Design of low-voltage power efficient frequency dividers in folded MOS current mode logic

In this paper we propose a methodology to design high-speed, power-efficient static frequency dividers based on the low-voltage Folded MOS Current Mode Logic (FMCML) approach. A modeling strategy to analyze the dependence of propagation delay and power consumption on the bias currents of the divide-by-2 (DIV2) cell is introduced. We demonstrate that the behavior of the FMCML DIV2 cell is different both from the one of the conventional MCML DFF (D-type Flip-Flop) and from FMCML DFF without a level shifter. Then an analytical strategy to optimize the divider in different design scenarios: maximum speed, minimum power-delay product (PDP) or minimum energy-delay product (EDP) is presented. The possibility to scale the bias currents through the divider stages without affecting the speed performance is also investigated. The proposed analytical approach allows to gain a deep insight into the circuit behavior and to comprehensively optimize the different design tradeoffs. The derived models and design guidelines are validated against transistor level simulations referring to a commercial 28nm FDSOI CMOS process. Different divide-by-8 circuits following different optimization strategies have been designed in the same 28nm CMOS technology showing the effectiveness of the proposed methodology

Modeling Emerging Semiconductor Devices for Circuit Simulation

Circuit simulation is an indispensable part of modern IC design. The significant cost of fabrication has driven researchers to verify the chip functionality through simulation before submitting the design for final fabrication. With the impending end of Moore’s Law, researchers all over the world are looking for new devices with enhanced functionality. A plethora of promising emerging devices has been proposed in recent years. In order to leverage the full potential of such devices, circuit designers need fast, reliable models for SPICE simulation to explore different applications. Most of these new devices have complex underlying physical mechanism rendering the model development an extremely challenging task. For the models to be of practical use, they have to enable fast and accurate simulation that rules out the possibility of numerically solving a system of partial differential equations to arrive at a solution. In this chapter, we show how different modeling approaches can be used to simulate three emerging semiconductor devices namely, silicon- on- insulator four gate transistor(G4FET), perimeter gated single photon avalanche diode (PG-SPAD) and insulator-metal transistor (IMT) device with volatile memristance. All the models have been verified against experimental /TCAD data and implemented in commercial circuit simulator

Proceedings of the Cold Electronics Workshop

The benefits and problems of the use of cold semiconductor electronics and the research and development effort required to bring cold electronics into more widespread use were examined

MOS CURRENT MODE LOGIC (MCML) ANALYSIS FOR QUIET DIGITAL CIRCUITRY AND CREATION OF A STANDARD CELL LIBRARY FOR REDUCING THE DEVELOPMENT TIME OF MIXED-SIGNAL CHIPS

Many modern digital systems use forms of CMOS logical implementation due to the straight forward design nature of CMOS logic and minimal device area since CMOS uses fewer transistors than other logic families. To achieve high-performance requirements in mixed-signal chip development and quiet, noiseless circuitry, this thesis provides an alternative toCMOSin the form of MOS Current Mode Logic (MCML). MCML dissipates constant current and does not produce noise during value changing in a circuit CMOS circuits do. CMOS logical networks switch during clock ticks and with every device switching, noise is created on the supply and ground to deal with the transitions. Creating a noiseless standard cell library with MCML allows use of circuitry that uses low voltage switching with 1.5V between logic levels in a quiet or mixed-signal environment as opposed to the full rail to rail swinging of CMOS logic. This allows cohesive implementation with analog circuitry on the same chip due to constant current and lower switching ranges not creating rail noise during digital switching. Standard cells allow for the Cadence tools to automatically generate circuits and Cadence serves as the development platform for the MCML standard cells. The theory surrounding MCML is examined along with current and future applications well-suited for MCML are researched and explored with the goal of highlighting valid candidate circuits for MCML. Inverters and NAND gates with varying current drives are developed to meet these specialized goals and are simulated to prove viability for quiet, mixed-signal applications. Analysis and results show that MCML is a superior implementation choice compared toCMOSfor high speed and mixed signal applications due to frequency independent power dissipation and lack of generated noise during operation. Noise results show rail current deviations of 50nA to 300nA during switching over an average operating current of 20µA to 80µA respectively. The multiple order of magnitude difference between noise and signal allow the MCML cells to dissipate constant power and thus perform with no noise added to a system. Additional simulated results of a 31-stage ring oscillator result in a frequency for MCML of 1.57GHz simulated versus the 150.35MHz that MOSIS tested on a fabricated 31-stage CMOS oscillator. The layouts designed for the standard cell library conform to existing On Semiconductor ami06 technology dimensions and allow for design of any logical function to be fabricated. The I/O signals of each cell operate at the same input and output voltage swings which allow seamless integration with each other for implementation in any logical configuration

Design and Analysis of Robust Low Voltage Static Random Access Memories.

Static Random Access Memory (SRAM) is an indispensable part of most modern VLSI designs and dominates silicon area in many applications. In scaled technologies, maintaining high SRAM yield becomes more challenging since they are particularly vulnerable to process variations due to 1) the minimum sized devices used in SRAM bitcells and 2) the large array sizes. At the same time, low power design is a key focus throughout the semiconductor industry. Since low voltage operation is one of the most effective ways to reduce power consumption due to its quadratic relationship to energy savings, lowering the minimum operating voltage (Vmin) of SRAM has gained significant interest. This thesis presents four different approaches to design and analyze robust low voltage SRAM: SRAM analysis method improvement, SRAM bitcell development, SRAM peripheral optimization, and advance device selection. We first describe a novel yield estimation method for bit-interleaved voltage-scaled 8-T SRAMs. Instead of the traditional trade-off between write and read, the trade-off between write and half select disturb is analyzed. In addition, this analysis proposes a method to find an appropriate Write Word-Line (WWL) pulse width to maximize yield. Second, low leakage 10-T SRAM with speed compensation scheme is proposed. During sleep mode of a sensor application, SRAM retaining data cannot be shut down so it is important to minimize leakage in SRAM. This work adopts several leakage reduction techniques while compensating performance. Third, adaptive write architecture for low voltage 8-T SRAMs is proposed. By adaptively modulating WWL width and voltage level, it is possible to achieve low power consumption while maintaining high yield without excessive performance degradation. Finally, low power circuit design based on heterojunction tunneling transistors (HETTs) is discussed. HETTs have a steep subthreshold swing beneficial for low voltage operation. Device modeling and design of logic and SRAM are proposed.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91569/1/daeyeonk_1.pd

Research on low power technology by AC power supply circuits

制度:新 ; 報告番号:甲3692号 ; 学位の種類:博士(工学) ; 授与年月日:2012/9/15 ; 早大学位記番号:新6060Waseda Universit

Silicon on ferroelectric insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

Title from PDF of title page, viewed on March 12, 2014Thesis advisor: Masud H. ChowdhuryVitaIncludes bibliographical references (pages 116-131)Thesis (M. S.)--School of Computer and Engineering. University of Missouri--Kansas City, 2013Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in subnanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor’s Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-lowpower applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.Abstract -- List of illustrations - List of tables -- Acknowledgements -- Dedication -- Introduction -- Carbon nanotube field effect transistor -- Multi-gate transistors -FinFET -- Subthreshold swing -- Tunneling field effect transistors -- I-mos and nanowire fets -- Ferroelectric based field effect transistors -- An analytical model to approximate the subthreshold swing for soi-finfet -- Silicon-on-ferroelectric insulator field effect transistor (SOF-FET) -- Current-voltage characteristics of sof-fet -- Advantages, manufacturing process and future work of the proposed device -- Appendix -- Reference

Baseband analog front-end and digital back-end for reconfigurable multi-standard terminals

Multimedia applications are driving wireless network operators to add high-speed data services such as Edge (E-GPRS), WCDMA (UMTS) and WLAN (IEEE 802.11a,b,g) to the existing GSM network. This creates the need for multi-mode cellular handsets that support a wide range of communication standards, each with a different RF frequency, signal bandwidth, modulation scheme etc. This in turn generates several design challenges for the analog and digital building blocks of the physical layer. In addition to the above-mentioned protocols, mobile devices often include Bluetooth, GPS, FM-radio and TV services that can work concurrently with data and voice communication. Multi-mode, multi-band, and multi-standard mobile terminals must satisfy all these different requirements. Sharing and/or switching transceiver building blocks in these handsets is mandatory in order to extend battery life and/or reduce cost. Only adaptive circuits that are able to reconfigure themselves within the handover time can meet the design requirements of a single receiver or transmitter covering all the different standards while ensuring seamless inter-interoperability. This paper presents analog and digital base-band circuits that are able to support GSM (with Edge), WCDMA (UMTS), WLAN and Bluetooth using reconfigurable building blocks. The blocks can trade off power consumption for performance on the fly, depending on the standard to be supported and the required QoS (Quality of Service) leve