A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Design and Analysis of an Asynchronous Microcontroller

This dissertation presents the design of the most complex MTNCL circuit to date. A fully functional MTNCL MSP430 microcontroller is designed and benchmarked against an open source synchronous MSP430. The designs are compared in terms of area, active energy, and leakage energy. Techniques to reduce MTNCL pipeline activity and improve MTNCL register file area and power consumption are introduced. The results show the MTNCL design to have superior leakage power characteristics. The area and active energy comparisons highlight the need for better MTNCL logic synthesis techniques

Ultra-Low Leakage, Energy-Efficient Digital Integrated Circuit and System Design

The advances of the complementary metal-oxide-semiconductor (CMOS) technology manufacturing and design over the years have enabled a diverse range of applications across the power consumption, performance, and area (PPA) spectra. Many of the recent and prospective applications rely on the availability of energy-autonomous, miniaturized systems, i.e., ultra-low power (ULP) VLSI systems, which are generally characterized by extreme resource limitations. Some examples of applications are wireless sensing platforms, body-area sensor networks (BASN), biomedical and implantable devices, wearables, hearables, and monitors. Within the context of such applications, the key requirements are long lifetime and miniaturized size (sub-/millimeter-scale). In order to enable both requirements, energy-efficiency is the key metric. It allows for extended battery lifetime and operation with the energy that can be harvested from the environment, and it limits the size (volume) of the energy sources utilized to power these systems. Ultra-low voltage (ULV) operation is a key technique in which the VDD of circuits is reduced from nominal to near or below the threshold voltage of the transistor. It is a powerful knob that has been largely exploited by designers in order to achieve ultra-low power consumption and high energy-efficiency in CMOS. Existing ULP VLSI systems typically operate at a lower supply voltage thereby reducing their energy consumption by one to two orders of magnitude in order to enable the aforementioned applications. While supply voltage scaling is a promising measure for achieving low power and reducing energy consumption, it brings up several challenges. One critical issue is the leakage energy dissipated by the devices, which is magnified in portion to the total energy consumption at ULV. The reason is that, as VDD scales from nominal to near-threshold and sub-threshold, transistors become increasingly slower and they accumulate more leakage (i.e., static) power over longer cycle times. This energy waste accounts for a significant portion of the system's total energy consumption, offsets the gains provided by voltage scaling, defines the minimum energy per operation, and poses a practical limit for the system's energy-efficiency. This thesis presents selected research works on ultra-low leakage, energy-efficient digital integrated circuit design. More specifically, it describes novel and key techniques for minimizing the energy waste of idle/underutilized and always-on hardware. The main goal of such techniques is to push the envelope of energy-efficiency in energy-autonomous, miniaturized VLSI systems. Such techniques are applied to key building blocks of emerging mobile and embedded computing devices resulting in state-of-the-art energy-efficiencies

Ultra-Low Power and Radiation Hardened Asynchronous Circuit Design

This dissertation proposes an ultra-low power design methodology called bit-wise MTNCL for bit-wise pipelined asynchronous circuits, which combines multi-threshold CMOS (MTCMOS) with bit-wise pipelined NULL Convention Logic (NCL) systems. It provides the leakage power advantages of an all high-Vt implementation with a reasonable speed penalty compared to the all low-Vt implementation, and has negligible area overhead. It was enhanced to handle indeterminate standby states. The original MTNCL concept was enhanced significantly by sleeping Registers and Completion Logic as well as Combinational circuits to reduce area, leakage power, and energy per operation. This dissertation also develops an architecture that allows NCL circuits to recover from a Single Event Upset (SEU) or Single Event Latchup (SEL) fault without any data loss. Finally, an accurate throughput derivation formula for pipelined NCL circuits was developed, which can be used for static timing analysis

CAD Tool Design for NCL and MTNCL Asynchronous Circuits

This thesis presents an implementation of a method developed to readily convert Boolean designs into an ultra-low power asynchronous design methodology called MTNCL, which combines multi-threshold CMOS (MTCMOS) with NULL Convention Logic (NCL) systems. MTNCL provides the leakage power advantages of an all high-Vt implementation with a reasonable speed penalty compared to the all low-Vt implementation, and has negligible area overhead. The proposed tool utilizes industry-standard CAD tools. This research also presents an Automated Gate-Level Pipelining with Bit-Wise Completion (AGLPBW) method to maximize throughput of delay-insensitive full-word pipelined NCL circuits. These methods have been integrated into the Mentor Graphics and Synopsis CAD tools, using a C-program, which performs the majority of the computations, such that the method can be easily ported to other CAD tool suites. Both methods have been successfully tested on circuits, including a 4-bit × 4-bit multiplier, an unsigned Booth2 multiplier, and a 4-bit/8-operation arithmetic logic unit (ALU

Designing energy-efficient sub-threshold logic circuits using equalization and non-volatile memory circuits using memristors

The very large scale integration (VLSI) community has utilized aggressive complementary metal-oxide semiconductor (CMOS) technology scaling to meet the ever-increasing performance requirements of computing systems. However, as we enter the nanoscale regime, the prevalent process variation effects degrade the CMOS device reliability. Hence, it is increasingly essential to explore emerging technologies which are compatible with the conventional CMOS process for designing highly-dense memory/logic circuits. Memristor technology is being explored as a potential candidate in designing non-volatile memory arrays and logic circuits with high density, low latency and small energy consumption. In this thesis, we present the detailed functionality of multi-bit 1-Transistor 1-memRistor (1T1R) cell-based memory arrays. We present the performance and energy models for an individual 1T1R memory cell and the memory array as a whole. We have considered TiO2- and HfOx-based memristors, and for these technologies there is a sub-10% difference between energy and performance computed using our models and HSPICE simulations. Using a performance-driven design approach, the energy-optimized TiO2-based RRAM array consumes the least write energy (4.06 pJ/bit) and read energy (188 fJ/bit) when storing 3 bits/cell for 100 nsec write and 1 nsec read access times. Similarly, HfOx-based RRAM array consumes the least write energy (365 fJ/bit) and read energy (173 fJ/bit) when storing 3 bits/cell for 1 nsec write and 200 nsec read access times. On the logic side, we investigate the use of equalization techniques to improve the energy efficiency of digital sequential logic circuits in sub-threshold regime. We first propose the use of a variable threshold feedback equalizer circuit with combinational logic blocks to mitigate the timing errors in digital logic designed in sub-threshold regime. This mitigation of timing errors can be leveraged to reduce the dominant leakage energy by scaling supply voltage or decreasing the propagation delay. At the fixed supply voltage, we can decrease the propagation delay of the critical path in a combinational logic block using equalizer circuits and, correspondingly decrease the leakage energy consumption. For a 8-bit carry lookahead adder designed in UMC 130 nm process, the operating frequency can be increased by 22.87% (on average), while reducing the leakage energy by 22.6% (on average) in the sub-threshold regime. Overall, the feedback equalization technique provides up to 35.4% lower energy-delay product compared to the conventional non-equalized logic. We also propose a tunable adaptive feedback equalizer circuit that can be used with sequential digital logic to mitigate the process variation effects and reduce the dominant leakage energy component in sub-threshold digital logic circuits. For a 64-bit adder designed in 130 nm our proposed approach can reduce the normalized delay variation of the critical path delay from 16.1% to 11.4% while reducing the energy-delay product by 25.83% at minimum energy supply voltage. In addition, we present detailed energy-performance models of the adaptive feedback equalizer circuit. This work serves as a foundation for the design of robust, energy-efficient digital logic circuits in sub-threshold regime

Identifying worst case test vectors for FPGA exposed to total ionization dose using design for testability techniques

Electronic devices often operate in harsh environments which contain a variation of radiation sources. Radiation may cause different kinds of damage to proper operation of the devices. Their sources can be found in terrestrial environments, or in extra-terrestrial environments like in space, or in man-made radiation sources like nuclear reactors, biomedical devices and high energy particles physics experiments equipment. Depending on the operation environment of the device, the radiation resultant effect manifests in several forms like total ionizing dose effect (TID), or single event effects (SEEs) such as single event upset (SEU), single event gate rupture (SEGR), and single event latch up (SEL). TID effect causes an increase in the delay and the leakage current of CMOS circuits which may damage the proper operation of the integrated circuit. To ensure proper operation of these devices under radiation, thorough testing must be made especially in critical applications like space and military applications. Although the standard which describes the procedure for testing electronic devices under radiation emphasizes the use of worst case test vectors (WCTVs), they are never used in radiation testing due to the difficulty of generating these vectors for circuits under test. For decades, design for testability (DFT) has been the best choice for test engineers to test digital circuits in industry. It has become a very mature technology that can be relied on. DFT is usually used with automatic test patterns generation (ATPG) software to generate test vectors to test application specific integrated circuits (ASICs), especially with sequential circuits, against faults like stuck at faults and path delay faults. Surprisingly, however, radiation testing has not yet made use of this reliable technology. In this thesis, a novel methodology is proposed to extend the usage of DFT to generate WCTVs for delay failure in Flash based field programmable gate arrays (FPGAs) exposed to total ionizing dose (TID). The methodology is validated using MicroSemi ProASIC3 FPGA and cobalt 60 facility