Ion-exchange in Glasses and Crystals: from Theory to Applications

Since its first observation in 1850, ion-exchange (IEx) has become a fundamental process in many applications involving water treatment, catalysis, chromatography, and the food and pharmaceutical industries. Starting from the early 1900s, another relevant application of IEx has been in the glass industry, with the surface tempering of glass produced by a K+–Na+ ion exchange. Nowadays, photonics has greatly exploited IEx technology: graded-index microlenses, graded-index fibers and integrated optical waveguides and devices are examples of achievements made possible by the IEx process. Moreover, ion-exchange is possible in ferroelectric crystals, too, and has been fundamental for the development of many linear and nonlinear integrated optical devices in lithium niobate and tantalate.This volume collects articles published in the corresponding Special Issue of the Applied Sciences journal. Four review articles, written by internationally renowned experts in this field, provide complementary overviews of the history, fundamental aspects, designs and fabrications of devices, and technological achievements. Three articles describe original research in the fields of diffraction grating, photo-thermo-refractive glasses, and Yb-doped lithium niobate. This volume constitutes a valuable and updated reference for all students and researchers wishing to improve their knowledge and/or make use of ion-exchange technology and its applications

Modal and Polarization Qubits in Ti:LiNbO3_3 Photonic Circuits for a Universal Quantum Logic Gate

Lithium niobate photonic circuits have the salutary property of permitting the generation, transmission, and processing of photons to be accommodated on a single chip. Compact photonic circuits such as these, with multiple components integrated on a single chip, are crucial for efficiently implementing quantum information processing schemes. We present a set of basic transformations that are useful for manipulating modal qubits in Ti:LiNbO$_3$ photonic quantum circuits. These include the mode analyzer, a device that separates the even and odd components of a state into two separate spatial paths; the mode rotator, which rotates the state by an angle in mode space; and modal Pauli spin operators that effect related operations. We also describe the design of a deterministic, two-qubit, single-photon, CNOT gate, a key element in certain sets of universal quantum logic gates. It is implemented as a Ti:LiNbO$_3$ photonic quantum circuit in which the polarization and mode number of a single photon serve as the control and target qubits, respectively. It is shown that the effects of dispersion in the CNOT circuit can be mitigated by augmenting it with an additional path. The performance of all of these components are confirmed by numerical simulations. The implementation of these transformations relies on selective and controllable power coupling among single- and two-mode waveguides, as well as the polarization sensitivity of the Pockels coefficients in LiNbO$_3$

High Efficiency Silicon Photonic Interconnects

Silicon photonic has provided an opportunity to enhance future processor speed by replacing copper interconnects with an on chip optical network. Although photonics are supposed to be efficient in terms of power consumption, speed, and bandwidth, the existing silicon photonic technologies involve problems limiting their efficiency. Examples of limitations to efficiency are transmission loss, coupling loss, modulation speed limited by electro-optical effect, large amount of energy required for thermal control of devices, and the bandwidth limit of existing optical routers. The objective of this dissertation is to investigate novel materials and methods to enhance the efficiency of silicon photonic devices. The first part of this dissertation covers the background, theory and design of on chip optical interconnects, specifically silicon photonic interconnects. The second part describes the work done to build a 300mm silicon photonic library, including its process flow, comprised of basic elements like electro-optical modulators, germanium detectors, Wavelength Division Multiplexing (WDM) interconnects, and a high efficiency grating coupler. The third part shows the works done to increase the efficiency of silicon photonic modulators, unitizing the χ(3) nonlinear effect of silicon nanocrystals to make DC Kerr effect electro-optical modulator, combining silicon with lithium niobate to make χ(2) electro-optical modulators on silicon, and increasing the efficiency of thermal control by incorporating micro-oven structures in electro-optical modulators. The fourth part introduces work done on dynamic optical interconnects including a broadband optical router, single photon level adiabatic wavelength conversion, and optical signal delay. The final part summarizes the work and talks about future development

Wafer-level processing of ultralow-loss Si3N4

Photonic integrated circuits (PICs) are devices fabricated on a planar wafer that allow light generation, processing, and detection. Photonic integration brings important advantages for scaling up the complexity and functionality of photonic systems and facilitates their mass deployment in areas where large volumes and compact solutions are needed, e.g., optical interconnects. Among the material platforms available, silicon nitride (Si3N4) displays excellent optical properties such as broadband transparency, moderately high refractive index, and relatively strong nonlinearities. Indeed, Si3N4 integrated waveguides display ultralow-loss (few decibels per meter), which enables efficient light processing and nonlinear optics. Moreover, Si3N4 is compatible with standard complementary metal oxide semiconductor (CMOS) processing techniques,which facilitates the manufacture scalability required by mass deployment of PICs. However, the selection of a single photonic platform sets limitations to the device functionalities due to the intrinsic properties of the material and the fundamental limitation of optical waveguiding. Multilayer integration of different platforms can overcome the limitations encountered in a singleplatform PIC.This thesis presents the development of advanced techniques for the waferlevel manufacturing of ultralow-loss Si3N4 devices and approaches to enable their interface with active components like modulators and chip-scale comb sources (microcombs). The investigation covers the tailoring of a waveguide to the functionality required, the wafer-scale manufacturing of Si3N4, and how to overcome the limitations of a single platform on a wafer. These studies enable high-yield fabrication of microcombs, the integration of two Si3N4 platforms on the same wafer, and a strategy to efficiently couple to an integrated LiNbO3 layer to expand the chip functionality and scale up the complexity of the PIC

On-chip generation and dynamic piezo-optomechanical rotation of single photons

Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors

Single-photon detection and cryogenic reconfigurability in Lithium Niobate nanophotonic circuits

Lithium-Niobate-On-Insulator (LNOI) is emerging as a promising platform for integrated quantum photonic technologies because of its high second-order nonlinearity and compact waveguide footprint. Importantly, LNOI allows for creating electro-optically reconfigurable circuits, which can be efficiently operated at cryogenic temperature. Their integration with superconducting nanowire single-photon detectors (SNSPDs) paves the way for realizing scalable photonic devices for active manipulation and detection of quantum states of light. Here we report the first demonstration of these two key components integrated in a low loss (0.2 dB/cm) LNOI waveguide network. As an experimental showcase of our technology, we demonstrate the combined operation of an electrically tunable Mach-Zehnder interferometer and two waveguide-integrated SNSPDs at its outputs. We show static reconfigurability of our system with a bias-drift-free operation over a time of 12 hours, as well as high-speed modulation at a frequency up to 1 GHz. Our results provide blueprints for implementing complex quantum photonic devices on the LNOI platform

INTEGRATED QUANTUM PHOTONIC CIRCUITS WITH QUANTUM DOTS

Scalable quantum photonics require efficient single-photon emitters as well as low-loss reconfigurable photonic platforms that connect and manipulate these single photons. Quantum dots are excellent sources of on-demand single photons and can act as stable quantum memories. Therefore, integration of quantum dots with photonic platforms is crucial for many applications in quantum information processing. In this thesis, we first describe hybrid integration of InAs quantum dots hosted in InP to silicon photonic waveguides. We demonstrate an efficient transition of quantum emission to silicon. Quantum nature of the emission is confirmed through photon correlation measurements. Secondly, we present a micro-disk resonator device based on silicon photonics that enables on-chip filtering and routing of single photons generated by quantum dots. The tunability of silicon photonics decreases at low temperatures due to “carrier freeze-out”. Because of a strong electro-optic effect in lithium niobate, this material is the ideal platform for reconfigurable photonics, even at cryogenic temperatures. To this end, we demonstrate integration of quantum dots with thin-film lithium niobate photonics promising for active switching and modulating of single photons. More complex quantum photonic devices require multiple identical single-photon emitters on the chip. However, the transition wavelength of quantum dots varies because of the slightly different shape and size of each dot. To address this hurdle, we propose and characterize a quantum dot device located in an electrostatic field. The resonance wavelength of the quantum dot emission is tuned up to 8 nm, more than one order of magnitude greater than the transition linewidth, opening the possibility of tuning multiple quantum dots in resonance with each other. Finally, we discuss the application of a single quantum dot strongly coupled to a nanophotonic cavity as an efficient medium for non-linear phenomenon of optical amplification. Presence of a strong pump laser inverses the population of the quantum dot and leads to stimulated emission from the cavity-coupled quantum dot. Using this platform, we observe an optical gain of ~ 16%, significantly increased compared to previous demonstrations of gain in single solid-state quantum emitters without cavities or weakly coupled to cavities. These demonstrations are significant steps toward robust control of single photons using linear and non-linear photonic platforms