1,554 research outputs found

    Performance Analysis of MEMS Based Oscillator for High Frequency Wireless Communication Systems

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    The frequency oscillator is a basic component found in many electrical, electronic, and communications circuits and systems. Oscillators come in a variety of shapes and sizes, depending on the frequency range employed in a given application. Some applications need oscillators that generate low frequencies and other applications need oscillators that generate extremely high and high frequencies. As a result of the expansion and speed of modern technologies, new oscillators appeared that operating at extremely high frequencies. Most wireless communication systems are constrained in their performance by the accuracy and stability of the reference frequency. Because of its compatibility with silicon, micro-electro-mechanical system (MEMS) is the preferred technology for circuit integration and power reduction. MEMS are a rapidly evolving area of advanced microelectronics. The integration of electrical and mechanical components at the micro size is referred to as a MEMS. MEMS based oscillators have demonstrated tremendous high frequency application potential in recent years. This is owing to their great characteristics such as small size, integration of CMOS IC technology, high frequency-quality factor product, low power consumption, and cheap batch manufacturing cost. This paper's primary objective is to describe the performance of MEMS oscillator technology in high-frequency applications, as well as to discuss the challenges of developing a new MEMS oscillator capable of operating at gigahertz frequencies

    An unreleased mm-wave resonant body transistor

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    In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO[subscript 2] is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ~4× lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.Microelectronics Advanced Research Corporation (MARCO)United States. Defense Advanced Research Projects Agenc

    Acoustic Bragg Reflectors for Q-Enhancement of Unreleased MEMS Resonators

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    This work presents the design of acoustic Bragg reflectors (ABRs) for unreleased MEMS resonators through analysis and simulation. Two of the greatest challenges to the successful implementation of MEMS are those of packaging and integration with integrated circuits. Development of unreleased RF MEMS resonators at the transistor level of the CMOS stack will enable direct integration into front-end-of-line (FEOL) processing, making these devices an attractive choice for on-chip signal generation and signal processing. The use of ABRs in unreleased resonators reduces spurious modes while maintaining high quality factors. Analysis on unreleased resonators using ABRs covers design principles, effects of fabrication variation, and comparison to released devices. Additionally, ABR-based unreleased resonators are compared with unreleased resonators enhanced using phononic crystals, showing order of magnitude higher quality factor (Q) for the ABR-based devices.United States. Defense Advanced Research Projects Agency (DARPA Young Faculty Award)Semiconductor Research Corporation (Center for Materials, Structures and Devices (MSD)

    RF-MEMS Switches Designed for High-Performance Uniplanar Microwave and mm-Wave Circuits

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    Radio frequency microelectromechanical system (RF-MEMS) switches have demonstrated superior electrical performance (lower loss and higher isolation) compared to semiconductor-based devices to implement reconfigurable microwave and millimeter (mm)-wave circuits. In this chapter, electrostatically actuated RF-MEMS switch configurations that can be easily integrated in uniplanar circuits are presented. The design procedure and fabrication process of RF-MEMS switch topologies able to control the propagating modes of multimodal uniplanar structures (those based on a combination of coplanar waveguide (CPW), coplanar stripline (CPS), and slotline) will be described in detail. Generalized electrical (multimodal) and mechanical models will be presented and applied to the switch design and simulation. The switch-simulated results are compared to measurements, confirming the expected performances. Using an integrated RF-MEMS surface micromachining process, high-performance multimodal reconfigurable circuits, such as phase switches and filters, are developed with the proposed switch configurations. The design and optimization of these circuits are discussed and the simulated results compared to measurements
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