposed, either as a synapse or as a neuron, for use within a neuromorphic computing application. The relevant virtues and limitations of these devices are assessed, in terms of properties such as conductance dynamic range, (non)linearity and (a)symmetry of conductance response, retention, endurance, required switching power, and device variability.11Yscopu
Study of modulation techniques for multiple access satellite communications
Multiple access communication utilizing small ground stations for satellite communication modulation - multiplexing technique
Stochastic Memory Devices for Security and Computing
With the widespread use of mobile computing and internet of things, secured communication and chip authentication have become extremely important. Hardware-based security concepts generally provide the best performance in terms of a good standard of security, low power consumption, and large-area density. In these concepts, the stochastic properties of nanoscale devices, such as the physical and geometrical variations of the process, are harnessed for true random number generators (TRNGs) and physical unclonable functions (PUFs). Emerging memory devices, such as resistive-switching memory (RRAM), phase-change memory (PCM), and spin-transfer torque magnetic memory (STT-MRAM), rely on a unique combination of physical mechanisms for transport and switching, thus appear to be an ideal source of entropy for TRNGs and PUFs. An overview of stochastic phenomena in memory devices and their use for developing security and computing primitives is provided. First, a broad classification of methods to generate true random numbers via the stochastic properties of nanoscale devices is presented. Then, practical implementations of stochastic TRNGs, such as hardware security and stochastic computing, are shown. Finally, future challenges to stochastic memory development are discussed
A telecom analytics framework for dynamic quality of service management
Since the beginning of Internet, Internet Service Providers (ISP) have seen the need of giving to users? traffic different treatments defined by agree- ments between ISP and customers. This procedure, known as Quality of Service Management, has not much changed in the last years (DiffServ and Deep Pack-et Inspection have been the most chosen mechanisms). However, the incremen-tal growth of Internet users and services jointly with the application of recent Ma- chine Learning techniques, open up the possibility of going one step for-ward in the smart management of network traffic. In this paper, we first make a survey of current tools and techniques for QoS Management. Then we intro-duce clustering and classifying Machine Learning techniques for traffic charac-terization and the concept of Quality of Experience. Finally, with all these com-ponents, we present a brand new framework that will manage in a smart way Quality of Service in a telecom Big Data based scenario, both for mobile and fixed communications
Architectural Techniques for Multi-Level Cell Phase Change Memory Based Main Memory
Phase change memory (PCM) recently has emerged as a promising technology to meet the fast growing demand for large capacity main memory in modern computing systems. Multi-level cell (MLC) PCM storing multiple bits in a single cell offers high density with low per-byte fabrication cost. However, PCM suffers from long write latency, short cell endurance, limited write throughput and high peak power, which makes it challenging to be integrated in the memory hierarchy.
To address the long write latency, I propose write truncation to reduce the number of write iterations with the assistance of an extra error correction code (ECC). I also propose form switch (FS) to reduce the storage overhead of the ECC. By storing highly compressible lines in single level cell (SLC) form, FS improves read latency as well.
To attack the short cell endurance and large peak power, I propose elastic RESET (ER) to construct triple-level cell PCM. By reducing RESET energy, ER significantly reduces peak power and prolongs PCM lifetime.
To improve the write concurrency, I propose fine-grained write power budgeting (FPB) observing a global power budget and regulates power across write iterations according to the step-down power demand of each iteration. A global charge pump is also integrated onto a DIMM to boost power for hot PCM chips while staying within the global power budget.
To further reduce the peak power, I propose intra-write RESET scheduling distributing cell RESET initializations in the whole write operation duration, so that the on-chip charge pump size can also be reduced
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