Ultra high data rate CMOS front ends

The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology

SiGe-based broadband and high suppression frequency doubler ICs for wireless communications

制度:新 ; 報告番号:甲3419号 ; 学位の種類:博士(工学) ; 授与年月日:2011/9/15 ; 早大学位記番号:新574

Ultra high data rate CMOS FEs

The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

RF CMOS Oscillators for Modern Wireless Applications

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include: Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMO

Millimeter-Scale and Energy-Efficient RF Wireless System

This dissertation focuses on energy-efficient RF wireless system with millimeter-scale dimension, expanding the potential use cases of millimeter-scale computing devices. It is challenging to develop RF wireless system in such constrained space. First, millimeter-sized antennae are electrically-small, resulting in low antenna efficiency. Second, their energy source is very limited due to the small battery and/or energy harvester. Third, it is required to eliminate most or all off-chip devices to further reduce system dimension. In this dissertation, these challenges are explored and analyzed, and new methods are proposed to solve them. Three prototype RF systems were implemented for demonstration and verification. The first prototype is a 10 cubic-mm inductive-coupled radio system that can be implanted through a syringe, aimed at healthcare applications with constrained space. The second prototype is a 3x3x3 mm far-field 915MHz radio system with 20-meter NLOS range in indoor environment. The third prototype is a low-power BLE transmitter using 3.5x3.5 mm planar loop antenna, enabling millimeter-scale sensors to connect with ubiquitous IoT BLE-compliant devices. The work presented in this dissertation improves use cases of millimeter-scale computers by presenting new methods for improving energy efficiency of wireless radio system with extremely small dimensions. The impact is significant in the age of IoT when everything will be connected in daily life.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/147686/1/yaoshi_1.pd

RF CMOS Oscillators for Modern Wireless Applications

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include: Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMO

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Design And Implementation Of An X-Band Passive Rfid Tag

This research presents a novel fully integrated energy harvester, matching network, matching network,matching network, matching network,matching network, matching network, matching network, multi-stage RF-DC rectifier, mode selector, RC oscillator, LC oscillator, and X-band power amplifier implemented in IBM 0.18-µm RF CMOS technology. We investigated different matching schemes, antennas, and rectifiers with focus on the interaction between building blocks. Currently the power amplifier gives the maximum output power of 5.23 dBm at 9.1GHz. The entire RFID tag circuit was designed to operate in low power consumption. Voltage sensor circuit which generates the enable signal was designed to operate in very low current. All the test blocks of the RFID tag were tested. The smaller size and the cost of the RFID tag are critical for widespread adoption of the technology. The cost of the RFID tag can be lowered by implementing an on-chip antenna. We were able to develop, fabricate, and implement a fully integrated RFID tag in a smaller size (3 mm X 1.5 mm) than the existing tags. With further modifications, this could be used as a commercial low cost RFID tag

Integrated circuits for efficient power delivery using pulse-width-modulation

Circuits and architectures for efficient power delivery have become crucial in emerging smart systems. Switching power amplifiers (PA) are very attractive for such applications, because they exhibit better efficiency compared to linear PA designs, due to saturated operation. Switching PAs also allow for utilization of deep submicron CMOS technologies, due to which these designs can be easily integrated with digital circuits, and can benefit from process scaling, in performance as well as in area. Pulse-width-modulation (PWM) is commonly used with switching PAs. A PWM signal typically employs a high-frequency switching pulse waveform as a carrier signal, wherein the pulse-width or duty-cycle of each pulse is modulated by a given low-frequency input signal. The carrier frequency can vary from several kHz to GHz, and is typically determined by the target application. In this thesis, efficient power-delivery circuits that use PWM with switching class-D stages are presented. Advanced circuit techniques, as well as architectures for PWM are proposed to enhance efficiency and circumvent the limitations of conventional architectures. A digitally-intensive transmitter using RF-PWM with a class-D PA is described in the first part of the thesis. The use of carrier switching for alleviating the dynamic range limitation that can be observed in classical RF-PWM implementations is introduced. The approach employs the full carrier frequency for half of the amplitude range, and the second harmonic of half of the carrier frequency, for the remainder of the amplitude range. This concept not only allows the transmitter to drive modulated signals with large peak-to-average power ratio (PAPR), but also improves the back-off efficiency due to reduced switching losses in the half carrier-frequency mode. A glitch-free phase selector is proposed that removes the deleterious glitches that can occur at the input data transitions. The phase-selector also prevents D flip-flop setup-and-hold time violations. The transmitter has been implemented in a 130-nm CMOS process. The measured peak output power and power-added-efficiency (PAE) are 25.6 dBm and 34%, respectively. While driving 802.11g 20-MHz 64-QAM OFDM signals, the average measured output power is 18.3 dBm and the PAE is 16%, with an EVM of -25.5 dB. The second part of the thesis describes a high-speed driver that provides a PWM output using a class-D PA. A PLL-based architecture is employed which eliminates the requirement for a precise ramp or triangular signal generator, and a high-speed comparator, which are typically used for PWM generation. Multi-level signaling is proposed to enhance back-off as well as peak efficiency, which is critical for signals with high PAPR. A differential, folded PWM scheme is introduced to achieve highly linear operation. 3-level operation is achieved without the requirement for additional supply source or sink paths, while 5-level operation is achieved with additional supply source and sink paths, compared to 2-level operation. The PWM driver has been implemented in a 130-nm CMOS process and can operate with a switching frequency of 40-to-170 MHz. For 2/3/5-level PA operation, with a 500 kHz sinusoidal input and 60 MHz switching frequency, the measured THD is -61/-62/-53 dB and corresponding efficiency is 71/83/86% with 175/200/220 mW output power level, respectively. Performance has also been verified for 2/3-level PA operation with a high PAPR signal with 500 kHz bandwidth. While intended as a general purpose amplifier, the approach is well-suited for applications such as power-line communications (PLC). The final part of the thesis introduces an efficient buck/buck-boost reconfigurable LED driver that supports PWM and PFM operation. The driver is based on peak current control. Rectified sin as well as sin² functions are employed in the reference signal to improve the power factor (PF) and total harmonic distortion (THD) of the buck and buck-boost converters. The design ensures that the peak of the inductor current maintains a constant level that is invariant for different AC line voltages. The operating mode of the design can be changed between PWM and PFM. The LED driver has been implemented in a 130-nm CMOS process. PF and THD are improved when the proposed reference is employed, and peak PF and lowest THD are 0.995/0.983/0.996 and 7.8/6.2/3.5% for the buck (PWM), buck (PFM), buck-boost (PFM) cases, respectively. The corresponding peak efficiency for the three cases is 88/92/91%, respectively.Electrical and Computer Engineerin