Design and Implementation of A 6-GHz Array of Four Differential VCOs Coupled Through a Resistive Network

International audienceThis paper presents the design and the implementation of a fully monolithic coupled-oscillator array, operating at 6 GHz with close to zero coupling phase, in 0.25 μm BICMOS SiGe process. This array is made of four LC-NMOS differential VCOs coupled through a resistor. The single LC-NMOS VCO structure is designed and optimized in terms of phase noise with a graphical optimization approach while satisfying design constraints. At 2.5 V power supply voltage, and a power dissipation of only 125 mW, the coupled oscillators array features a simulated phase noise of -127.3 dBc/Hz at 1 MHz frequency offset from a 6 GHz carrier, giving a simulated phase progression that was continuously variable over the range -64° < Δphi <64 ° and -116° < Δphi < 116°. This constant phase progression can be established by slightly detuning the peripheral array elements, while maintaining mutual synchronization

Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems

In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78 GHz, 3.22-3.53 GHz, 3.48-3.91 GHz and 4.528-5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and -6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as -37.21 and -47.6 dBm, respectively. The phase noise between -110.45 and -122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between -176.48 and -181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between -6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4-6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm(2) on Si substrate, including DC, digital and RF pads

8-Phase Ring oscillator for modern receivers

The evolution of receiver architectures, built in modern CMOS technologies, allows the design of high efficient receivers. A key block in modern receivers is the oscillator. The main objective of this thesis is to design a very low power and low area 8-Phase Ring Oscillator for biomedical applications (ISM and WMTS bands). Oscillators with multiphase outputs and variable duty cycles are required. In this thesis we are focused in 12.5% and 50% duty-cycles approaches. The proposed circuit uses eight inverters in a ring structure, in order to generate the output duty cycle of 50%. The duty cycle of 1/8 is achieved through the combination of the longer duty cycle signals in pairs, using, for this purpose, NAND gates. Since the general application are not only the wireless communications context, as well as industrial, scientific and medical plans, the 8-Phase Oscillator is simulated to be wideband between 100 MHz and 1 GHz, and be able to operate in the ISM bands (447 MHz-930 MHz) and WMTS (600 MHz). The circuit prototype is designed in UMC 130 nm CMOS technology. The maximum value of current drawn from a DC power source of 1.2 V, at a maximum frequency of 930 MHz achieved, is 17.54 mA. After completion of the oscillator layout studied (occupied area is 165 μm x 83 μm). Measurement results confirm the expected operating range from the simulations, and therefore, that the oscillator fulfil effectively the goals initially proposed in order to be used as Local Oscillator in RF Modern Receivers

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam

Low Power Adaptive Circuits: An Adaptive Log Domain Filter and A Low Power Temperature Insensitive Oscillator Applied in Smart Dust Radio

This dissertation focuses on exploring two low power adaptive circuits. One is an adaptive filter at audio frequency for system identification. The other is a temperature insensitive oscillator for low power radio frequency communication. The adaptive filter is presented with integrated learning rules for model reference estimation. The system is a first order low pass filter with two parameters: gain and cut-off frequency. It is implemented using multiple input floating gate transistors to realize online learning of system parameters. Adaptive dynamical system theory is used to derive robust control laws in a system identification task. Simulation results show that convergence is slower using simplified control laws but still occurs within milliseconds. Experimental results confirm that the estimated gain and cut-off frequency track the corresponding parameters of the reference filter. During operation, deterministic errors are introduced by mismatch within the analog circuit implementation. An analysis is presented which attributes the errors to current mirror mismatch. The harmonic distortion of the filter operating in different inversion is analyzed using EKV model numerically. The temperature insensitive oscillator is designed for a low power wireless network. The system is based on a current starved ring oscillator implemented using CMOS transistors instead of LC tank for less chip area and power consumption. The frequency variance with temperature is compensated by the temperature adaptive circuits. Experimental results show that the frequency stability from 5°C to 65°C has been improved 10 times with automatic compensation and at least 1 order less power is consumed than published competitors. This oscillator is applied in a 2.2GHz OOK transmitter and a 2.2GHz phase locked loop based FM receiver. With the increasing needs of compact antenna, possible high data rate and wide unused frequency range of short distance communication, a higher frequency phase locked loop used for BFSK receiver is explored using an LC oscillator for its capability at 20GHz. The success of frequency demodulation is demonstrated in the simulation results that the PLL can lock in 0.5&mu;s with 35MHz lock-in range and 2MHz detection resolution. The model of a phase locked loop used for BFSK receiver is analyzed using Matlab

Design Of A 2.4 Ghz Low Power Lc Vco In Umc 0.18u Technology

Tez (Yüksek Lisans) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2007Thesis (M.Sc.) -- İstanbul Technical University, Institute of Science and Technology, 2007Bu çalışmada, Bluetooth uygulamalarında kullanılmak üzere 2.45GHz merkez frekansında çalışan, frekans ayarlaması 2.2GHz ile 2.7GHz arasında değişen, düşük güç (2mW) tüketimi sağlayan bir LC GKO (VCO) tasarlanmıştır. Faz gürültüsünü minimize etmek maksadıyla 4 bit anahtarlamalı IMOS dizisinden yararlanılmıştır. Ayrıca frekansın ince ayarı için kapasite kuplajlı diyot varaktör devresi eklenmiştir. Bu frekans ayarlama tekniğinin faz gürültüsüne etkisi en kötü hal için 50kHz ofsette yaklaşık olarak 2dBc/Hz olup yüksek ofsetlerde yok denecek kadar azdır. Devrenin kaba kontrol gerilimleri 1.4V ve 0V olup, ince ayar gerilimi ise 0.5V ile 1.4V arasındadır. Besleme geriliminin 1.4V olduğu dikkate alındığında devre yüksek entegrasyon olanağı sunmaktadır. Faz gürültüsü 50kHz ofsette -88.6dBc/Hz ile -94.36dBc/Hz arasında olup 3MHz ofsette ise -128.3dBc/Hz ile -130.5dBc/Hz değerlerine ulaşmaktadır.Bu devreye ek olarak daha düşük gerilimli farklı topolojiler aynı akım akıtacak şekilde tasarlanmış ve tezin aynı zamanda ISM bandında çalışan düşük güç sarfiyatı isteyen uygulamalarda gerekli olacak bir GKO ihtiyacı için karşılaştırmalı bir çalışma olması sağlanmıştır.In this study, a low power LC VCO which operates at a center frequency of 2.45GHz over the range between 2.2GHz and 2.7GHz is designed for Bluetooth applications. The oscillator consumes 2mW at a supply voltage of 1.4V. To minimize the phase noise generated by the varactor through AM-PM conversion, 4bits SCA varactor is implemented by employing IMOS varactors. For fine tuning of frequency, a capacitor coupled diode varactor structure is designed. The effect of this overall varactor structure on the phase noise is around 2dBc/Hz at 50kHz offset for the worst case whereas it is negligble at high offsets. The coarse control tuning voltage values are 0V and 1.4V and the fine tuning control voltage varies from 0.5V to 1.4V. Hence, a high integration is achieved by keeping the external voltage at power supply voltage. The phase noise is between -88.6dBc/Hz and -94.36dBc/Hz at 50kHz offset, and between -128.3dBc/Hz and -130.5dBc/Hz at 3MHz offset. In addition to this, several circuits enabling lower supply voltage are simulated by keeping the same current in order to constitute a comparative study for low power applications which do not require stringent phase noise specification at 2.4GHz.Yüksek LisansM.Sc

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications