A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design

This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors the proposed circuit is only composed of a single two n-channel MOSFET-based inverting voltage buffer, three passive components, and one NMOS-based voltage-controlled resistor, which is with advantage used to electronically control the pole frequency of the filter in range 103 kHz to 18.3 MHz. The proposed filter is also very suitable for low-voltage operation, since between its supply rails it uses only two MOSFETs. In the paper the effect of load is investigated. In addition, in order to suppress the effect of non-zero output resistance of the inverting voltage buffer, two compensation techniques are also introduced. The theoretical results are verified by SPICE simulations using PTM 90 nm level-7 CMOS process BSIM3v3 parameters, where +/- 0.45 V supply voltages are used. Moreover, the behavior of the proposed filter was also experimentally measured using readily available array transistors CD4007UB by Texas Instruments

Tunable n-path notch filters for blocker suppression: modeling and verification

N-path switched-RC circuits can realize filters with very high linearity and compression point while they are tunable by a clock frequency. In this paper, both differential and single-ended N-path notch filters are modeled and analyzed. Closed-form equations provide design equations for the main filtering characteristics and nonidealities such as: harmonic mixing, switch resistance, mismatch and phase imbalance, clock rise and fall times, noise, and insertion loss. Both an eight-path single-ended and differential notch filter are implemented in 65-nm CMOS technology. The notch center frequency, which is determined by the switching frequency, is tunable from 0.1 to 1.2 GHz. In a 50- environment, the N-path filters provide power matching in the passband with an insertion loss of 1.4–2.8 dB. The rejection at the notch frequency is 21–24 dB,P1 db> + 2 dBm, and IIP3 > + 17 dBm

Single-input Multiple-output Tunable Log-domain Current-mode Universal Filter

This paper describes the design of a current-mode single-input multiple-output (SIMO) universal filter based on the log-domain filtering concept. The circuit is a direct realization of a first-order differential equation for obtaining the lossy integrator circuit. Lossless integrators are realized by log-domain lossy integrators. The proposed filter comprises only two grounded capacitors and twenty-four transistors. This filter suits to operate in very high frequency (VHF) applications. The pole-frequency of the proposed filter can be controlled over five decade frequency range through bias currents. The pole-Q can be independently controlled with the pole-frequency. Non-ideal effects on the filter are studied in detail. A validated BJT model is used in the simulations operated by a single power supply, as low as 2.5 V. The simulation results using PSpice are included to confirm the good performances and are in agreement with the theory

A Differential 4-Path Highly Linear Widely Tunable On-Chip Band-Pass Filter

A passive switched capacitor RF band-pass filter with clock controlled center frequency is realized in 65nm CMOS. An off-chip transformer which acts as a balun, improves filter-Q and realizes impedance matching. The differential architecture reduces clock-leakage and suppresses selectivity around even harmonics of the clock. The filter has a constant -3dB bandwidth of 35MHz and can be tuned from 100MHz up to 1GHz. IIP3 is better than 19dBm, P1dB=2dBm and NF<;5.5dB at Pdiss=2mW to 16mW.\u

Communication Subsystems for Emerging Wireless Technologies

The paper describes a multi-disciplinary design of modern communication systems. The design starts with the analysis of a system in order to define requirements on its individual components. The design exploits proper models of communication channels to adapt the systems to expected transmission conditions. Input filtering of signals both in the frequency domain and in the spatial domain is ensured by a properly designed antenna. Further signal processing (amplification and further filtering) is done by electronics circuits. Finally, signal processing techniques are applied to yield information about current properties of frequency spectrum and to distribute the transmission over free subcarrier channels

0.5V 3rd-order Tunable gm-C Filter

This paper proposes a 3rd-order gm-C filter that operates with the extremely low voltage supply of 0.5V. The employed transconductor is capable for operating in an extremely low voltage power supply environment. A benefit offered by the employed transconductor is that the filter’s cut-off frequency can be tuned, through a dc control current, for relatively large ranges. The filter structure was designed using normal threshold transistors of a triple-well 0.13μm CMOS process and is operated under a 0.5V supply voltage; its behavior has been evaluated through simulation results by utilizing the Analog Design Environment of the Cadence software

A Comparative Study Between a Micromechanical Cantilever Resonator and MEMS-based Passives for Band-pass Filtering Application

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver components. This is due to some excellent properties of the MEMS devices like low loss, excellent isolation etc. in the microwave frequency domain where the on-chip passives normally tend to become leakier and degrades the transceiver performance. This paper presents a comparative analysis between MEMS-resonator based and MEMS-passives based band-pass filter configurations for RF applications, along with their design, simulation, fabrication and characterization. The filters were designed to have a center frequency of 455 kHz, meant for use as the intermediate frequency (IF) filter in superheterodyne receivers. The filter structures have been fabricated in PolyMUMPs process, a three-polysilicon layer surface micromachining process.Comment: 6 pages, 15 figure

Log-domain All-pass Filter-based Multiphase Sinusoidal Oscillators

Log-domain current-mode multiphase sinusoidal oscillators based on all-pass filters are presented in this paper. The first-order differential equation is used for obtaining inverting and non-inverting all-pass filters. The proposed oscillators are realized by all-pass filters which can be electronically tuned their natural frequency and stage gain by adjusting the bias currents. Each all pass filter contains 10 NPN transistors and a grounded capacitor. The validated BJT model which used in SPICE simulation operated by a single power supply as low as 2.5 V. The frequency of oscillation can be controlled over four decades. The total harmonic distortions of these MSO at frequency 56.67 MHz and 54.44 MHz, obtained around 0.52% and 0.75%, respectively. The proposed circuits enable fully integrated in telecommunication systems and also suit to high-frequency applications. Nonideality studies and PSpice simulation results are included to confirm the theory

Biquadratic Filter Applications Using a Fully-Differential Active-Only Integrator

A new class of active filters, real active-only filters is described and possible implementation issues of these filters are discussed. To remedy these issues, a fully-differential active-only integrator block built around current controlled current conveyors is presented. The integration frequency of the proposed circuit is adjustable over a wide frequency range. As an application, a real active-only filter based on the classical two-integrator loop topology is presented and designed. The feasibility of this filter in a 0.35µm CMOS process is verified through SPECTRE simulation program in the CADENCE design tool