Micro systems technology

The emerging field of Micro Systems Technology is described. Micro Systems Technology can be seen as the meeting of disciplines, a product of convergence along different lines. Apart from the traditional and ever developing line of 'classical' precision engineering, there is a line along micro electronics, micro sensors and actuators. This is the line we focus on in this contribution. The third line worth mentioning is the one along the upcoming field of molecular engineering. The main purpose of this paper is to show the wealth of possibilities and consequently the need for 'integral design' management

Performance Improvisation of Cantilever-type Silicon Micro AccelerationSensors Using Stress Concentration Regions Technique

Acceleration sensors find applications in missile and competent munitions subsystems.Cantilever-type sensor's sensitivity and bandwidth are dependant on material properties of  thecantilever and structure of proof mass. It is always desired to design a sensor as sensitive aspossible but also maintaining higher bandwidth. In piezoresistive (cantilever-type) accelerometers,various techniques were employed by designers to enhance their sensitivity and bandwidth.Most of these techniques are usually focused on shape and size of either cantilever or proofmass. This paper presents a concept of creating stress concentration regions (SCRs) on thecantilever for enhancing its sensitivity. Five types of structures were simulated to study thebehaviour of piezoresistive sensors with SCRs implementation. Use of SCRs results in substantialincrease in the sensitivity, which is of the order of 1.85 times the nominal sensitivity. It was aimedat maximising sensor's performance factor, which is the product of sensor bandwidth andsensitivity. This study gives new dimension to the ways of improving performance of cantilever-type inertial piezoresistive sensor

CMOS systems and circuits for sub-degree per hour MEMS gyroscopes

The objective of our research is to develop system architectures and CMOS circuits that interface with high-Q silicon microgyroscopes to implement navigation-grade angular rate sensors. The MEMS sensor used in this work is an in-plane bulk-micromachined mode-matched tuning fork gyroscope (M² – TFG ), fabricated on silicon-on-insulator substrate. The use of CMOS transimpedance amplifiers (TIA) as front-ends in high-Q MEMS resonant sensors is explored. A T-network TIA is proposed as the front-end for resonant capacitive detection. The T-TIA provides on-chip transimpedance gains of 25MΩ, has a measured capacitive resolution of 0.02aF /√Hz at 15kHz, a dynamic range of 104dB in a bandwidth of 10Hz and consumes 400μW of power. A second contribution is the development of an automated scheme to adaptively bias the mechanical structure, such that the sensor is operated in the mode-matched condition. Mode-matching leverages the inherently high quality factors of the microgyroscope, resulting in significant improvement in the Brownian noise floor, electronic noise, sensitivity and bias drift of the microsensor. We developed a novel architecture that utilizes the often ignored residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching (i.e.0Hz split between the drive and sense mode frequencies), as well as electronically control the sensor bandwidth. A CMOS implementation is developed that allows mode-matching of the drive and sense frequencies of a gyroscope at a fraction of the time taken by current state of-the-art techniques. Further, this mode-matching technique allows for maintaining a controlled separation between the drive and sense resonant frequencies, providing a means of increasing sensor bandwidth and dynamic range. The mode-matching CMOS IC, implemented in a 0.5μm 2P3M process, and control algorithm have been interfaced with a 60μm thick M2−TFG to implement an angular rate sensor with bias drift as low as 0.1°/hr ℃ the lowest recorded to date for a silicon MEMS gyro.Ph.D.Committee Chair: Farrokh Ayazi; Committee Member: Jennifer Michaels; Committee Member: Levent Degertekin; Committee Member: Paul Hasler; Committee Member: W. Marshall Leac

Silicon Photonic Devices and Their Applications

Silicon photonics is the study and application of photonic systems, which use silicon as an optical medium. Data is transferred in the systems by optical rays. This technology is seen as the substitutions of electric computer chips in the future and the means to keep tack on the Moore’s law. Cavity optomechanics is a rising field of silicon photonics. It focuses on the interaction between light and mechanical objects. Although it is currently at its early stage of growth, this field has attracted rising attention. Here, we present highly sensitive optical detection of acceleration using an optomechanical accelerometer. The core part of this accelerometer is a slot-type photonic crystal cavity with strong optomechanical interactions. We first discuss theoretically the optomechanical coupling in the air-slot mode-gap photonic crystal cavity. The dispersive coupling gom is numerically calculated. Dynamical parametric oscillations for both cooling and amplification, in the resolved and unresolved sideband limit, are examined numerically, along with the displacement spectral density and cooling rates for the various operating parameters. Experimental results also demonstrated that the cavity has a large optomechanical coupling rate. The optically induced spring effect, damping and amplification of the mechanical modes are observed with measurements both in air and in vacuum. Then, we propose and demonstrate our optomechanical accelerometer. It can operate with a resolution of 730 ng/Hz¹/² (or equivalently 40.1 aN/Hz¹/²) and with a transduction bandwidth of ≈ 85 kHz. We also demonstrate an integrated photonics device, an on-chip spectroscopy, in the last part of this thesis. This new type of on-chip microspectrometer is based on the Vernier effect of two cascaded micro-ring cavities. It can measure optical spectrum with a bandwidth of 74nm and a resolution of 0.22 nm in a small footprint of 1.5 mm²

A high-resolution micro-electro-mechanical resonant tilt sensor

This paper reports on the design and experimental evaluation of a high-resolution Micro-Electro-Mechanical (MEM) tilt sensor based on resonant sensing principles. The sensors incorporate a pair of double-ended tuning fork (DETF) resonant strain gauges, the mechanical resonant frequencies of which shift in proportion to an axial force induced by variations in the component of gravitational acceleration along a specified input axis. An analysis of the structural design of such sensors (using analytical and finite element modelling) is presented, followed by experimental test results from device prototypes fabricated using a silicon-on-insulator (SOI) MEMS technology. This paper reports measurement conducted to quantify sensor scale factor, temperature sensitivity, scale factor linearity and resolution. It is demonstrated that such sensors provide a ±90 degree dynamic range for tilt measurements with a temperature sensitivity of nearly 500 ppb/K (equating to systematic sensitivity error of approximately 0.007 degree/K). When configured as a tilt sensor, it is also shown that the scale factor linearity is better than 1.4% for a ±20° tilt angle range. The bias stability of a micro-fabricated prototype is below 500 ng for an averaging time of 0.8 seconds making these devices a potentially attractive option for numerous precision tilt sensing applications.This is the author's accepted manuscript. The final version is available from Elsevier at http://www.sciencedirect.com/science/article/pii/S0924424714004385

Tuning of 2D rod-type photonic crystal cavity for optical modulation and impact sensing

We propose a novel way of mechanical perturbation of photonic crystal cavities for on-chip applications. We utilize the equivalence of the 2D photonic crystals with perfect electric conductor (PEC) boundary conditions to the infinite height 3D counterparts for rod type photonic crystals. Designed structures are sandwiched with PEC boundaries above and below and the perturbation of the cavity structures is demonstrated by changing the height of PEC boundary. Once a defect filled with air is introduced, the metallic boundary conditions is disturbed and the effective mode permittivity changes leading to a tuned optical properties of the structures. Devices utilizing this perturbation are designed for telecom wavelengths and PEC boundaries are replaced by gold plates during implementation. For 10 nm gold plate displacement, two different cavity structures showed a 21.5 nm and 26 nm shift in the resonant wavelength. Optical modulation with a 1.3 MHz maximum modulation frequency with a maximum power consumption of 36.81 nW and impact sensing with 20 μs response time (much faster compared to the commercially available ones) are shown to be possible

Silicon microaccelerometer fabrication technologies

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.Includes bibliographical references (leaves 275-282).by Charles Heng-Yuan Hsu.Ph.D